65V/95A N-Channel MOSFETs VM6502, Improved dv/dt Capability, Suitable for Networking and Load Switch
These N-Channel enhancement mode power field effect transistors VM6502 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Features
65V,95A, RDS(ON)=4.4mΩ@VGS=10V
Improved dv/dt capability
Fast switching
Green Device Available
Applications
Networking
Load Switch
LED applications
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Thermal Characteristics
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=55A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed , pulse width≦300μs , duty cycle≦2%.
4. Essentially independent of operating temperature.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由Vicky转载自Viva，原文标题为:VM6502 65V N-Channel MOSFETs，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
相关推荐
220V/65A N-Channel Enhancement Mode Power MOSFETs VM2002 is Suit for 1.8V Gate Drive Applications
These N-Channel enhancement mode power field effect transistors VM2002 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
产品 发布时间 : 2023-11-12
100V/55A N-Channel MOSFETs VM9002, Using Trench DMOS Technology to Minimize On-state Resistance and Provide Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM9002 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
产品 发布时间 : 2023-12-06
65V/120A N-Channel Enhancement Mode Power MOSFETs VM6503 with Improved dv/dt Capability and Fast Switching Performance
These N-Channel enhancement mode power field effect transistors VM6503 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
产品 发布时间 : 2024-03-09
UT4414 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
型号- UT4414L-S08-R,UT4414L-TN3-R,UT4414G-AE3-R,UT4414G-S08-R,UT4414,UT4414L-AE3-R,UT4414G-TN3-R
50A/65V N-Channel MOSFETs VM6505 Uses Trench DMOS Technology and has Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM6505 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
产品 发布时间 : 2023-11-10
65V/46A N-Channel Enhancement Mode Power MOSFETs VM6506, Use Trench DMOS Technology to Minimize On-State Resistance and Provide Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM6506 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
产品 发布时间 : 2024-03-06
电子商城
授权代理品牌：集成电路
授权代理品牌：分立元件
授权代理品牌：接插件及结构件
授权代理品牌：部件、组件及配件
授权代理品牌：电源及模块
授权代理品牌：电子材料
授权代理品牌：仪器仪表及测试配组件
授权代理品牌：电工工具及材料
授权代理品牌：机械电子元件
授权代理品牌：加工与定制
我要提问
登录 | 立即注册
提交评论