60V/315A Automotive N-Channel Super Trench II Power MOSFET NCEAP016N60VD with AEC-Q101 qualified
The NCE NCEAP016N60VD Automotive N-Channel Super Trench II Power MOSFET uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
VDS=60V, ID=315A(Silicon Limited) RDS(ON)=1.1mΩ , typical@VGS=10V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
175℃ operating temperature
Pb-free lead plating
100% UIS tested
100% ΔVds tested
AEC-Q101 qualified
Application
Automotive application
DC/DC Converter
Ideal for high-frequency switching and synchronous rectification
Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Thermal Characteristic
Electrical Characteristics (TC=25℃ unless otherwise noted)
Notes:
1. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
2. Guaranteed by design, not subject to production
3. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175℃. The SOA curve provides a single pulse rating.
Package Marking and Ordering Information
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可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
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