Innoscience Shipments of InnoGaN Chips Exceed 300 Million Pieces
Company increases sales of GaN devices by 500% year-on-year in response to predicted market growth of 65% GAGR 2022-2026
19 September 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has shipped more than 300 million pieces of its InnoGan gallium nitride chips as of August 2023, helping customers achieve small size, high energy efficiency, and low loss product design.
This is in response to phenomenal market demand across multiple sectors and multiple applications in the consumer category - fast charging, mobile phones, LEDs - as well as automotive LIDAR, data centers, and renewable energy and energy storage systems, which has seen analysts such as TrendForce's in its 2023 GaN Power Semiconductor Market Analysis Report, state that “the global GaN power device market will grow from US$180 million in 2022 to US$1.33 billion in 2026, with compound growth rate of 65%”.
In November 2017, Innoscience began the world's first 8-inch GaN-on-Si mass production line, adopting the Integrated Device Manufacturer (IDM) whole industry chain model, and launched its first low-voltage GaN power device in May 2018. By June 2019, Innoscience's 650V high-voltage GaN device had passed JEDEC approval, and subsequently, Innoscience has been the only semiconductor company in the world that simultaneously mass-produces high-voltage and low-voltage GaN.
Market acceptance of Innoscience’s high quality, high-performance GaN devices has been swift. Following its 2019 entry into the fast charging market, Innoscience’s 650V parts have been adopted in 30W-120W designs by leading brands including ASUS, Anker, Nubia, Baseus, Greenlink, and Flash.
In 2020, Innoscience’s 100V low-voltage GaN was successfully used by Hesai in mass-production LIDAR designs, allowing lasers to achieve image transmission in a shorter time.
In March 2021, the Tencent×Nubia Red Magic mobile phone 6Pro was released. It comes equipped as standard with the industry's first 120W Black Rubik's Cube GaN fast charge, which is based on Innoscience’s 650V chip. With the successive adoption by Oppo, Vivo, Lenovo, and other manufacturers, it has become an industry trend for mobile phones to be equipped with GaN fast charging as standard.
March 2021 saw the mass production of Innoscience's bi-directional conduction chip V-GaN officially begin; this device is the only GaN chip in the world that can be applied to high-voltage side load switches, smartphone USB/wireless charging ports with built-in OVP protection, multi-power supply system switch circuits, and other scenarios: one V-GaN replaces two Si MOSFETs in load switching applications resulting in a smaller and more efficient solution. In October of the same year, Innoscience scored another industry first, as OPPO used the company’s self-developed bi-directional conduction VGaN IC as the internal power switch in its latest smart phone. Other mobile phone makers such as Realme, OnePlus, Lenovo, and Motorola have also successively adopted VGaN for charging protection.
In May 2022, Shounuo released the world's smallest 45W/65W PD car charger, using Innoscience's 40V low-voltage INN040FQ043A.
Then in July, Anker and Innoscience jointly released the world's first 65W full-GaN fast charger. This design uses GaN power chips at both the AC and DC ends for the first time, taking system power density and efficiency to a whole new level.
Later, in October 2022, Innoscience achieved mass production of GaN products targeting industrial power supplies – again an industry first - comprehensively improving energy conversion efficiency and reducing system energy consumption.
In November 2022, Innoscience’s INN100W032A won the IIC World Electronics Achievement Award. The gate charge of this product is only 20% of a traditional silicon MOSFET, and its Ciss is only 40% of its silicon counterpart. It can be widely applied in motor drives, Class D, data centers, motor drivers, communication base stations, and other product fields. In January 2023, Innoscience launched the SolidGaN ISG3201, a 100V highly-integrated half-bridge drive packaged solution, further improving the overall system performance of 48V power supply of data center module power supplies, motor drives, class D power amplifiers, photovoltaic inverters and light hybrid electric vehicles.
The move to GaN as the premium power semiconductor technology is driven both by new GaN products and market demands. As an example, in April this year, Innoscience's IATF 16949 automotive-grade low-voltage parts successfully expanded from industrial to automotive applications, with use in autonomous vehicle LIDAR systems.
Then in July 2023, Innoscience began to apply GaN in the field of renewable energy, reducing the size and improving the efficiency of photovoltaic modules.
By the end of August 2023, Innoscience had successfully mass-produced 54 different types of high-voltage GaN chips (650V-700V) and 20 types of medium-low voltage GaN chips (30V-150V). Products span three chip categories: wafers, discrete devices, and integrated solutions.
Commented Dr Denis Marcon, Innoscience’s General Manager, Europe: “We are just at the start of the GaN story. The first applications were all for consumer, but GaN is undoubtedly the key to reducing costs and increasing efficiency in the industrial field as well. And according to automotive industry forecasts, GaN may enter the automotive market already this year penetrating applications such as low-power OBC and DC-DC applications in 2025. With such rapid growth in market demand, the reliability of devices, price competitiveness, and stable supply in large quantities are now the major concerns of users. Based on an advanced Innoscience’s 8-inch GaN-on-Si IDM manufacturing platform, Innoscience’s current production capacity has reached 15,000 wafers per month, providing tremendous advantages in scale, reliability and cost.”
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本文由玄子转载自Innoscience News，原文标题为:Innoscience shipments of InnoGaN chips exceed 300 million pieces，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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英诺赛科宣布推出100V双向导通器件INV100FQ030A，可在电池管理系统、双向变换器的高侧负荷开关、电源系统中的开关电路等领域实现高效应用。为便于客户验证和导入，英诺赛科同步提供BMS系统解决方案，设计方案涵盖低边同口、高边同口、高边分口等。
【元件】采用FCQFN小体积封装的两款100V新品氮化镓功率器件，旨在提高电源功率转换效率，降低系统损耗与成本
英诺赛科已相继发布了INN100W032A、INN100W027A、INN100W070A等采用WLCSP封装的100V产品，并获得市场良好反馈。基于终端应用多样化，英诺赛科再次推出INN100FQ016A和INN100FQ025A，采用FCQFN小体积封装，延续了低导阻、低栅极电荷、低开关损耗和极低的反向恢复电荷等特性，具有良好的效率表现。
英诺赛科InnoGaN产品进入苹果合作伙伴mophie供应链，采用的DFN封装，占板面积非常小
Apple Store上架了两款mophie出品的氮化镓充电器，mophie Speedport 30和 Speedport 67两款氮化镓充电器均采用英诺赛科GaN功率器件，本文充电头网介绍这两款英诺赛科GaN功率器件的特色亮点。
英诺赛科持续推出高压和低压GaN功率器件，氮化镓场效应管等产品高频高效助力绿色能源革命
2022年，在全球“双碳”战略的推动下，第三代半导体GaN也在应用市场中展露锋芒，基于其高频、高效、低能耗的优势，终端应用厂商对GaN的需求也迎来了持续攀升。英诺赛科作为全球领先的第三代半导体GaN IDM企业，一直致力于GaN功率器件性能及应用领域的突破，于2022年陆续推出了高压、低压等全电压领域产品。
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可定制LAMP LED、 CHIP LED、 PLCC LED、 汽车用车规级LED、COB LED的尺寸/电压/电流等参数，电压1.5-37V，电流5-150mA，波长470-940nm。
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