50A/65V N-Channel MOSFETs VM6505 Uses Trench DMOS Technology and has Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM6505 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These N-Channel MOSFETs are well suited for high efficiency fast switching applications.
Features
65V,50A, RDS(ON)=9mΩ@VGS=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
Networking
Load Switch
LED applications
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Thermal Characteristics
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Note :
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=38A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed, pulse width ≦ 300μs, duty cycle ≦ 2%.
4. Essentially independent of operating temperature.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由Vicky转载自Viva，原文标题为:VM6505 65V N-Channel MOSFETs，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
相关推荐
65V/95A N-Channel MOSFETs VM6502, Improved dv/dt Capability, Suitable for Networking and Load Switch
These N-Channel enhancement mode power field effect transistors VM6502 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
产品 发布时间 : 2023-12-06
100V/16A N-Channel MOSFETs VM9001 Are Well Suited for High Efficiency Fast Switching Applications
These N-Channel enhancement mode power field effect transistors VM9001 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
产品 发布时间 : 2024-03-08
100V/55A N-Channel MOSFETs VM9002, Using Trench DMOS Technology to Minimize On-state Resistance and Provide Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM9002 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
产品 发布时间 : 2023-12-06
220V/65A N-Channel Enhancement Mode Power MOSFETs VM2002 is Suit for 1.8V Gate Drive Applications
These N-Channel enhancement mode power field effect transistors VM2002 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
产品 发布时间 : 2023-11-12
30V N-Channel MOSFETs VM3008 Using Trench DMOS Technology to Minimize On-state Resistance and Provide Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM3008 using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high-energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
产品 发布时间 : 2024-02-07
65V/120A N-Channel Enhancement Mode Power MOSFETs VM6503 with Improved dv/dt Capability and Fast Switching Performance
These N-Channel enhancement mode power field effect transistors VM6503 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
产品 发布时间 : 2024-03-09
80V/75A N-Channel MOSFETs VM8002 Using Trench DMOS Technology to Minimize On-state Resistance
These N-Channel enhancement mode power field effect transistors VM8002 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
产品 发布时间 : 2024-01-05
65V/46A N-Channel Enhancement Mode Power MOSFETs VM6506, Use Trench DMOS Technology to Minimize On-State Resistance and Provide Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM6506 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
产品 发布时间 : 2024-03-06
电子商城
授权代理品牌：集成电路
授权代理品牌：分立元件
授权代理品牌：接插件及结构件
授权代理品牌：部件、组件及配件
授权代理品牌：电源及模块
授权代理品牌：电子材料
授权代理品牌：仪器仪表及测试配组件
授权代理品牌：电工工具及材料
授权代理品牌：机械电子元件
授权代理品牌：加工与定制
我要提问
登录 | 立即注册
提交评论