1200V/20A SiC Power Schottky Rectifier S4D20120A/H/G with 175℃ TJ Operation and Ultra-low Switching Loss

时间： 2024-01-24 来源：SMC News

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SiC Power Schottky Rectifier,diode,S4D20120A,S4D20120H

This 1200V/20A diode is high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S4D20120A/S4D20120H/S4D20120G SiC Power Schottky Rectifier are ideal for energy sensitive, high frequency applications in challenging environments.

Features

175℃ T_J operation

Ultra-low switching loss

Switching speeds independent of operating temperature

Low total conduction losses

High forward surge current capability

High package isolation voltage

Terminals finish: 100% Pure Tin

"-A" is an AEC-Q101 qualified device

Pb−Free Device

All SMC parts are traceable to the wafer lot

Additional electrical and life testing can be performed upon request

Applications

Alternative energy inverters

Power Factor Correction (PFC)

Free-Wheeling diodes

Switching supply output rectification

Reverse polarity protection

Maximum Ratings

Electrical Characteristics

* Pulse width<300µs, duty cycle<2%

Thermal-Mechanical Specifications

Ordering Information

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本文由Vicky转载自SMC News，原文标题为:S4D20120A S4D20120H S4D20120G 1200V SIC POWER SCHOTTKY RECTIFIERS Data Sheet，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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