220V/65A N-Channel Enhancement Mode Power MOSFETs VM2002 is Suit for 1.8V Gate Drive Applications
These N-Channel enhancement mode power field effect transistors VM2002 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These N-Channel Enhancement Mode Power MOSFETs devices are well suited for high efficiency fast switching applications.
PPAK3X3 Pin Configuration
Features
20V,65A, RDS(ON)=4.9mΩ@VGS=4.5V
Improved dv/dt capability
Green Device Available
Suit for 1.8V Gate Drive Applications
Applications
Load Switch
POL Applications
SMPS 2nd SR
Li-Battery Protection
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Thermal Characteristics
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Note :
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. VDD=15V,VGS=10V,L=0.1mH,IAS=49A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed, pulse width ≦ 300μs, duty cycle ≦ 2%.
4. Essentially independent of operating temperature.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由Vicky转载自Viva,原文标题为:VM2002 20V N-Channel MOSFETs,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
30V N-Channel MOSFETs VM3008 Using Trench DMOS Technology to Minimize On-state Resistance and Provide Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM3008 using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high-energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
65V/120A N-Channel Enhancement Mode Power MOSFETs VM6503 with Improved dv/dt Capability and Fast Switching Performance
These N-Channel enhancement mode power field effect transistors VM6503 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
100V/16A N-Channel MOSFETs VM9001 Are Well Suited for High Efficiency Fast Switching Applications
These N-Channel enhancement mode power field effect transistors VM9001 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
YJS8205A N-Channel Enhancement Mode Field Effect Transistor
描述- 本资料介绍了YJS8205A N沟道增强型场效应晶体管(MOSFET)的产品概要、特性参数和应用领域。该器件采用 trench power LV MOSFET技术,具备高功率和电流处理能力,适用于PWM应用和负载开关。
型号- YJS8205A
VM8001 80V N沟道MOSFET
描述- VM8001是一款采用沟槽DMOS技术的N沟道增强型功率场效应晶体管,适用于80V N-Channel MOSFETs。该产品具有低导通电阻、优异的开关性能和承受高能脉冲的能力,适用于高效率快速开关应用。
型号- VM8001
YJL2302B N沟道增强型场效应晶体管
描述- 本资料介绍了YJL2302B型N沟道增强型场效应晶体管(MOSFET)的产品特性、电气参数和应用领域。该器件采用 trench power lv mosfet技术,具有高功率和电流处理能力,适用于PWM应用和负载开关。
型号- YJL2302B
YJL3134KDW N沟道增强型场效应晶体管
描述- 本资料介绍了YJL3134KDW型N沟道增强型场效应晶体管(MOSFET)的产品概要、特性参数和应用领域。该器件采用 trench power LV MOSFET技术,具有高功率和电流处理能力,适用于PWM应用。
型号- YJL3134KDW
VM6503 65V N沟道MOSFET
描述- VM6503是一款采用沟槽DMOS技术的N沟道增强型功率场效应晶体管。该产品具有65V的耐压能力,120A的连续漏极电流,以及3.5mΩ的导通电阻,适用于高效率快速切换应用。产品特性包括低导通电阻、快速开关、良好的dv/dt能力,并提供绿色环保版本。应用领域涵盖网络、负载开关和LED应用。
型号- VM6503
昱盛电子MOSFET选型表
昱盛电子提供以下参数的MOSFET选型, MaxVth:1~4V,Ciss:72.9~6500pF,Coss:18.3~4100pF,Crss:2.2~370pF
产品型号
|
品类
|
V(BR)DSS (V) Min.
|
VGS (±V) Max.
|
Vth (V) Max.
|
RDS(ON) (mΩ) Max.@VGS=10V
|
RDS(ON) (mΩ) Max.@VGS=4.5V
|
Ciss (pF) Typ.
|
Coss (pF) Typ.
|
Crss (pF) Typ.
|
ID (A)@25℃ Max.
|
PD (W)@25℃ Max.
|
VM2001
|
N-Channel MOSFETs
|
-20
|
10
|
1
|
|
8.3
|
3300
|
420
|
370
|
55
|
51
|
选型表 - 昱盛电子 立即选型
S30N14SO8 30V N沟道MOSFET
描述- 该资料介绍了S30N14SO8型号的30V N-Channel MOSFET,采用 trench DMOS技术,具有低导通电阻、高开关性能和耐高压脉冲的特点。适用于高效率快速切换应用,如MB、VGA、Vcore、POL和SMPS 2nd SR等。
型号- S30N14SO8
VM9002 100V N沟道MOSFET
描述- VM9002是一款采用沟槽DMOS技术的N通道增强型功率场效应晶体管。该器件适用于高效率快速切换应用,具有低导通电阻、优异的开关性能和高能脉冲承受能力。
型号- VM9002
S30N06PPB 30V N沟道MOSFET
描述- S30N06PPB是一款30V N-Channel MOSFET,采用沟槽DMOS技术,具有低导通电阻、快速开关性能和耐高压脉冲的特点,适用于高效率快速切换应用。
型号- S30N06PPB
YJJ3400B N沟道增强型场效应晶体管
描述- 本资料介绍了YJJ3400B型N沟道增强型场效应晶体管(MOSFET)的产品概要、特性参数和应用领域。该器件采用 trench power MV MOSFET技术,具有高速度开关、低导通电阻等特点,适用于电池保护、负载切换和电源管理等应用。
型号- YJJ3400B
YJS18N03A N沟道增强型场效应晶体管
描述- 本资料介绍了YJS18N03A型N沟道增强型场效应晶体管(MOSFET)的产品概要、特性参数和应用领域。该器件采用 trench power lv mosfet技术,具有低RDS(ON)、高密度单元设计、高速开关等特点,适用于电池保护、负载切换和电源管理等应用。
型号- YJS18N03A
S30N06PPA 30V N沟道MOSFET
描述- S30N06PPA是一款采用沟槽DMOS技术的30V N-Channel增强型功率场效应晶体管。该产品具有低导通电阻、优异的开关性能和高能脉冲耐受性,适用于高效率快速开关应用。
型号- S30N06PPA
电子商城
现货市场
服务
世强深圳实验室提供Robei EDA软件免费使用服务,与VCS、NC-Verilog、Modelsim等EDA工具无缝衔接,将IC设计高度抽象化,并精简到三个基本元素:模块、引脚、连接线,自动生成代码。点击预约,支持到场/视频直播使用,资深专家全程指导。
实验室地址: 深圳 提交需求>
登录 | 立即注册
提交评论