SLKOR Semiconductor Low Voltage MOSFET SL318N04M with a Vdss of 40V and a Id of 318A
The SL318N04M is an N-channel MOSFET with a drain-source voltage (Vdss) of 40V, a continuous drain current (Id) of 318A, an on-resistance (RDS(on)@Vgs, Id) of 0.7mΩ@10V, 20A, a threshold voltage (Vgs(th)@Id) of 1.7V@250μA. It is packaged in LFPAK (5x6) and complies with the RoHS standard, being halogen-free. The distinguishing feature of the SL318N04M lies in its fast switching speed, as well as its reliable and robust performance. These excellent characteristics enable it to operate stably in various complex circuits, making it an essential component in many electronic devices.
In addition, the SL318N04M has a wide range of applications. In DC-DC converters, it can effectively convert electrical energy and provide reliable power protection. In switch-mode power supplies, can assist in achieving intelligent control and efficient energy saving. In motor control, it can precisely control parameters such as motor speed and direction, thereby improving motor operational efficiency.
The introduction of the SL318N04M not only adds to the selection in the domestic low-voltage MOSFET market but also represents an important achievement in SLKOR Semiconductor's commitment to independent research and development and innovation. By continuously advancing product technological innovation and creativity, SLKOR Semiconductor injects a strong impetus into the development of China's semiconductor industry. At the same time, it signifies that Chinese enterprises will encounter more opportunities and challenges in the localization process of the semiconductor field.
In future development, with the continuous progress of technology and changes in the market, SLKOR Semiconductor will continue to devote itself to independent research development and innovation, promoting the process of domestic substitution for key electronic components. By creating higher quality and more efficient products, SLKOR Semiconductor will become an outstanding player in China's semiconductor industry, making greater contributions to achieving high-quality economic development.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由三年不鸣转载自SLKOR News,原文标题为:【Daily Highlight】SLKOR Semiconductor Low Voltage MOSFET SL318N04M,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
The 200V/19A N-channel MOSFET IRF640, An Ideal Switching Component In the Motor Drive Systems of New Energy Vehicles
The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250μA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new energy vehicles, especially in situations requiring high efficiency and precise control. It is suitable for various medium-voltage switching and power control applications.
SLKOR Semiconductor Low Voltage MOSFET SL276N04M: Outstanding Performance and Wide Range of Application Areas
SLKOR low-voltage MOSFET SL276N04M is an N-channel MOSFET with outstanding performance and a wide range of applications. This product plays an important role in the electronics industry, providing stable power supply and control functions for various circuits and devices. The MOSFET‘s parameters demonstrate its excellent technical indicators. It has a drain-source voltage of 40V and a continuous drain current of 276A, indicating that it can withstand high voltage and current loads.
SLKOR Semiconductor Medium Voltage MOSFET SL68N08G, an Ideal Choice for High-performance Motor Drivers
The SL68N08G medium-voltage MOSFET from SLKOR Semiconductor is an important innovation achievement of ours. The SL68N08G is an N-channel MOSFET with a drain-source voltage of 80V, a continuous drain current of 68A, and an on-resistance of 6.4mΩ. This product features an advanced trench structure design, which ensures reliability and durability. This design not only improves the device‘s heat dissipation capability but also enhances the overall circuit efficiency. Additionally, this product is compliant with ROHS standards and is halogen-free.
60V/30A N-channel MOSFET SL30N06D with Low On-state Resistance and Low Threshold Voltage Makes It An Ideal Choice for Automotive Electronic Systems
The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250μA). These features make it an ideal choice for automotive electronic systems.
The 50V/220mA N-channel MOSFET BSS138 with High Efficiency, Low Power Consumption and High Reliability Is Suitable for LED Driving Applications
The Slkor Medium Voltage MOSFET BSS138 is an N-channel MOSFET with a drain-source voltage of 50V and a continuous drain current of 220mA. It is renowned for its low on-state resistance (3.5Ω@10V, 220mA) and low threshold voltage (1.6V@1mA). This MOSFET offers numerous advantages in LED driving applications, including high efficiency, low power consumption and high reliability. With careful design and selection, its role in LED driving circuits can be fully utilized, providing stable and efficient lighting solutions for modern electronic devices.
The 60V/50A N-channel MOSFET SL50N06D, Suitable for the Power Transmission System in BLDC Motor Control Systems
The SL50N06D is an N-channel MOSFET utilizing advanced Trench technology in its production. It features a high drain-source voltage (60V) and continuous drain current (50A), offering advantages such as high frequency, high current, and strong anti-impact capability. Additionally, its low on-resistance and low threshold voltage ensure reduced power loss during operation. This device delivers excellent switching performance, can withstand high-energy pulses under avalanche and commutation modes, providing reliable power control and efficient performance for circuit design.
SLKOR High-voltage MOSFET SL13N50FS with an On-resistance of 520mΩ@10V and a Continuous Drain Current of 13A
One of the important products of SLKOR is the high-voltage MOSFET SL13N50FS. The SL13N50FS is an N-channel MOSFET with a drain-source voltage of 500V, a continuous drain current of 13A, and a power handling capability of 50W. Additionally, it has an on-resistance of 520mΩ@10V, 6.5A, and exhibits fast switching characteristics under low current and low gate charge conditions. This makes the SL13N50FS perform exceptionally well in applications such as high-frequency switch-mode power supplies.
The 60V/60A N-channel MOSFET SL60N06 with Superior High-frequency Characteristics, Enabling Rapid Switching and Precise Control Within the Microwave Frequency Range
Slkor SL60N06is an N-channel MOSFET with a 60V drain-source voltage and a continuous drain current of 60A. It is renowned for its low on-resistance (11.5mΩ@10V,30A) and relatively low threshold voltage (4V@250μA). With the rapid advancement of microwave technology, the application of high-frequency circuits in fields such as radar, communication, and satellite navigation is becoming increasingly widespread. These attributes have garnered significant attention for the SL60N06 as a key component in high-frequency circuits, thanks to its excellent performance and reliability.
Efficient Low Voltage MOSFET SL120N03R with a Vdss of 30V, a continuous drain current (Id) of 120A
SL120N03R is a low-voltage MOSFET produced by SLKOR Semiconductor Company. It is manufactured using advanced Trench technology, providing users with excellent gate charge and on-resistance (RDSon), thereby reducing communication and conduction losses. Therefore, this device is very suitable for AC/DC power conversion, load switching, and industrial power applications.
Low-voltage MOSFET SLKOR SL100N03R with a Drain-source Voltage of 30V and a Continuous Drain Current of up to 100A
SL100N03R has the following features, making it highly favored in the market. Firstly, it ensures high reliability and stability through 100% avalanche testing. Secondly, the device is user-friendly, allowing easy integration into various circuit designs. Additionally, SL100N03R is compliant with RoHS standards, free from hazardous substances, and meets environmental requirements.
The 60V/3A N-channel MOSFET SL2310 Ensuring the Stability and Reliability of Battery Switches
Slkor SL2310 is an N-channel MOSFET with a 60V drain-source voltage and a continuous drain current of 3A. It is renowned for its low on-resistance (105mΩ at 10V, 3A) and relatively low threshold voltage (2V at 250μA). These features make the SL2310 an ideal choice for switches and signal processing components in small household appliance applications, particularly where efficient and precise control is required.
High-performance MOSFETs Drive Innovation in the Field of Electronic Applications - SLKOR Semiconductor SL1002B
SL1002B is a high-cell-density trench N-channel MOSFET that provides excellent RDSON and efficiency for most small power switching and load switching applications.
The Medium Voltage MOSFET MMBF170L with a Appropriate Drain-source Voltage (60V), Continuous Drain Current (300mA)
MMBF170L is an N-channel MOSFET known for its excellent product characteristics, including appropriate drain-source voltage (60V), continuous drain current (300mA), low on-state resistance (3Ω@10V, 500mA), and a lower threshold voltage (2.5V@ 250μA), making it an ideal choice for applications in power management, electric motor control, charging stations, and auxiliary electronic device control.
The 60V/300mA N-channel MOSFET 2N7002E Effectively Enhances the Efficiency, Stability and Reliability of Power Management Systems
The Slkor Medium Voltage MOSFET 2N7002E is an N-channel MOSFET featuring a 60V drain-source voltage and a continuous drain current of 300mA. It‘s renowned for its low on-state resistance (3Ω@10V, 500mA) and low threshold voltage (2.5V@250μA). The advantages of this Medium Voltage MOSFET in power management lie in its efficient, reliable, and flexible handling of current and voltage. It effectively enhances the efficiency, stability, and reliability of power management systems.
电子商城
现货市场
服务
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
登录 | 立即注册
提交评论