High-performance MOSFETs Drive Innovation in the Field of Electronic Applications - SLKOR Semiconductor SL1002B

Shenzhen SLKOR Micro semicon Co., Ltd. is a company dedicated to promoting independent innovation and research and development in the Chinese semiconductor industry. In the face of increasingly fierce global competition in the semiconductor industry, the Chinese semiconductor industry is facing tremendous opportunities and challenges. Independent research and development and innovation are considered crucial for improving the core competitiveness of the Chinese semiconductor industry. As a company focused on the semiconductor field, SLKOR  understands that relying on imported technology and products cannot meet the long-term needs of the domestic market or achieve sustainable development of the semiconductor industry.

Therefore, SLKOR has always adhered to the path of independent research and development and production, striving to increase the localization rate and achieve domestic substitution of key electronic components through independent research and development and innovation. SLKOR has achieved a series of results in independent research and development and innovation. In the future, SLKOR will continue to adhere to the path of independent research and development and innovation, continuously improve product quality and technological level, and make greater contributions to the development of the Chinese semiconductor industry.

Fig.1

In recent years, with the rapid development of electronic technology and the increasing number of intelligent applications, there has been a growing demand for high-performance and high-efficiency electronic components. The product line of SLKOR covers various electronic components, including the medium-voltage MOSFET SL1002B.

Fig.2

SL1002B is a high-cell-density trench N-channel MOSFET that provides excellent RDSON and efficiency for most small power switching and load switching applications. This MOSFET not only has excellent performance but also meets RoHS and green product requirements. The parameters of SL1002B are as follows: Type: N-channel, Drain-Source Voltage (Vdss): 100V, Continuous Drain Current (Id): 1A, Power Dissipation (Pd): 1W, On-Resistance (RDS(on)@Vgs,Id): 260mΩ@10V,1A, Threshold Voltage (Vgs(th)@Id): 1.5V@250μA. In addition, SL1002B also features ultra-low gate charge, excellent Cdv/dt effect reduction, advanced high-cell-density Trench technology, and other characteristics.

Fig.3

SL1002B has a series of excellent technical parameters. First, it adopts ultra-low gate charge technology, which gives it higher conduction efficiency and lower power consumption. Second, it has outstanding Cdv/dt effect reduction characteristics and can provide stable and reliable performance in high-frequency switching applications. In addition, the product also uses advanced high-cell-density Trench technology, which results in lower resistance and stronger conduction capability. These characteristics make SL1002B an ideal choice for high-performance applications.

Fig.4

The emergence of SL1002B provides strong support for localization efforts. SL1002B is widely used in various fields, playing a crucial role in power management systems. For example, in DC-DC converters, it can provide efficient energy conversion and stable dynamic response, thereby improving overall power efficiency and reliability. Additionally, SL1002B can be applied in devices such as switch-mode power supplies and LED drivers, offering high-performance power switching capabilities. Apart from power management systems, this MOSFET finds extensive applications in motor control and automotive electronics. In motor control, SL1002B's high cell density and low gate charge enable higher control precision and lower power consumption, resulting in efficient motor drive. In the field of automotive electronics, SL1002B can be used in electric vehicle charging stations, battery management systems, and other components.

Fig.5

In conclusion, SLKOR SL1002B is a high-performance and high-efficiency medium-voltage MOSFET. Through continuous independent research and innovation, SLKOR has made significant progress in the semiconductor field. The company's independent research and innovation not only enhance product performance and reliability but also contribute to the technological advancement and localization process of China's semiconductor industry. With ongoing technological advancements and market changes, SLKOR will continue to focus on independent research and innovation, creating high-quality and efficient products like the medium-voltage MOSFET SL1002B, injecting strong momentum into the development of China's semiconductor industry.