85V/120A N-channel SGT MOSFET AKG85N065P Featured with Low On-state Resistance, Low Switching Loss and Good EAS Performance

时间： 2023-11-14 来源：ALKAISEMI

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This N-channel SGT MOSFET AKG85N065P has been designed to low on-state resistance, and low switching loss with good E_AS performance, especially for DC-DC and Motor driving applications.

Features
• Low R_DS(ON)
• RoHS compliant
• Halogen-free

Applications

• Battery Management System
• Motor Drivers
• DC-DC Converter

Maximum Ratings (T_A=25℃ unless otherwise noted)

Thermal Characteristics

Electrical Characteristics (T_J=25℃ unless otherwise noted)

Notes:
1. The max drain current rating is silicon limited
2. The max drain current rating is package limited
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L=0.5mH, V_DD=48V, I_AS=30A, R_G=50Ω, Starting T_J=25℃
5. Mount on minimum PCB layout

Ordering Information

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本文由Vicky转载自ALKAISEMI，原文标题为:AKG85N065P 85V 6.5mohm N-channel SGT MOSFET DATASHEET，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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瑶芯微（ALKAIDSEMI）功率器件产品选型指南

目录- 公司简介功率器件产品命名规则功率器件产品应用推荐功率器件产品清单

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