-30V/-72A P-Channel Power MOSFET CMP3009TF5 for Battery management, Power management and Load switch
The CMP3009TF5 P-Channel Power MOSFET is the P-Channel enhancement mode power field effect transistors with high cell density, trench technology. This high-density process and design have been optimized for switching performance and especially tailored to minimize on-state resistance.
Features
VDS: -30V
ID: -72A
RDSON (@VGS=-10V) : <7.0mΩ
RDSON (@VGS=-4.5V) : <11.4mΩ
High-density cell design for extremely low RDSON
Excellent on-resistance and DC capability
Applications
Battery management
Power management
Load switch
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Electrical Characteristics (TJ=25℃ unless otherwise noted)
Noted:
(1) Pulse Test: Pulse Width≤300μs, Duty cycle ≤2%.
(2) The value of RθJA is measured with the device mounted on a lin2 FR-4 board with 2oz. Copper, in a still air environment with TA=25℃. The Power dissipation PDSM is based on RθJA t≤10s and the maximum allowed junction temperature of 150°C. The value of any given application depends on the user's specific board design.
(3) Single pulse width limited by junction temperature TJ(MAX)=150℃.
(4) The power dissipation PD is based on TJ(MAX) =150℃, using junction-to-case thermal resistance, and is more useful in setting the upper Dissipation limit for cases where additional heatsinking is used.
(5) The RθJA is the sum of the thermal impedance from junction to case RθJA and case to ambient.
(6) Drain current limited by maximum junction temperature.
Ordering Information
Marking Information
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本文由Vicky转载自APM，原文标题为:CMP3009TF5 P-Channel 30V (D-S) Power MOSFET，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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