150V/100A N-Channel Super Trench Power MOSFET NCEP15T10V, Providing An Extremely Low Combination of RDS(ON) and Qg

时间： 2024-01-20 来源：NCE

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The NCEP15T10V N-Channel Super Trench Power MOSFET uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R_DS(ON) and Q_g. This device is ideal for high-frequency switching and synchronous rectification.

General Features

V_DS=150V, I_D=100A, R_DS(ON)=5.7mΩ (typical) @V_GS=10V

Excellent gate charge x R_DS(on) product(FOM)

Very low on-resistance R_DS(on)

150°C operating temperature

Pb-free lead plating

100% UIS TESTED

100% ΔVds TESTED

Application

DC/DC Converter

Ideal for high-frequency switching and synchronous rectification

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Thermal Characteristic

Electrical Characteristics (T_C=25℃ unless otherwise noted)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t≤10 sec.

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25℃,V_DD=50V,V_G=10V,L=0.5mH,Rg=25Ω

Package Marking and Ordering Information

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NCE（新洁能）为电路设计师们提供全面的产品选择，击穿电压覆盖-200V至300V,以及100mA至400A的电流选择范围,低开关损耗的系列产品（产品名称后加标C）其有效降低了栅极电荷（Qg），尤其是栅极漏极间的电荷（Qgd），从而在快速开关过程中降低开关功率损耗。应对于半桥/全桥、AC/DC电源的同步整流以及其它需要反向续流的应用终端，新洁能的MOSFET着重优化了Body Diode，在提高和加快反向续流能力的同时，降低反向恢复过程中的峰值电流（Irm）和电压（Vrm）。推出的TO-220H封装外形（产品名称后加标H），有效地增加了用户在电路板装配MOSFET的工作效率，并大大降低成本，可广泛应用于直流-直流转换,次级侧同步整流器,电机控制等领域。