50A/65V N-Channel MOSFETs VM6505 Uses Trench DMOS Technology and has Superior Switching Performance

时间： 2023-11-10 来源：Viva

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These N-Channel enhancement mode power field effect transistors VM6505 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These N-Channel MOSFETs are well suited for high efficiency fast switching applications.

Features

65V,50A, R_DS(ON)=9mΩ@V_GS=10V
Improved dv/dt capability
Fast switching
100% E_AS Guaranteed
Green Device Available

Applications
Networking
Load Switch
LED applications

Absolute Maximum Ratings (T_c=25℃ unless otherwise noted)

Thermal Characteristics

Electrical Characteristics (T_J=25℃, unless otherwise noted)

Note :
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. V_DD=25V,V_GS=10V,L=0.1mH,I_AS=38A,R_G=25Ω,Starting T_J=25℃.
3. The data tested by pulsed, pulse width ≦ 300μs, duty cycle ≦ 2%.
4. Essentially independent of operating temperature.

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