SLKOR Semiconductor N-channel MOSFET Field-effect Transistor FDN327N: Suitable for Small Electronic Devices

2024-01-17 SLKOR News
N-channel MOSFET field-effect transistor,N-channel MOSFET,low-voltage MOSFET,FDN327N N-channel MOSFET field-effect transistor,N-channel MOSFET,low-voltage MOSFET,FDN327N N-channel MOSFET field-effect transistor,N-channel MOSFET,low-voltage MOSFET,FDN327N N-channel MOSFET field-effect transistor,N-channel MOSFET,low-voltage MOSFET,FDN327N

The FDN327N is an N-channel MOSFET field-effect transistor manufactured by SLKOR. One of its main features is its high power and high current handling capability. It can withstand a continuous drain current of 2A and has an on-state resistance of 40mΩ (Vgs = 4.5V, Id = 2.0A), with a drain-source voltage (Vdss) of 20V. These parameters allow the FDN327N to deliver excellent performance in applications that require handling high power and high currents, such as pulse width modulation and load switching.


Furthermore, the FDN327N features a compact SOT-23 package. This compact packaging design makes the FDN327N highly suitable for small electronic devices with limited space. Whether it's mobile electronic devices or other compact circuit boards, the size of the FDN327N provides higher flexibility and integration. This allows developers to optimize space utilization in their designs and meet the requirements of small devices.


Another important feature is the threshold voltage of the FDN327N. It has a threshold voltage of 0.7V, which means that it can be triggered to conduct with smaller control signals. This is beneficial for applications that require low voltage operation, as it can reduce power consumption and improve efficiency. Additionally, the low threshold voltage makes the FDN327N easier to integrate and use in low voltage systems.


Here are some key parameters of the FDN327N:

●Drain-Source Voltage (Vdss): 20V

●Continuous Drain Current (Id): 2A

●On-State Resistance (RDS(on)@Vgs,Id): 40mΩ@4.5V,2.0A

●Threshold Voltage (Vgs(th)@Id): 0.7V@250μA

●Package: SOT-23

Lastly, let's take a look at some common application areas of the FDN327N. First is pulse width modulation (PWM) applications. The FDN327N can be used for controlling the switching of loads in circuits through pulse width modulation. With its high power and current handling capability, it is well-suited for load switching control in PWM applications. Additionally, this low-voltage MOSFET can also play a role in load switching applications. It can be used for controlling load switches in circuits, such as turning on and off power supplies or other electronic devices. Designed for load switching, the FDN327N features low on-state resistance and high drain current capability, enabling efficient power transmission. This makes it very useful in applications that require frequent switching operations or handle high-power loads.

Fig.4

From this, it is evident that the FDN327N, as a low-voltage MOSFET, exhibits excellent performance in PWM and load switching applications. Its compact packaging, high power and current handling capability, and outstanding electrical characteristics make it an ideal choice for many electronic devices. Whether in mobile electronic devices or other applications that require small circuit boards, the FDN327N offers reliable performance and flexible integration capabilities.

授权代理商:世强先进(深圳)科技股份有限公司
技术资料,数据手册,3D模型库,原理图,PCB封装文件,选型指南来源平台:世强硬创平台www.sekorm.com
现货商城,价格查询,交期查询,订货,现货采购,在线购买,样品申请渠道:世强硬创平台电子商城www.sekorm.com/supply/
概念,方案,设计,选型,BOM优化,FAE技术支持,样品,加工定制,测试,量产供应服务提供:世强硬创平台www.sekorm.com
集成电路,电子元件,电子材料,电气自动化,电机,仪器全品类供应:世强硬创平台www.sekorm.com
  • +1 赞 0
  • 收藏
  • 评论 0

本文由三年不鸣转载自SLKOR News,原文标题为:【Daily Highlight】SLKOR Semiconductor Low Voltage MOSFET FDN327N: Suitable for Small Electronic Devices,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

评论

   |   

提交评论

全部评论(0

暂无评论

相关推荐

The 200V/19A N-channel MOSFET IRF640, An Ideal Switching Component In the Motor Drive Systems of New Energy Vehicles

The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250μA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new energy vehicles, especially in situations requiring high efficiency and precise control. It is suitable for various medium-voltage switching and power control applications.

产品    发布时间 : 2024-03-30

The 60V/50A N-channel MOSFET SL50N06D, Suitable for the Power Transmission System in BLDC Motor Control Systems

The SL50N06D is an N-channel MOSFET utilizing advanced Trench technology in its production. It features a high drain-source voltage (60V) and continuous drain current (50A), offering advantages such as high frequency, high current, and strong anti-impact capability. Additionally, its low on-resistance and low threshold voltage ensure reduced power loss during operation. This device delivers excellent switching performance, can withstand high-energy pulses under avalanche and commutation modes, providing reliable power control and efficient performance for circuit design.

产品    发布时间 : 2024-03-28

SLKOR Semiconductor Low Voltage MOSFET SL276N04M: Outstanding Performance and Wide Range of Application Areas

SLKOR low-voltage MOSFET SL276N04M is an N-channel MOSFET with outstanding performance and a wide range of applications. This product plays an important role in the electronics industry, providing stable power supply and control functions for various circuits and devices. The MOSFET‘s parameters demonstrate its excellent technical indicators. It has a drain-source voltage of 40V and a continuous drain current of 276A, indicating that it can withstand high voltage and current loads.

产品    发布时间 : 2024-01-18

IRF540N/NS 100V N-Channel MOSFET

型号- IRF540NS,IRF540N

数据手册  -  SLKOR  - 2022/11/25 PDF 英文 下载

数据手册  -  SLKOR  - 2022/11/10 PDF 英文 下载

数据手册  -  SLKOR PDF 英文 下载

数据手册  -  SLKOR  - 2017/12/28 PDF 英文 下载 查看更多版本

2SK3019 N-channel MOSFET

型号- 2SK3019

数据手册  -  SLKOR  - Rev.1  - 21 December 2017 PDF 英文 下载

SL5N50D N-Channel MOSFET

型号- SL5N50D

数据手册  -  SLKOR  - 2022/3/29 PDF 英文 下载

数据手册  -  SLKOR  - Rev.1  - 14 April 2020 PDF 英文 下载

SLKOR Semiconductor Medium Voltage MOSFET SL68N08G, an Ideal Choice for High-performance Motor Drivers

The SL68N08G medium-voltage MOSFET from SLKOR Semiconductor is an important innovation achievement of ours. The SL68N08G is an N-channel MOSFET with a drain-source voltage of 80V, a continuous drain current of 68A, and an on-resistance of 6.4mΩ. This product features an advanced trench structure design, which ensures reliability and durability. This design not only improves the device‘s heat dissipation capability but also enhances the overall circuit efficiency. Additionally, this product is compliant with ROHS standards and is halogen-free.

产品    发布时间 : 2024-01-23

数据手册  -  SLKOR  - Rev.1  - 24 June 2019 PDF 英文 下载

The Medium Voltage MOSFET IRF540NS with a Threshold Voltage (Vgs(th)) of 4.0V@250μA and Drain-source Voltage (Vdss) of 100V

The medium-voltage MOSFET IRF540NS is an outstanding N-channel field-effect transistor, known for its high drain-source voltage, continuous drain current, low on-state resistance, and low threshold voltage. These characteristics make it an ideal choice for power management, drive control, and energy conversion in communication systems. The application of IRF540NS will further propel the development of communication technology, providing people with more convenient and efficient communication experiences.

产品    发布时间 : 2024-03-15

MOSFETs SL18N20 Efficient Power Switching Solutions

Slkor Semiconductor‘s SL18N20 is a silicon N-channel enhancement mode VDMOSFET, developed using self-aligned planar technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. This excellent transistor product has a wide range of applications in various power switch circuits, providing crucial support for system miniaturization and higher efficiency.

产品    发布时间 : 2024-03-14

数据手册  -  SLKOR  - Rev.1  - 12 March 2020 PDF 英文 下载

展开更多

电子商城

查看更多

品牌:科信

品类:MOSFET

价格:

现货: 0

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0917

现货: 4,515,560

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0904

现货: 3,651,000

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0884

现货: 3,341,070

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0899

现货: 3,056,990

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0879

现货: 2,784,075

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0834

现货: 2,014,821

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.1100

现货: 1,995,500

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0904

现货: 1,967,800

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0679

现货: 1,772,550

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

现货市场

查看更多

品牌:福斯特半导体

品类:MOS

价格:¥1.4550

现货:100

品牌:福斯特半导体

品类:MOS

价格:¥0.6300

现货:100

品牌:福斯特半导体

品类:MOS

价格:¥1.8600

现货:100

品牌:福斯特半导体

品类:MOS

价格:¥0.9750

现货:100

品牌:福斯特半导体

品类:MOS

价格:¥0.6300

现货:100

品牌:福斯特半导体

品类:MOS

价格:¥0.8100

现货:90

品牌:福斯特半导体

品类:MOS

价格:¥1.1550

现货:90

品牌:福斯特半导体

品类:MOS

价格:¥2.9700

现货:50

品牌:福斯特半导体

品类:MOS

价格:¥2.1450

现货:50

品牌:福斯特半导体

品类:MOS

价格:¥1.8600

现货:50

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

服务

查看更多

功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

实验室地址: 西安 提交需求>

查看更多

授权代理品牌:接插件及结构件

查看更多

授权代理品牌:部件、组件及配件

查看更多

授权代理品牌:电源及模块

查看更多

授权代理品牌:电子材料

查看更多

授权代理品牌:仪器仪表及测试配组件

查看更多

授权代理品牌:电工工具及材料

查看更多

授权代理品牌:机械电子元件

查看更多

授权代理品牌:加工与定制

世强和原厂的技术专家将在一个工作日内解答,帮助您快速完成研发及采购。
我要提问

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

研发客服
商务客服
服务热线

联系我们

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

投诉与建议

E-mail:claim@sekorm.com

商务合作

E-mail:contact@sekorm.com

收藏
收藏当前页面