Innoscience Shipments of InnoGaN Chips Exceed 300 Million Pieces

时间： 2023-12-22 来源：Innoscience News

技术问答

Company increases sales of GaN devices by 500% year-on-year in response to predicted market growth of 65% GAGR 2022-2026

19 September 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has shipped more than 300 million pieces of its InnoGan gallium nitride chips as of August 2023, helping customers achieve small size, high energy efficiency, and low loss product design.

This is in response to phenomenal market demand across multiple sectors and multiple applications in the consumer category - fast charging, mobile phones, LEDs - as well as automotive LIDAR, data centers, and renewable energy and energy storage systems, which has seen analysts such as TrendForce's in its 2023 GaN Power Semiconductor Market Analysis Report, state that “the global GaN power device market will grow from US$180 million in 2022 to US$1.33 billion in 2026, with compound growth rate of 65%”.

In November 2017, Innoscience began the world's first 8-inch GaN-on-Si mass production line, adopting the Integrated Device Manufacturer (IDM) whole industry chain model, and launched its first low-voltage GaN power device in May 2018. By June 2019, Innoscience's 650V high-voltage GaN device had passed JEDEC approval, and subsequently, Innoscience has been the only semiconductor company in the world that simultaneously mass-produces high-voltage and low-voltage GaN.

Market acceptance of Innoscience’s high quality, high-performance GaN devices has been swift. Following its 2019 entry into the fast charging market, Innoscience’s 650V parts have been adopted in 30W-120W designs by leading brands including ASUS, Anker, Nubia, Baseus, Greenlink, and Flash.

In 2020, Innoscience’s 100V low-voltage GaN was successfully used by Hesai in mass-production LIDAR designs, allowing lasers to achieve image transmission in a shorter time.

In March 2021, the Tencent×Nubia Red Magic mobile phone 6Pro was released. It comes equipped as standard with the industry's first 120W Black Rubik's Cube GaN fast charge, which is based on Innoscience’s 650V chip. With the successive adoption by Oppo, Vivo, Lenovo, and other manufacturers, it has become an industry trend for mobile phones to be equipped with GaN fast charging as standard.

March 2021 saw the mass production of Innoscience's bi-directional conduction chip V-GaN officially begin; this device is the only GaN chip in the world that can be applied to high-voltage side load switches, smartphone USB/wireless charging ports with built-in OVP protection, multi-power supply system switch circuits, and other scenarios: one V-GaN replaces two Si MOSFETs in load switching applications resulting in a smaller and more efficient solution. In October of the same year, Innoscience scored another industry first, as OPPO used the company’s self-developed bi-directional conduction VGaN IC as the internal power switch in its latest smart phone. Other mobile phone makers such as Realme, OnePlus, Lenovo, and Motorola have also successively adopted VGaN for charging protection.

In May 2022, Shounuo released the world's smallest 45W/65W PD car charger, using Innoscience's 40V low-voltage INN040FQ043A.

Then in July, Anker and Innoscience jointly released the world's first 65W full-GaN fast charger. This design uses GaN power chips at both the AC and DC ends for the first time, taking system power density and efficiency to a whole new level.

Later, in October 2022, Innoscience achieved mass production of GaN products targeting industrial power supplies – again an industry first - comprehensively improving energy conversion efficiency and reducing system energy consumption.

In November 2022, Innoscience’s INN100W032A won the IIC World Electronics Achievement Award. The gate charge of this product is only 20% of a traditional silicon MOSFET, and its Ciss is only 40% of its silicon counterpart. It can be widely applied in motor drives, Class D, data centers, motor drivers, communication base stations, and other product fields. In January 2023, Innoscience launched the SolidGaN ISG3201, a 100V highly-integrated half-bridge drive packaged solution, further improving the overall system performance of 48V power supply of data center module power supplies, motor drives, class D power amplifiers, photovoltaic inverters and light hybrid electric vehicles.

The move to GaN as the premium power semiconductor technology is driven both by new GaN products and market demands. As an example, in April this year, Innoscience's IATF 16949 automotive-grade low-voltage parts successfully expanded from industrial to automotive applications, with use in autonomous vehicle LIDAR systems.

Then in July 2023, Innoscience began to apply GaN in the field of renewable energy, reducing the size and improving the efficiency of photovoltaic modules.

By the end of August 2023, Innoscience had successfully mass-produced 54 different types of high-voltage GaN chips (650V-700V) and 20 types of medium-low voltage GaN chips (30V-150V). Products span three chip categories: wafers, discrete devices, and integrated solutions.

Commented Dr Denis Marcon, Innoscience’s General Manager, Europe: “We are just at the start of the GaN story. The first applications were all for consumer, but GaN is undoubtedly the key to reducing costs and increasing efficiency in the industrial field as well. And according to automotive industry forecasts, GaN may enter the automotive market already this year penetrating applications such as low-power OBC and DC-DC applications in 2025. With such rapid growth in market demand, the reliability of devices, price competitiveness, and stable supply in large quantities are now the major concerns of users. Based on an advanced Innoscience’s 8-inch GaN-on-Si IDM manufacturing platform, Innoscience’s current production capacity has reached 15,000 wafers per month, providing tremendous advantages in scale, reliability and cost.”

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本文由玄子转载自Innoscience News，原文标题为:Innoscience shipments of InnoGaN chips exceed 300 million pieces，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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Application Brochure for INDUSTRIAL

型号- BD52W04G-C,SH8KXX SERIES,R6009RND3,BD900N1W,QH8KXX SERIES,R6077VNZ,LTR100L,BM2SCQ123T-LBZ,R6007RND3,BM2SCQ122T-LBZ,BD900N1G-C,RFL60TS6D,LTRL SERIES,RBR2VWM60A,BD9XXN1 SERIES,BD933N1,RFS SERIES,RBR1VWM40A,BD933N1WG-C,BM2SC12XFP2-LBZ,BD52W01G-C,LTR18,MCR10L,CSL1901,RB068VWM-60,BP3622,BP3621,BD14210G-LA,SCT4013DW7,BM2P06XMF-LBZ,R6035VNX3,RB068VWM150,MCR18L,R60XXRNX SERIES,RFS30TS6D,BD950N1WEFJ-C,CSL1901DW,BD950N1WG-C,BM2LE160FJ-C,BM2P060LF-Z,BM2SC124FP2-LBZ,BV1LE080EFJ-C,QH8MX5 SERIES,BM2SC123FP2-LBZ,SH8MC5,SCT4018KW7,RB168VWM-40,QH8KB5,R6013VNX,QH8KB6,RGWXX65C SERIES,RBR2VWM30A,BM2LE250FJ-C,RGW00TS65CHR,RFL SERIES,SH8MX5 SERIES,SCT4045DW7,BV1LE250EFJ-C,SCT4036KE,SCT4018KE,QH8MX5,SCT4045DE,R6024VNX,BM2SCQ124T-LBZ,BD52W03G-C,SCT4026DE,BM2SCQ121T-LBZ,R6055VNX,RB168VWM-60,BD48W00G-C,R6018VNX,R6055VNZ,SCT4045DR,RBR1VWM30A,SH8MB5,SCT4018KR,RGW80TS65CHR,SCT4026DR,R6035VNX,MCRL,CSL1901MW,QH8KC6,LTR10L,QH8KC5,RB168VWM150,R60A4VNZ4,BD7XXL05G-C SERIES,BM2P061MF-Z,BD52W06G-C,BM6437X,CSL1901UW,BM64378S-VA,SCT4062KR,BD900N1EFJ-C,SCT4013DE,BM2P063MF-Z,R6024VNX3,SCT4013DR,LTR100,BD7XXL05G-C,R60XXVNX SERIES,BD950N1,BD48HW0G-C,RB068VWM100,RBR2VWM40A,BD1421X-LA SERIES,RFL,BD9XXN1,SH8KXX,CSL1901VW,RFS,R6077VNZ4,RGWXX65C,BM1390GLV-Z,RBR1VWM60A,BD14215FVJ-LA,BM6437X SERIES,QH8KXX,BD52W05G-C,R6055VNX3,LTR SERIES,BM2P06XMF-LBZ SERIES,SCT4036KR,RFL30TS6D,BM2LEXXXFJ-C,BD900N1WEFJ-C,RFS60TS6D,BD733L05G-C,LTR50,BD933N1WEFJ-C,SCT4062KE,RB168VWM-30,SCT4036KW7,BM2SC12XFP2-LBZ SERIES,BM64374S-VA,BD950N1W,BD725L05G-C,BM2LE040FJ-C,R6004RND3,BD933N1W,BD730L05G-C,BD750L05G-C,BM2SC121FP2-LBZ,BM2SC122FP2-LBZ,BD900N1,BD933N1G-C,BM2P061LF-Z,BD52W02G-C,SH8KC6,LTR,BM64375S-VA,SH8KC7,BM64377S-VA,BD933N1EFJ-C,BD950N1EFJ-C,BM2LE080FJ-C,SH8MX5,QH8MB5,SCT4062KW7,MCRL SERIES,R60XXVNX,BV1LEXXXEFJ-C SERIES,RB168VWM100,R60XXRNX,RBLQ2VWM10,BD950N1G-C,LTRL,SCT4026DW7,RGW60TS65CHR,BV1LE040EFJ-C,R6055VNZ4,BM2P060MF-Z,RFS60TZ6S,RFS30TZ6S,BD900N1WG-C,CSL1901 SERIES,SH8KB7,RB068VWM-40,SH8KB6,RB068VWM-30,BV1LE160EFJ-C,RFL30TZ6S,BM2LEXXXFJ-C SERIES,QH8MC5,CSL1901YW,BD1421X-LA,BV1LEXXXEFJ-C,RFL60TZ6S,R6013VND3

商品及供应商介绍 - ROHM - Ver. 3.0 - 06.2023 PDF 英文下载

ROHM Group Corporate Profile

商品及供应商介绍 - ROHM - 2023/8/8 PDF 英文下载

英诺赛科（Innoscience）高压GaN FET/低压GaN FET/晶圆选型表

描述- 英诺赛科成立于2015年12月，是一家致力于第三代半导体硅基氮化镓研发与产业化的高新技术企业。公司采用IDM全产业链模式，集芯片设计、外延生长、芯片制造、测试与失效分析于一体，拥有全球最大的8英寸硅基氮化镓晶圆的生产能力。主要产品涵盖从低压到高压（30V-650V）的氮化镓功率器件，产品设计及性能均达到国际先进水平。

型号- INN150LA070A,INN650DA04,INN650D260A,INN650D150A,INN100W08,INN040LA015A,INN100W14,INN650D190A,INN650D080B,INN40W08,INN650N500A,INN650D350A,INN040W048A,INN650TA030A,INN650DA190A,INN650DA350A,INN650N260A,INN650DA150A,INN650DA260A,INN100W032A,INN650N150A,INN650TA080A,INN650N140A,INN650N240A

选型指南 - 英诺赛科 - 2022/11/15 PDF 中文下载

【元件】英诺赛科发布100V VGaN INV100FQ030A，双向高压阻断，支持48V BMS应用

英诺赛科宣布推出100V双向导通器件INV100FQ030A，可在电池管理系统、双向变换器的高侧负荷开关、电源系统中的开关电路等领域实现高效应用。为便于客户验证和导入，英诺赛科同步提供BMS系统解决方案，设计方案涵盖低边同口、高边同口、高边分口等。

产品发布时间 : 2023-10-16

INN040FQ043A PcbLib & SchLib & IntLib

型号- INN040FQ043A

CAD模型库 - 英诺赛科 - 2023/12/12 RAR 英文下载

【元件】采用FCQFN小体积封装的两款100V新品氮化镓功率器件，旨在提高电源功率转换效率，降低系统损耗与成本

英诺赛科已相继发布了INN100W032A、INN100W027A、INN100W070A等采用WLCSP封装的100V产品，并获得市场良好反馈。基于终端应用多样化，英诺赛科再次推出INN100FQ016A和INN100FQ025A，采用FCQFN小体积封装，延续了低导阻、低栅极电荷、低开关损耗和极低的反向恢复电荷等特性，具有良好的效率表现。

新产品发布时间 : 2023-08-17