80V/75A N-Channel MOSFETs VM8002 Using Trench DMOS Technology to Minimize On-state Resistance

时间： 2024-01-05 来源：Viva

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N-Channel MOSFETs,N-Channel enhancement mode power field effect transistors,VM8002,昱盛电子

These N-Channel enhancement mode power field effect transistors VM8002 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

N-Channel MOSFETs VM8002 Features

80V,75A, R_DS(ON)=7mΩ@V_GS=10V

Improved dv/dt capability

Fast switching

100% EAS Guaranteed

Green Device Available

Applications

Motor Drive

Power Tools

LED Lighting

Absolute Maximum Ratings(Tc=25℃ unless otherwise noted)

Thermal Characteristics

Electrical Characteristics (T_J=25℃, unless otherwise noted)

Note :

1. Repetitive Rating: Pulsed width limited by maximum junction temperature.

2. V_DD=25V,V_GS=10V,L=0.1mH,I_AS=50A,R_G=25Ω,Starting T_J=25℃.

3. The data tested by pulsed, pulse width ≦ 300μs, duty cycle ≦ 2%.

4. Essentially independent of operating temperature.

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