100V/55A N-Channel MOSFETs VM9002, Using Trench DMOS Technology to Minimize On-state Resistance and Provide Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM9002 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Features
100V, 55A, RDS(ON)=11.8mΩ@VGS=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
Networking
Load Switch
LED applications
Quick Charger
Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)
Thermal Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=50V,VGS=10V,L=0.1mH,IAS=50A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed , pulse width≦300μs , duty cycle≦2%.
4. Essentially independent of operating temperature.
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本文由Vicky转载自Viva,原文标题为:VM9002 100V N-Channel MOSFETs,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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