Hi-semicon‘s 10A/700V N-Channel Enhancement Mode Power MOSFET SFX10N70-Y for PFC, SMPS,UPS and LED Lighting Power
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These N-Channel enhancement mode power field effect transistors SFX10N70-Y are produced using HI-SEMICON's proprietary, planar stripe, DMOS technology.
These N-Channel enhancement mode power MOSFET SFX10N70-Y are well suited for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
Features
VDS(V)=700V, ID=10A
RDS(ON)
TYP:1.03Ω@VGS=10V ID=5.0A
MAX:1.15Ω
Applications
Power faction correction (PFC)
Switched mode power supplies (SMPS)
Uninterruptible power supply (UPS)
LED lighting power
ABSOLUTE MAXIMUM RATINGS (TJ=25℃unless otherwise noted)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
1.Pulse width limited by maximum junction temperature
2.L=30mH, IAS=3.3A, VDD=100V, VG=10V, RG=25Ω, starting TJ=25℃
3.Pulse Test: Pulse width≤300μs, Duty cycle≤2%
4. Essentially independent of operating temperature
ORDERING INFORMATION
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本文由Vicky转载自HI-SEMICON,原文标题为:SFX10N70-Y 10A, 700V N-CHANNEL POWER MOSFET,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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HI-SEMICON高压功率MOSFET选型表
HI-SEMICON提供高压功率MOSFET以下参数选型,VDS[max] (V):55~1500V,ID[max](25℃) (A):1~110A
产品型号
|
品类
|
Package
|
Channel
|
VDS[max] (V)
|
VGS(V)
|
ID[max](25℃) (A)
|
PD[25℃] (W)
|
VGS(th)[min] (V)
|
VGS(th)[max] (V)
|
RDS(on)[typ] (@10V) (Ω)
|
Ciss(typ)(pF)
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QG[typ](nC)
|
SFF7N65-Y
|
高压功率MOSFETs
|
TO-220F-3L
|
N
|
650
|
±20
|
50
|
62
|
2.0
|
4.0
|
15.4
|
1530
|
41.7
|
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电子商城
品牌:丽正国际
品类:N-Channel Enhancement Mode Power MOSFET
价格:¥0.1576
现货: 5,000
品牌:丽正国际
品类:N-Channel Enhancement Mode Power MOSFET
价格:¥0.1576
现货: 5,000
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