Efficient Low Voltage MOSFET SL120N03R with a Vdss of 30V, a continuous drain current (Id) of 120A

The Ministry of Industry and Information Technology (MIIT) has released the "2023 Statistical Report on the Telecommunications Industry," which reveals significant achievements made by the Chinese telecommunications industry in the past year. According to the data released by MIIT, the cumulative revenue from telecommunications services in 2023 reached 1.68 trillion yuan, with a year-on-year growth of 6.2%. Moreover, when calculated at the previous year's prices, the total volume of telecommunications services increased by 16.8% year-on-year. These numbers indicate the thriving development and enormous potential of the Chinese telecommunications industry.

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The report highlights that by the end of 2023, the industry had developed a total of 31,600 5G virtual private networks (VPNs), which is 2.2 times the number at the end of the previous year. With the continuous maturity of 5G technology and the expansion of its application scope, 5G industry applications have evolved from pilot projects to scaled replication in specific fields. The number of 5G application cases has exceeded 94,000, and this trend will further promote the digital transformation of China's industries.

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In this process, SLKOR, as an important participant in the semiconductor industry, is driving global development through its technological innovations and products. Their high-end products such as silicon carbide (SiC) diodes, SiC MOSFETs, IGBTs, and fifth-generation ultra-fast recovery power diodes have been widely applied in 5G applications. SLKOR's continuous innovation and product advantages will also make a positive contribution to the progress of the Chinese telecommunications industry and the development of 5G technology.

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SL120N03R is a low-voltage MOSFET produced by SLKOR Semiconductor Company. It is manufactured using advanced Trench technology, providing users with excellent gate charge and on-resistance (RDSon), thereby reducing communication and conduction losses. Therefore, this device is very suitable for AC/DC power conversion, load switching, and industrial power applications.

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The parameters of the SL120N03R include being an N-channel type, with a drain-source voltage (Vdss) of 30V, a continuous drain current (Id) of 120A, an on-resistance (RDS(on)@Vgs, Id) of 1.15mΩ@10V, 20A, a threshold voltage (Vgs(th)@Id) of 1.5V@250μA, and it is packaged in a PDFN5x6-8L. These parameters contribute to the outstanding performance of the SL120N03R.

In addition, the SL120N03R Low Voltage MOSFET has many other features. It has undergone 100% avalanche testing and has low FOM RDS(on)xQgd characteristics. FOM (Figure of Merit) is an indicator that balances power consumption and performance, while RDS(on)xQgd represents the product of on-resistance and gate charge. The SL120N03R achieves an extremely low level in this regard, making it an excellent performer in high-efficiency energy conversion and load-switching applications. Its low FOM characteristic enables the MOSFET to achieve higher efficiency and lower energy loss, providing users with more reliable power output. Additionally, it is manufactured using advanced Trench technology, which makes the device structure more compact, smaller in size, and easier to install and wire. The SL120N03R also complies with RoHS standards, which means it has made a positive contribution to environmental protection. RoHS standards limit the use of hazardous substances, protecting the environment and human health. As a product that meets RoHS standards, it can not only meet the needs of users but also contribute to sustainable development.

Finally, the SL120N03R has a very wide range of applications. It can be used in energy management, pulse width modulation applications, load switching, and other fields. Whether it is industrial production or personal use, the SL120N03R can provide users with stable and efficient power output, assuring the operation of various electrical equipment.

In summary, the SL120N03R is an excellent performance and widely applicable low-voltage MOSFET product with outstanding features and functions. It is highly appreciated by users and has broad development prospects in future market competition.