500V/20A N-channel Enhanced mode TO-220F/TO-247 MOSFET SW20N50D for Charger, Adaptor and LED

2024-01-26 SEMIPOWER
MOSFET,SW20N50D,SW F 20N50D,SW T 20N50D MOSFET,SW20N50D,SW F 20N50D,SW T 20N50D MOSFET,SW20N50D,SW F 20N50D,SW T 20N50D MOSFET,SW20N50D,SW F 20N50D,SW T 20N50D

This power MOSFET SW20N50D is produced with advanced technology of SAMWIN. This technology enables the power MOSFET to have better characteristics, including fast switching time, low resistance, low gate charge, and especially excellent avalanche characteristics.



Features

High ruggedness

Low RDS(ON)(Typ 0.19Ω)@VGS=10V 

Low Gate Charge (Typ 82nC) 

Improved dv/dt Capability 

100% Avalanche Tested 


Application

Charger

Adaptor

LED


Absolute maximum ratings

Thermal characteristics

Order Codes

授权代理商:世强先进(深圳)科技股份有限公司
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本文由Vicky转载自SEMIPOWER,原文标题为:N-channel Enhanced mode TO-220F/TO-247 MOSFET,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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芯派科技(SEMIPOWER)Samwin® 功率器件选型指南(简版-英文)

目录- COMPANY INTRODUCTION    High/Low voltage MOSFET part numbering and Common device packages    LOW VOLTAGE MOSFET    HIGH VOLTAGE PLANAR MOSFET    HIGH VOLTAGE SUPER JUNCTION (SJ) MOSFET    IGBT/BRIDGE RECTIFIER/HIGH EFFICIENCY RECTIFIER DIODE    FAST RECOVERY DIODE    SCHOTTKY BARRIER DIODE    SAMWIN® Product APPLICATION   

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可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

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