VDMOS器件介绍
一、VDMOS定义
VDMOS为垂直导电双扩散金属氧化物场效应晶体管。
VDMOS采用的大规模集成电路的微细工艺，准确的离子注入得到理想的杂质分布，多晶硅双层布线，多单元并联结构，单元密度高达1.8×104个/厘米2。
二、VDMOS工作原理
当VGS<VT时，源漏之间隔着P区，漏结反偏，故无漏极电流。当VGS>VT时,栅下的P型硅表面发生强反型，形成连通源区和漏区的N型沟道，产生漏极电流ID。对于恒定的VDS，VGS越大，则沟道中的可移动电子就越多，沟道电阻就越小，ID就越大。
所以，VDMOS是通过改变VGS来控制沟道的导电性，从而控制漏极电流ID,是一种电压控制型器件。
三、VDMOS的分类
①按载流子分类:
N沟道：导电的载流子为电子。
P沟道：导电的载流子为空穴。
②按转移特性分类：
转移特性曲线是指VDS恒定时的VGS~ID曲线。
增强型：Vgs=0时截止，漏极电流近似为0的器件为增强型。
耗尽型：Vgs=0时导通，漏极电流不等于0的器件是耗尽型。
四、VDMOS的设计结构
①表面结构
②剖面结构
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产品 发布时间 : 2023-10-18
【产品】采用TOLL封装的MOS LR028N10SM10更极限地发挥出芯片的性能优势，导通电阻低至2.35mr
随着TOLL封装的出现，弥补了传统TO系列封装打线数量的限制，更加极限的发挥出大芯片的性能优势，相同芯片对应成品封出成品更低的导通电阻，同时提升了产品电流能力。LR028N10SM10耐压100V,导通电阻Ron2.35mr.。
产品 发布时间 : 2023-09-27
Preferred Power Solution: Wayon VDMOS Offers High Versatility and Durability
In VDMOSFET design, Wayon focuses on optimizing the contradiction between breakdown voltage and on-resistance, enhancing breakdown voltage while maintaining low on-resistance, and reducing Qg and switching losses. For high-reliability applications such as industrial control, Wayon developed a high-quality silicon nitride passivation layer process that significantly improves device reliability.
产品 发布时间 : 2024-09-30
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最小起订量： 1000pcs 提交需求>
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