220V/65A N-Channel Enhancement Mode Power MOSFETs VM2002 is Suit for 1.8V Gate Drive Applications

时间： 2023-11-12 来源：Viva

代理服务

技术支持

采购服务

These N-Channel enhancement mode power field effect transistors VM2002 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These N-Channel Enhancement Mode Power MOSFETs devices are well suited for high efficiency fast switching applications.

PPAK3X3 Pin Configuration

Features

20V,65A, R_DS(ON)=4.9mΩ@V_GS=4.5V
Improved dv/dt capability
Green Device Available
Suit for 1.8V Gate Drive Applications

Applications

Load Switch
POL Applications
SMPS 2^nd SR
Li-Battery Protection

Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)

Thermal Characteristics

Electrical Characteristics (T_J=25℃, unless otherwise noted)

Note :
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. V_DD=15V,V_GS=10V,L=0.1mH,I_AS=49A,R_G=25Ω,Starting T_J=25℃.
3. The data tested by pulsed, pulse width ≦ 300μs, duty cycle ≦ 2%.
4. Essentially independent of operating temperature.

发送到邮箱 |
+1 赞 0
收藏
评论 0
| 转发至：

本文由Vicky转载自Viva，原文标题为:VM2002 20V N-Channel MOSFETs，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

全部评论（0）

暂无评论

30V N-Channel MOSFETs VM3008 Using Trench DMOS Technology to Minimize On-state Resistance and Provide Superior Switching Performance

These N-Channel enhancement mode power field effect transistors VM3008 using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high-energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

2024-02-07 - 产品代理服务技术支持采购服务

65V/120A N-Channel Enhancement Mode Power MOSFETs VM6503 with Improved dv/dt Capability and Fast Switching Performance

These N-Channel enhancement mode power field effect transistors VM6503 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

2024-03-09 - 产品代理服务技术支持采购服务

100V/16A N-Channel MOSFETs VM9001 Are Well Suited for High Efficiency Fast Switching Applications

These N-Channel enhancement mode power field effect transistors VM9001 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

2024-03-08 - 产品代理服务技术支持采购服务

YJS8205A N-Channel Enhancement Mode Field Effect Transistor

描述- 本资料介绍了YJS8205A N沟道增强型场效应晶体管（MOSFET）的产品概要、特性参数和应用领域。该器件采用 trench power LV MOSFET技术，具备高功率和电流处理能力，适用于PWM应用和负载开关。

型号- YJS8205A

27-Feb-19 - 扬杰科技 - 数据手册 - Rev.2.0 代理服务技术支持采购服务查看更多版本

VM8001 80V N沟道MOSFET

描述- VM8001是一款采用沟槽DMOS技术的N沟道增强型功率场效应晶体管，适用于80V N-Channel MOSFETs。该产品具有低导通电阻、优异的开关性能和承受高能脉冲的能力，适用于高效率快速开关应用。

型号- VM8001

2023/10/18 - 昱盛电子 - 数据手册代理服务技术支持采购服务查看更多版本

YJL2302B N沟道增强型场效应晶体管

描述- 本资料介绍了YJL2302B型N沟道增强型场效应晶体管（MOSFET）的产品特性、电气参数和应用领域。该器件采用 trench power lv mosfet技术，具有高功率和电流处理能力，适用于PWM应用和负载开关。

型号- YJL2302B

13-Jul-22 - 扬杰科技 - 数据手册 - Rev.3.2 代理服务技术支持采购服务

YJL3134KDW N沟道增强型场效应晶体管

描述- 本资料介绍了YJL3134KDW型N沟道增强型场效应晶体管（MOSFET）的产品概要、特性参数和应用领域。该器件采用 trench power LV MOSFET技术，具有高功率和电流处理能力，适用于PWM应用。

型号- YJL3134KDW

20-Feb-20 - 扬杰科技 - 数据手册 - Rev.3.0 代理服务技术支持采购服务

VM6503 65V N沟道MOSFET

描述- VM6503是一款采用沟槽DMOS技术的N沟道增强型功率场效应晶体管。该产品具有65V的耐压能力，120A的连续漏极电流，以及3.5mΩ的导通电阻，适用于高效率快速切换应用。产品特性包括低导通电阻、快速开关、良好的dv/dt能力，并提供绿色环保版本。应用领域涵盖网络、负载开关和LED应用。

型号- VM6503

2023/7/7 - 昱盛电子 - 数据手册代理服务技术支持采购服务查看更多版本

昱盛电子MOSFET选型表

昱盛电子提供以下参数的MOSFET选型， MaxVth：1~4V，Ciss：72.9~6500pF，Coss：18.3~4100pF，Crss：2.2~370pF

产品型号	品类	V(BR)DSS (V) Min.	VGS (±V) Max.	Vth (V) Max.	RDS(ON) (mΩ) Max.@VGS=10V	RDS(ON) (mΩ) Max.@VGS=4.5V	Ciss (pF) Typ.	Coss (pF) Typ.	Crss (pF) Typ.	ID (A)@25℃ Max.	PD (W)@25℃ Max.
VM2001	N-Channel MOSFETs	-20	10	1		8.3	3300	420	370	55	51