SLKOR High-voltage MOSFET SL13N50FS with an On-resistance of 520mΩ@10V and a Continuous Drain Current of 13A
One of the important products of SLKOR is the High-voltage MOSFET SL13N50FS. The SL13N50FS is an N-channel MOSFET with a drain-source voltage of 500V, a continuous drain current of 13A, and a power handling capability of 50W. Additionally, it has an on-resistance of 520mΩ@10V, 6.5A, and exhibits fast switching characteristics under low current and low gate charge conditions. This makes the SL13N50FS perform exceptionally well in applications such as high-frequency switch-mode power supplies.
As a new material, silicon carbide has received much attention in the semiconductor field. Compared to traditional silicon materials, silicon carbide has higher voltage resistance, lower on-resistance, and better thermal characteristics. These advantages enable silicon carbide MOSFETs to operate stably in high-power, high-temperature, and high-frequency environments, providing more efficient and reliable performance. SLKOR SL13N50FS product is one of the representatives based on silicon carbide technology. Its excellent parameters and characteristics make it widely used in applications such as high-frequency switch-mode power supplies.
As an innovative semiconductor company, SLKOR not only focuses on improving product performance but also emphasizes the continuous development of technology. The company continuously invests in research and development resources to drive innovation and application of silicon carbide technology, to meet the growing market demand and diverse customer requirements. SL13N50FS, as a representative product, demonstrates outstanding performance in applications such as high-frequency switch-mode power supplies, thanks to its excellent parameters and characteristics. With the constant evolution of technology, SLKOR will continue to engage in research and development, bringing more innovation and breakthroughs to the semiconductor field.
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本文由三年不鸣转载自SLKOR News,原文标题为:【Daily Highlight】SLKOR High-voltage MOSFET SL13N50FS,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
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