30V/85A N-channel Enhanced Mode Power MOSFET SW051R03VLT for Synchronous Rectification, Li Battery Protect Board, Motor Drives
SEMIPOWER N-channel enhanced mode power MOSFET SW051R03VLT is produced with the advanced technology of SAMWIN. This technology enables the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge, and especially excellent avalanche characteristics.
Features
High ruggedness
Low RDS(ON):
(Typ 7.3mΩ)@VGS=4.5V
(Typ 4.7mΩ)@VGS=10V
Low Gate Charge (Typ 43nC)
Improved dv/dt Capability
100% Avalanche Tested
Application
Synchronous Rectification
Li Battery Protect Board
Motor Drives
Absolute maximum ratings
Thermal characteristics
Electrical characteristic (TJ=25℃ unless otherwise specified)
Source to drain diode ratings characteristics
Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L =0.5mH, IAS=22A, VDD=25V, RG=25Ω, Starting TJ=25℃
3. ISD≤30A, di/dt=100A/μs, VDD≤BVDSS, Staring TJ=25℃
4. Pulse Test : Pulse Width≤300μs, duty cycle≤2%.
5. Essentially independent of operating temperature.
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本文由Vicky转载自SEMIPOWER，原文标题为:N-channel Enhanced mode TO-252 MOSFET SW051R03VLT，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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