60V/315A Automotive N-Channel Super Trench II Power MOSFET NCEAP016N60VD with AEC-Q101 qualified

时间： 2023-12-14 来源：NCE

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The NCE NCEAP016N60VD Automotive N-Channel Super Trench II Power MOSFET uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R_DS(ON) and Q_g. This device is ideal for high-frequency switching and synchronous rectification.

General Features

V_DS=60V, I_D=315A(Silicon Limited) R_DS(ON)=1.1mΩ , typical@V_GS=10V

Excellent gate charge x R_DS(on) product(FOM)

Very low on-resistance R_DS(on)

175℃ operating temperature

Pb-free lead plating

100% UIS tested

100% ΔVds tested

AEC-Q101 qualified

Application

Automotive application

DC/DC Converter

Ideal for high-frequency switching and synchronous rectification

Absolute Maximum Ratings (T_C=25℃ unless otherwise noted)

Thermal Characteristic

Electrical Characteristics (T_C=25℃ unless otherwise noted)

Notes:

1. E_AS condition : T_j=25℃,V_DD=30V,V_G=10V,L=0.5mH,Rg=25Ω

2. Guaranteed by design, not subject to production

3. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T_J(MAX)=175℃. The SOA curve provides a single pulse rating.

Package Marking and Ordering Information

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