100V/185A N-channel SGT MOSFET AKG10N038DM especially for High Efficiency Power Management Applications

时间： 2023-12-28 来源：ALKAIDSEMI

技术问答

This N-channel SGT MOSFET AKG10N038DM has been designed for low on-state resistance and maintains superior switching performance, especially for high efficiency power management applications.

Features:

Low R_DS(ON)

RoHS compliant

Halogen-free

100% UIS tested

Applications

Power Management Switches

DC-DC Converter

Battery Management System

Maximum Ratings (T_A=25℃ unless otherwise noted)

Thermal Characteristics

Notes:

1. The max drain current rating is silicon limited

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=0.5mH, V_DD=50V, I_AS=42A, Rg=50Ω, Starting T_J=25℃

4. Mount on minimum PCB layout

Ordering Information

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