Excellent Power MOSFET SL90N03R Built with Advanced Trench Technology
The SL90N03R is a low-voltage MOSFET produced by SAKO Micro. As an excellent performance Power MOSFET, the SL90N03R is manufactured using advanced TRENCH technology. This technology is specially customized to minimize conduction losses, provide excellent switching performance, and withstand high-energy pulses in avalanche and commutation modes. Let's take a closer look at this outstanding product.
Firstly, the SL90N03R features an extremely low on-resistance (RDS(ON)). At 10V and 30A, its on-resistance is only 4.2mΩ. This means that the SL90N03R can achieve higher efficiency and lower energy losses, providing users with more reliable power output. Additionally, the SL90N03R also possesses fast switching characteristics, making it perform exceptionally well in applications such as pulse-width modulation, load switches, and energy management.
Secondly, the SL90N03R has undergone 100% avalanche testing. This testing method involves subjecting the device to high-voltage testing to verify its reliability and stability under high load conditions. Through this rigorous testing, the SL90N03R has demonstrated its reliability under harsh operating conditions, allowing users to confidently apply it in various high-voltage applications. In addition, the SL90N03R also features improved dv/dt functionality. This function is designed to reduce the voltage and current spikes that occur during the switching process, ensuring stability and reliability. In practical applications, this function can effectively reduce electromagnetic interference and noise, improving the system's anti-interference ability and reliability.
The SL90N03R can also be applied in areas such as pulse-width modulation, load switches, and energy management, providing users with efficient and reliable solutions. For example, in pulse-width modulation applications, the SL90N03R can be used as a switch to control the load current. Its fast switching characteristics ensure accurate control of the load current, while its extremely low on-resistance enables higher efficiency and lower energy losses.
In summary, the SL90N03R is an excellent power MOSFET built with advanced TRENCH technology. It features extremely low on-resistance (RDS(ON)), fast switching, 100% avalanche testing, and improved dv/dt functionality. It has a wide range of applications, including pulse-width modulation, load switches, and energy management, providing users with efficient and reliable solutions. With the continuous development of technology, the SL90N03R will continue to demonstrate its outstanding performance and reliability in future market competition.
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本文由三年不鸣转载自SLKOR News，原文标题为:【Daily Highlight】Excellent Power MOSFET SL90N03R Built with Advanced Trench Technology，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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