MOSFET晶圆后端工艺 (BGBM)
MOSFET背面金属化工艺
正面金属化工艺是MOSFET晶圆减薄前的一个关键工艺，由于MOSFET具备高开关切换速度，低输入阻抗与低功率耗损之特性，必须承受大电流，因此在工艺上，必须使用铜夹焊接 (Clip Bond)加大电流路径来取代金属打线焊接(Wire Bond)，藉此降低导线电阻与RDS(on)(导通阻抗)。
而正面金属化工艺的目的，就是藉由溅镀或化镀方式形成UBM，接着做铜夹焊接 (Clip Bond)，以降低导线电阻。
在使用夹焊(Clip Bond)时，由于铝垫上方必须要有凸块下金属层(Under Bump Metallurgy, 下称UBM)，来做为铝垫和凸块(Bump)之间的焊接表面(Solder Surface)。UBM的组成金属元素，在溅镀和化镀上各有不同，溅镀使用钛/镍钒/银(Ti/NiV/Ag)；化镀则是使用镍金/镍钯金(NiAu/NiPdAu)。
金属蒸发沉积流程
晶圆完成入站检验后 (IQC)，按照客户指示之种类及厚度进行靶材准备后，进入蒸镀机沉积金属 (Evaporator)。完成金属蒸镀沉积 (Metal Evaporation) 后，以Alpha Step进行随货样本片量测，再依客户需求进行产品上非破坏性XRF量测，将各层金属量测 (Measurement) 完成后，出站检验 (OQC)，至此BGBM制程完成。
案例分享(无金属剥离)
案例分享(金属蒸发沉积)
应用范围
现有金属组合：Ti / Ni / Ag、 Ti / Ni / Ti / Ag、 Ti / Ni / Ag / Ni、 Ti / Ni / Ag / Sn
厚银工艺流程
晶圆完成入站检验后 (IQC)，按照客户指示之种类及厚度进行靶材准备后，进入蒸镀机 (Evaporator) 沉积金属。完成金属沉积 (Metal Evaporation) 后，再接着，进行厚度量测后 (Measurement)，出站检验 (OQC)。
案例分享（厚银工艺)
应用范围
搭配Taiko Wafer可使Warpage降低是极佳的组合
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本文由扶摇转载自HI-SEMICON公众号，原文标题为:MOSFET 晶圆后端工艺 (BGBM)，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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正面金属化工艺是MOSFET晶圆减薄前的一个关键工艺，由于MOSFET具备高开关切换速度，低输入阻抗与低功率耗损之特性，必须承受大电流，因此在工艺上，必须使用铜夹焊接 (Clip Bond)加大电流路径来取代金属打线焊接(Wire Bond)，藉此降低导线电阻与RDS(on)(导通阻抗)。
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