Huaxuan Yang Electronics: Optimization and Performance Improvement of Power Devices Applied in PoE Communication Equipment

2024-01-31 HUA XUAN YANG ELECTRONIC News
MOS transistors,TVS transistors,rectifier bridges,MOSFET MOS transistors,TVS transistors,rectifier bridges,MOSFET MOS transistors,TVS transistors,rectifier bridges,MOSFET MOS transistors,TVS transistors,rectifier bridges,MOSFET

Optimization and performance improvement of power devices applied in PoE communication devices Over Ethernet (PoE) technology, as an important innovation, provides a convenient and efficient power supply for our devices. This article will focus on the key power devices in PoE communication devices, namely MOS transistors, TVS transistors, and rectifier bridges, and explore how they work together to achieve excellent performance and stable operation.



1. Selection and optimization of MOSFETsIn PoE devices, MOSFETs play an important role in regulating power switches. Reasonable selection and optimization of MOSFET driver circuits are crucial for overall performance. Firstly, we need to consider the conduction resistance, leakage current, and conduction loss of MOSFETs. By using MOSFETs with low resistance and low leakage current, power loss can be reduced and system efficiency can be improved. In addition, optimizing the driving circuit parameters appropriately, such as power supply voltage and pulse width, can also effectively improve the performance of MOSFETs.



2. The protective effect of TVS tubesThe Transient Voltage Suppressor (TVS) tube plays an important role in overvoltage protection in PoE equipment. In actual operation, devices may be affected by voltage surges or sudden noise from the network. By selecting the parameters and configuration of TVS tubes reasonably, the equipment can be protected from the damage of these sudden voltages. This is of great significance for improving the reliability of equipment and extending its service life.



3. Efficiency and stability of rectifier bridgesIn PoE devices, the rectifier bridge is responsible for converting AC power to DC power. To improve overall efficiency, we can optimize the bridge arm material and structure of the rectifier bridge to reduce conduction and switching losses. Meanwhile, designing the transition current and reverse recovery time of the rectifier bridge reasonably can help improve the stability and response speed of the equipment.



In PoE communication devices, the collaborative work between MOS transistors, TVS transistors, and rectifier bridges is crucial. Through reasonable matching and coordination, we can achieve the best power conversion effect, ensuring that the equipment can perform well under various working conditions. Meanwhile, by utilizing advanced manufacturing processes and materials, we can continuously improve the performance of these power devices, providing stronger support for the stability and reliability of the entire PoE system.


授权代理商:世强先进(深圳)科技股份有限公司
技术资料,数据手册,3D模型库,原理图,PCB封装文件,选型指南来源平台:世强硬创平台www.sekorm.com
现货商城,价格查询,交期查询,订货,现货采购,在线购买,样品申请渠道:世强硬创平台电子商城www.sekorm.com/supply/
概念,方案,设计,选型,BOM优化,FAE技术支持,样品,加工定制,测试,量产供应服务提供:世强硬创平台www.sekorm.com
集成电路,电子元件,电子材料,电气自动化,电机,仪器全品类供应:世强硬创平台www.sekorm.com
  • +1 赞 0
  • 收藏
  • 评论 0

本文由Vicky转载自HUA XUAN YANG ELECTRONIC News,原文标题为:Huaxuan Yang Electronics: Optimization and Performance Improvement of Power Devices Applied in PoE Communication Equipment,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

评论

   |   

提交评论

全部评论(0

暂无评论

相关推荐

华轩阳电子(MOSFET在微型光伏逆变器中的应用,能够有效降低光伏逆变器的功率损耗

在小功率应用中,如消费类电子产品、移动充电设备等,光伏逆变器不仅需要高效转换太阳能,还需要保持小巧轻便,以适应多样化的使用场景。在这一背景下,功率半导体分立器件MOSFET的选择变得至关重要。

应用方案    发布时间 : 2024-03-15

华轩阳电子PFC、充电MOSFET等产品用于UPS不间断电源解决方案,满足功率因数校正、整流、辅助供电和升压等多方需求

华轩阳电子是一家专业生产和销售各种功率器件的企业,我们拥有多年的研发经验和先进的生产工艺,我们的产品涵盖了PFC和充电MOSFET、整流用的快恢复二极管、辅助供电的线性稳压IC、以及升压MOSFET等,我们可以为您提供全套的功率器件解决方案,满足您在UPS不间断电源设计和开发中的各种需求。

应用方案    发布时间 : 2023-12-11

华轩阳电子推出的MOSFET功率半导体用于园林工具,具有高负载驱动、高效能耗管理等特性

近年来,随着消费类电子领域的飞速发展,无刷电机技术在园林工具中的应用越来越受到关注。在这个不断追求卓越性能的时代,功率半导体分立器件MOSFET正扮演着关键的角色,为园林工具的无刷电机控制器带来了坚固耐用的卓越表现。

应用方案    发布时间 : 2023-12-29

原装替代,降低50%器件成本,高性能MOSFET厂商华轩阳电子授权世强硬创代理

MOSFET的SGT芯片工艺使寄生电容值至少降低30%,开关速度、开关损耗等参数得到显著改善;而Clip封装工艺搭配着芯片减薄技术,将RDon降低至1mR以下。

签约新闻    发布时间 : 2023-07-26

数据手册  -  华轩阳电子  - 2023/7/27 PDF 英文 下载 查看更多版本

数据手册  -  华轩阳电子  - 2022/11/30 PDF 英文 下载 查看更多版本

数据手册  -  华轩阳电子  - 2023/8/17 PDF 英文 下载

数据手册  -  华轩阳电子  - 2023/11/23 PDF 英文 下载 查看更多版本

数据手册  -  华轩阳电子  - 2022/12/14 PDF 英文 下载

华轩阳电子(HUA XUAN YANG ELECTRON)MOSFET选型指南

目录- MOSFET绝佳时机    企业简介及成长过程    产品介绍    产品封装介绍    MOSFET产品选型表    SiC/GaN功率器件产品选型介绍    MOSFET产品应用举例    增值服务   

型号- HXY120P03P,HXY150N03P,HXY120P03T,HXY15P06D,HXY150N03T,HXY150N04D,HXYG110N06NF,HXY25G02DF,HXY13P10D,HXY7H03DF,HXY3N06AI,HXYJ40N65MP,HXYG80N10P,HXYG110N12T,HXY120P03D,HXYG80N10T,HXYG110N12P,HXY70N20MP,HXY30P03D,HXY80N06NF,HXY3400AI,HXY70P02D,HXY25N50MP,HXY15P04D,HXY3416MI,HXY60N03D,HXY2320MI,HXY30P04D,HXY50N06DF,HXY4953A,HXY1N10BI,HXY18N20D,HXY4409A,HXY13P20D,HXY8804DF,HXY70P03D,HXY60N04D,HXY2N60P,HXY50P04NF,HXY13P20P,HXY06506ID,HXYG110N10P,HXY10N40F,HXY60N03Y,HXY5N10S,HXY50N06CP,HXY150N03D,HXY2N60D,HXY10N40P,HXY2N60F,HXY18N20P,HXY8205A,HXYG110N10T,HXY4959A,HXY06506FD,HXY9N90P,HXY12010LD,HXY9N90F,HXY003N170SICMP,HXYG100N10NF,HXY10N65F,HXY12020HD,HXY30P10D,HXY8P04S,HXY10N65P,HXY40P10NF,HXY85N03NF,HXY18N50F,HXY120N04P,HXY4H03LI,HXY120N04T,HXYG180N10T,HXY2310MI,HXY30P12DF,HXYG180N10P,HXY18N50P,HXY030N120SICMP,HXY3N30H,HXYJ7N60D,HXY2N65P,HXY30N06D,HXYJ7N60F,HXY30P04NF,HXYJ7N60P,HXY2N65D,HXYG6ON10NF,HXY4957A,HXY2N65F,HXY5N04MI,HXY06508ID,HXY06506ED,HXY3407MI,HXY20N65P,HXY9435A,HXY12020LD,HXY5N10BI,HXY20N65F,HXYJ4N65P,HXY2311MI,HXYJ4N65D,HXYJ4N65F,HXY80N03NF,HXY3401AI,HXY20N06Y,HXY06508FD,HXY4N60P,HXY10G03DF,HXY4N60F,HXY20G06GD,HXY2302AI,HXY4N60D,HXY8N06S,HXY5G03DF,HXY10G03S,HXY100N065SICMP,HXY30N06DF,HXY80P06P,HXY100N10P,HXY15N04S,HXY20P02D,HXY12010HD,HXY80P06T,HXY2N100D,HXY10G04ES,HXY6V04S,HXY3N90F,HXY03N60I,HXY150P03P,HXYG30N10AD,HXY100P03NF,HXY10G04S,HXY150P03T,HXY2309MI,HXY10G04DF,HXY3412MI,HXY40P02DF,HXYO1P10I,HXY12010ID,HXY2N20MI,HXY120N04D,HXY016N65GANNF,HXY2303AI,HXY3N90P,HXY5N50D,HXY15N10D-L,HXY10P12DF,HXY06508ED,HXY5N06MI,HXY06506AD,HXY3401MI,HXY120N03NF,HXY50P03DF,HXY20N06D,HXY15H06NF,HXY15G04NF,HXY100N04D,HXYJ4N60P,HXY10H03S,HXY3415MI,HXYJ25N60F,HXY3H06S,HXY50P06T,HXYJ4N60F,HXYJ25N60P,HXY100N03T,HXY20G04GD,HXY30P06D,HXY20N15D,HXY20N03D,HXY34N20P,HXYJ4N60D,HXY100N03P,HXY3404MI,HXY100N03D,HXY5N20D,HXY15HO3NF,HXY20N03S,HXYJ7N65F,HXYG220N08P,HXYJ7N65D,HXYG20N06S,HXY12N65F,HXYG220N08T,HXY10G06NF,HXY50P06P,HXY20N04D,HXY4N65P,HXY20P02DF,HXY50P06D,HXYJ7N65P,HXY4N65D,HXY4407A,HXY3N06MI,HXY3205P,HXY4N65F,HXY2305BI,HXY12N65P,HXY100N06D,HXY10P02DF,HXY70P10D,HXY6N03SI,HXY5P04MI,HXY85N08BT,HXYG40N10D,HXY10G03GD,HXY4N10MI,HXY06510ND,HXY30P03DF,HXY2305AI,HXY5N30D,HXYG12N10D,HXY50N20MP,HXY10N60P,HXY100N04NF,HXY15N06S,HXY10N60F,HXY70P10T,HXYG40N10S,HXY70P10P,HXY85N08BP,HXY2N30MI,HXY10H06S,HXY06508AD,HXY20H06NF,HXY8806DF,HXY10G03ES,HXY55N10T,HXY90P03NF,HXY55N10F,HXY5G06S,HXYJ25N65F,HXY80N10NF,HXY80N03D,HXY65N06NF,HXY55N10P,HXYJ60N60MP,HXY9926A,HXY9P20D,HXY10N06S,HXY3N10BI,HXY100N06T,HXY12003ID,HXY9P20P,HXY135N03NF,HXY80N04D,HXY2334CI,HXY50N25MP,HXY100N06P,HXY35P06NF,HXYG100N08T,HXY70N10CP,HXY2305MI,HXY15G02DF,HXY06510ID,HXY50N06P,HXY3G02LI,HXY40N02D,HXY15V06NF,HXY15N65P,HXY8814A,HXY20G03GD,HXY3407AL,HXY2311BI,HXY80N05D,HXY15N65F,HXY2311AL,HXYG100N08P,HXY15G03ES,HXY12010AD,HXY70N04NF,HXYG60N10S,HXY100P03D,HXYG60N10P,HXY9928A,HXY6H04S,HXY8G10NF,HXYG60N10D,HXY3407AI,HXY80N06P,HXY80N06D,HXY17N25D,HXY50N06D,HXY20H04NF,HXY10P04D,HXY50P10T,HXY80N06T,HXY17020LD,HXY7N50D,HXY4N80P,HXY50P10P,HXY20G03NF,HXY70N03NF,HXY40N03S,HXY4N80F,HXY80N07P,HXY8808CF,HXY10H03DF,HXY2300AI,HXY15G04ES,HXY50N05D,HXY60N04DF,HXYG60N12T,HXY80N08D,HXYG60N12P,HXY60N06HP,HXY80N07T,HXY3400MI,HXY50P10D,HXY5N100F,HXY3P10MI,HXYG20N10D,HXY2301BI,HXY4435A,HXY50N04D,HXY220N04T,HXY12N60P,HXYG130N10P,HXY2307MI,HXY5N100P,HXY17040HD,HXYG130N10T,HXY3410MI,HXY20G04NF,HXY220N04P,HXY06510ED,HXY20N02DF,HXY20P03D,HXY8809CF,HXY2301AI,HXY12N60F,HXY50N15D,HXY50N03D,HXY8V04S,HXY8810A,HXY90N08T,HXYJ25N65P,HXY90N08P,HXY15N10Y,HXY7N65F,HXY7N65D,HXY25P06D,HXY13N50F,HXY06510FD,HXY15N10S,HXYJ30N65MP,HXY70N20P,HXY7N65P,HXY5N10SI,HXY13N50P,HXY15N10D,HXY80P04D,HXY2302BI,HXY220N04NF,HXY70N20T,HXY3P06AI,HXY20N50P,HXY50N06NF,HXY20N50F,HXY2300MI,HXY60P04D,HXY3415AI,HXYG130N08P,HXY5N10LI,HXYG130N08T,HXY25N15NF,HXYG120N10T,HXY15N60P,HXYG120N04NF,HXY4N15MI,HXY2312MI,HXYG120N10P,HXYJ30N60MP,HXY60P03D,HXY15N60F,HXYG170N1OT,HXY5N10MI,HXY12003AD,HXY18P20P,HXY3404AI,HXY60N02DF,HXY180N03P,HXY25N10S,HXY40N15NF,HXY06510AD,HXY20N60P,HXYG130N06NF,HXY20H06S,HXY70N03DF,HXY7N60D,HXY20N60F,HXY1N65H,HXY6G03LI,HXY7N60F,HXY25N10D,HXY180N03NF,HXYG40N10NF,HXY7N60P,HXY4P20P,HXY9N20D,HXY4P20D,HXY105N03D,HXY2313MI,HXY60N03DF,HXY007N65GANNF,HXY85N04NF,HXY3409MI,HXYG110N06D,HXYJ60N65MP,HXYG110N06P,HXYG170N10P,HXYJ40N60MP,HXY80N04DF,HXYG170N10T,HXYG180N04P,HXY50N10D,HXY80N10D,HXYG110N06T,HXYG180N04T,HXY30N15D,HXY6P04S,HXY180N03T,HXY3P04AI,HXY6H03S,HXY20H04S,HXY06506ND,HXY8205S,HXY9N50D,HXY06508SD,HXY8H04S,HXY35P10NF,HXY30N20D,HXY50P03NF,HXY2314MI,HXY6N80P,HXY110N15T,HXY110N15P,HXY10N15D,HXY80N03DF,HXY80N08NF,HXY110N04D,HXY60NO3NF,HXY6N80F,HXY12H02TS,HXY2N7002AI,HXYG130N06D,HXY110N03D,HXY8H06S,HXY3416AI,HXYG130N06P,HXY55N10CP,HXY2315MI,HXY6G03S,HXY80N02DF,HXY3N100D,HXY130N20MP,HXY160N04P,HXY70P03NF,HXY80N02D,HXY10N04S

选型指南  -  华轩阳电子  - 2020/11/20 PDF 中文 下载

数据手册  -  华轩阳电子  - 2023/7/27 PDF 英文 下载 查看更多版本

MOSFET and IGBT Working Principle and Structure

If the application is low voltage and high frequency, requiring fast switching and small switching losses, MOSFETs can be chosen. If the application is high voltage and low frequency and requires a smaller conduction resistance and greater resistance to breakdown, IGBT can be chosen.

技术探讨    发布时间 : 2023-10-01

【技术】MOSFET和IGBT区别及应用范围介绍

MOSFET和IGBT在不同的应用场合有着各自的优缺点。如果应用场合是低压高频的,需要快速开关和较小的开关损耗,可以选择MOSFET;如果应用场合是高压低频的,需要较小的导通电阻和较大的抗击穿能力,可以选择IGBT。

技术探讨    发布时间 : 2023-06-10

数据手册  -  华轩阳电子  - 2023/7/27 PDF 英文 下载 查看更多版本

数据手册  -  华轩阳电子  - 2024/1/12 PDF 英文 下载

展开更多

电子商城

查看更多

只看有货

品牌:华轩阳电子

品类:瞬态抑制二极管

价格:¥0.1036

现货: 0

品牌:华轩阳电子

品类:场效应管

价格:¥3.1177

现货: 0

品牌:里阳半导体

品类:TVS Diodes

价格:¥0.1340

现货: 918,000

品牌:硕凯电子

品类:Surface Mount Transient Voltage Suppressors

价格:¥0.2496

现货: 56,080

品牌:优恩半导体

品类:TVS

价格:¥0.2200

现货: 52,500

品牌:LITTELFUSE

品类:TVS Diodes

价格:¥0.4833

现货: 3,020

品牌:扬杰科技

品类:瞬态抑制二极管

价格:¥0.2570

现货: 2,400

品牌:鲁光电子

品类:TVS瞬态抑制二极管

价格:¥0.2500

现货: 100

品牌:蓝箭电子

品类:整流桥堆

价格:¥0.5125

现货: 100

品牌:ZHIDE

品类:瞬间电压抑制二极管

价格:¥0.2353

现货: 20

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

现货市场

查看更多

品牌:扬杰科技

品类:Mosfet

价格:¥1.0500

现货:500,000

品牌:捷捷微电

品类:MOSFET

价格:¥0.7000

现货:500,000

品牌:MCC

品类:MOSFET

价格:¥0.1627

现货:305,993

品牌:银河微电子

品类:P-Channel Enhancement Mode MOSFET

价格:¥0.1911

现货:274,418

品牌:TOSHIBA

品类:MOSFET

价格:¥0.2034

现货:251,269

品牌:MCC

品类:MOSFET管

价格:¥0.8600

现货:168,000

品牌:上海贝岭

品类:Trench MOSFET

价格:¥0.2000

现货:86,752

品牌:ONSEMI

品类:MOSFET

价格:¥1.0170

现货:82,790

品牌:ONSEMI

品类:绝缘栅场效应管

价格:¥2.5000

现货:57,000

品牌:NCE

品类:MOSFET

价格:¥1.0100

现货:55,183

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

服务

查看更多

高热流密度液冷板定制

定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。

最小起订量: 1片 提交需求>

功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

实验室地址: 西安 提交需求>

世强和原厂的技术专家将在一个工作日内解答,帮助您快速完成研发及采购。
我要提问

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

研发客服
商务客服
服务热线

联系我们

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

投诉与建议

E-mail:claim@sekorm.com

商务合作

E-mail:contact@sekorm.com

收藏
收藏当前页面