Is It Always Difficult to Use and Replace MOS Tubes for Multimeter Tests?
MOS tube has always been one of the topics that engineers are keen to discuss, so we have sorted out the common and uncommon knowledge of MOS tube, hoping to be of some help to engineers. Now let's talk about the MOS tube, a very important component.
Antistatic protectionAlthough the MOS tube has internal protection measures, we should also operate by the anti-static operation rules, which qualified maintenance personnel should have.
While recently enhanced power MOS tube has a larger difference, the first input capacitance is big because of its high function, this one comes into contact with the electrostatic charging process, and the resulting voltage is small, causing breakdown may be small, moreover, the power MOS tube inside the gate and the source has the protection of voltage regulator tube DZ (as shown in the figure below), the static embedded below the protection zener diode voltage value, effective protection of the grid and the source of the insulating layer, different power, different models of MOS tube, its protection zener diode voltage values are different.
Most MOS tubes produced in the early stage have no anti-static measures, so care should be taken in storage and application, especially MOS tubes with small power. As the input capacitance of MOS tubes with small power is relatively small, the voltage generated when they come into contact with static electricity is relatively high, which is likely to cause static electricity breakdown.
MOS tube is an insulated gate field effect tube, the gate is a DC-free path, the input impedance is very high, easy to cause electrostatic charge accumulation, and produces a high voltage to break down the insulation layer between the gate and the source.
Fig.1
Detection and substitution
In the repair of television and electrical equipment, there will be a variety of components the damaged, MOS tube is one of them, this is how our maintenance personnel use the commonly used multimeter to judge the quality of MOS tube, the pros and cons. How to replace the MOS tube if there is no manufacturer or the same model when replacing it?
1. MOS tube test: Pointer multimeters (digital meters are not suitable for measuring semiconductor devices) must be used for testing. The type for power MOSFET switch tube is N channel enhanced, every manufacturer of products is also almost the same the TO - 220 - f package form (used in switching power supply for 50-200 w power field effect of the switch tube), the three electrodes arrangement is consistent, the three pins down, print model for the third, on the left side of the pin gate, right pin measurement for the source, the middle pins TO drain as shown in the figure below.
General Electric TV maintenance personnel when measuring transistors or diodes generally adopt ordinary multimeter to judge the stand or fall of the transistor or the diode, although the electrical parameters of the transistor or the diode judged can not be confirmed, as long as the method to confirm the correct transistor "good" and "bad" or there is no problem. Similarly, THE MOS tube can also be used to judge its "good" and "bad" by a multimeter, which can also meet the requirements for general maintenance.
Fig.2
1) Multimeter and related preparation: With the multimeter ohm center scale cannot be too big, less than 12 best Ω (500 type table for 12 Ω) so that in R x 1 block can have larger current, more accurate for positive characteristics of PN junction judgment. The battery inside the R×10K block of the multimeter should be greater than 9V so that it is more accurate when measuring the reverse leakage current of the PN junction, otherwise, the leakage cannot be measured.
First of all, before measurement, you should use a multimeter, especially the application of ohmic gear. To understand the ohmic gear, you can correctly use the ohmic gear to measure the transistor and MOS tube.
Fig.3
Now due to the progress of production technology, factory screening and detection are very strict, we generally judge as long as the MOS tube is not leakage, has no breakdown short circuit, an internal continuous circuit, and can be enlarged, the method is very simple:
Adopt the R×10K gear of the multimeter; The battery inside the R×10K gear is usually 9V plus 1.5V to reach 10.5V, and the voltage is generally judged to be sufficient for reverse phase leakage at the PN node. The red marker pen of the multimeter has negative potential (connected to the negative pole of the internal battery), and the black marker pen of the multimeter has positive potential (connected to the positive pole of the internal battery), as shown in the figure above.
2) Test steps: Connect the red watch pen to the source S of the MOS tube; Connect the black watch pen to the drain D of the MOS tube, and the indicator of the watch hand should be infinite, as shown in the figure below. If there is an ohm index, the tube under test has a leakage phenomenon, and the tube cannot be used.
Fig.4
Maintain the above state; At this point, a 100K ~ 200K resistor is connected to the gate and drain, as shown in the figure below; Whose hands indicates ohms should be as small as possible, then can general instructions to 0 ohm, at this moment is positively charged by 100 k resistor grid charging of MOS tube, produce grid electric field, because the electric field to produce conductive channel drain and source conduction, so the multimeter pointer deflection, deflection Angle is large (small) ohm index prove good discharge performance.
Fig.5
A wire is used to connect the gate and source of the tube under test, and the pointer of the multimeter immediately returns to infinity, as shown in the figure above. The connection of the conductor makes the measured MOS tube, the gate charge release, and the internal electric field disappear. The conduction channel also disappears, so the resistance between the drain and the source becomes infinite again.
Fig.6
2. Replacement of MOS tube
In the repair of television and various electrical equipment, encountered components damage should be replaced with the same type of components. Sometimes don't have the same component, however, with other types of substitution, so consider all aspects of the performance, parameters, and overall dimensions, such as the inside of the television line output tube, as long as thinking of high voltage, current, power is generally can be substitution (line output tube appearance is almost the same size), and more power tend to be larger.
Although it is the same principle for MOS tube substitution, it is better to choose the original model. In particular, the power should not be higher because of the high power. Changed after the input capacitance is big, and the driver circuit mismatch, incentive perfusion charging current limiting resistor of resistance of the circuit and the size of the input capacitance is connected, MOS tube with large power despite the large capacity, but the input capacitance is large, the driver circuit with not good, it can make the MOS tube, the bad performance. As shown in the substitution of different types of MOS tubes, its input capacitance should be taken into account.
For example, have a 42 inch LCD TV backlight high pressure plate is damaged, check if the internal power MOS tube is damaged because without the original type of substitution, is to choose a voltage, current and power are not less than the original MOS tube replacement, the result is a backlight tube continuous flashing difficult (start), finally put on the original model to solve the problem.
When the MOS tube is detected to be damaged, the components of the surrounding perfusion circuit must be replaced completely, because the damage of the MOS tube may also be caused by the poor perfusion circuit components. Even if the MOS tube itself is damaged, at the moment of breakdown of the MOS tube, the perfusion circuit elements are also damaged and should be replaced.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由三年不鸣转载自HI-SEMICON News,原文标题为:Is it always difficult to use and replace MOS tubes for multimeter tests?,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
MOS Switch Tube Selection and Principle Application
When the input voltage UI changes from high to low and the MOS tube changes from the on-off state to the cut-off state, the power UDD charges the stray capacitance CL via RD, charging time constant 1=RDCL, so the output voltage UO must pass a certain delay to change from the low level to the high level.
Why are MOS tubes broken down by static electricity,and what should we do about it?
MOS tube a ESD sensitive devices, its input resistance is very high, and the gate electrode capacitance is very small, so vulnerable to external electromagnetic or electrostatic induction and charged (a small amount of charge on the interelectrode capacitance can form a very high voltage (think U = Q/C) will be pipe damage, and because of the strong electrostatic situation difficult to charge and discharge to electrostatic breakdown.
Explain in Detail the Cause of MOS Tube Heating
For power supply design or driving circuit, it is inevitable to use field effect tube, which is often called MOS tube. There are many kinds of MOS tubes and they have many functions. To do the use of power or drive, of course, is to use its switching action.Regardless of N type or P type MOS tube, the operating principle is essentially the same. MOS transistors control the drain current at the output end by applying voltage to the gate at the input end. MOS tube is a voltage control device.
Hardware Necessary Skills, MOS Tube Composed of Basic Gate Logic Circuit
As a hardware engineer, you can‘t help but understand chips. In order to understand the chip, the basic logic circuits composed of MOS tubes must be memorized so as to be able to understand the chip block diagram more proficiently. The field-effect Transistor provides a variety of gate circuits that can be visualized in a variety of combinations or visuals that, as the description in the beginning, may be the basis of a modern IC.
MOS Tube Drive Circuit Summary - Detailed Design of Various Switching Power Supply MOS Tube Drive Circuit
When using MOS tube drive circuit to design switch power supply or motor drive circuit, most people will consider MOS conduction resistance, maximum voltage, maximum current, etc., and many people only consider these factors. Such circuits may work, but they are not excellent and are not allowed as a formal product design.
Solve the mystery of MOS tube damage
Failure occurs when a breakdown voltage, V(BR)DSS (depending on the breakdown current), is applied between the drain and source electrodes beyond the rated VDSS of the device and a certain amount of energy. Avalanche failure can be caused by a back sweep voltage generated when a dielectric-loaded switch is running off, or by a mode in which the peak voltage generated by the leakage inductance exceeds the power MOSFET‘s drain-rated withstand voltage and enters the breakdown zone.
Analysis of Classic MOS Tube Drive Circuit
MOS tubes are widely used in circuits we are familiar with, such as switching power supply, electric motor, lighting dimming and other driving circuits. In this application, we generally use low-voltage MOS tubes. The high-voltage MOS tube is corresponding to the low-voltage MOS tube. The classification of these two MOS tubes is based on voltage.
How to Judge the Working State of MOS Tube?
There are two working states of MOS tubes: enhanced and exhausted, divided into N channel and P channel. The MOS tube is the metal, oxide, and semiconductor field effect transistor, or the metal-insulator and semiconductor. This article we share how to judge the working state of a MOS tube.
HI-SEMICON(深鸿盛)MOSFET/SiC肖特基二极管/SiC MOSFET选型指南
目录- 公司简介 MOSFET Product Introduction VDMOS 超结MOSFET 中低压MOSFET 碳化硅肖特基二极管 碳化硅MOS MOSFET/SiC肖特基二极管封装
型号- SCF60R190C,SFD3006T,SFD6003T,SGP104R5T,SFS0406T4,SFM6005DT,SFD7N70,SFW90N25,SFQ0320T4,SFD18N20,SFM4009T,SFE6001T2,SFM6004T5,SFK2N50,SFF60N06,SFN4006T5,SFM0420T4,SFP10003PT,SFF18N20,SCF65R190TF,SFD2N50,SFM4004PT,SFS6003PT,SFP33N10,SFS4010T,SGS6001T4,SGP6008T,SFS3401,SFQ0318T4,SC3D40120D,SFS3400,SFK1N65,SCD65R960C,SFS4010T2,SFF5N80,SFS0407T4,SFS3407,SFD6005T,SFD10003PT,SFD7N50,SFM6005ST,SFF18N50,SFP40P10,SGS15HR430T,SFA10015T,SFP50N06,SCF65R640C,SFD3003T,SFQ0322T4,SFF12N65,SFD6006T,SGD105R5T,SFP11P20,SFD6N70,SFS6007T,SGM10HR14T,SCF65R380C6,SFS3400.A,SFS3001T2,SCD70R600C,SFQ0420T4,SCF60R580C,SGXXXXXPT,SGM062R3T,SFS4525T,SFD3004T5,SFS3401A,SGM066R5T,SFN3009T,SGM031R7T,SFB11N90,SCD70R900C,SFU3006T,SFP9N20,SFA110P06,SFR0305T2,SFF50N06,SFD6007T,SCD80R500S,SC3D08065G,SCF65R380C,SFD4006T,SC3D08065I,SFN0315T4,SFN3003PT,SFA6005T,SFS4008T2,SFS2300,SGP157R5T,SFS2301,SFM10015T,SFH8402DW,SC3D04065E,SCU70R900C,SCF60R280C,SFS2304,SFS2303,SFF13N50,SFS2305,SC3D04065I,SFF7N50,SCF65R540T,SFD50N06,SFP20007,SFU18N20,SGP104R0T,SCD65R1K2C,SFN0330T2,SFD6008T,SGM107R7T,SC3D04065A,SFM4010T,SFF20N50,SC3D20065D,SFP40N20,SFS0307T4,SFD3012T,SFF7N65,SCD60R580C,SFU5N20,SC3D10065A,SGM105R0T,SCF65R310C,SCF60R360C6,SFS0405T4,SC3D10065G,SC3D10065I,SFP6P10,SFM4005DT,SC3K080120,SCK65R1K15C,SFW50N25,SFU4N65,SFN0413T4,SFD5N65,SFP30P10,SFM10003PT,SC3D08065A,SFP18P10,SFD4N90,SFF7N70,SCF60R125C,SFXXXXXPTX,SFD4006PT,SFD4003T,SCF70R600C,SFF6005T,SFS0306T4,SCF80R950C,SGA104R0T,SFD3010T,SFE3007T,SFD5N50,SFP3006T,SFP3018T,SFP18N20,SGP103R0T,SCW65R075CF,SCF65R170C,SFS6012T2,SGD6008T,SGM041R8T,SFD4001PT4,SFD4001PT5,SFF8N65,SFN3006PT,SC3K040120,SGM6008T,SFD4N70,SCW60R030CF,SFB50N25,SCW65R041CF,SFP6005T,SFS2013PT,SCF70R420C,SCW65R090C,SGM031R1T,SCD70R420C,SC3K075120,SFD33N10,SCW65R099TF,SFP5P03,SCF60R160C,SFR0206T2,SFD4N65,SC3D15120H,SFS2N7002,SFF33N10,SCF70R360C6,SFD2008T,SFN3003T,SFS2302B,SGM109R5T,SFM6008T,SFD3006PT,SFD6003PT,SGA104R5T,SFF20N65,SFK4N65,SFB90N25,SFD5N20,SFR0205PT2,SGM030R7T,SFF8N80,SC3D30065D,SFN3002T,SFU9N20,SFD7N65E,SFD9N65,SFD4004PT,SFF20N70,SGM042R4T,SFP6007T,SFS3401B,SFS4435,SFU6003T,SGU6008T,SFM0430T2,SFF10N70,SCF60R360C,SFD2006T,SC3D06065E,SC3D06065G,SFP75P55,SC3D10120H,SFF3N80,SC3D06065A,SCD70R600C6,SCD65R380C,SFD14N25,SC3K015120,SFSAP4580,SFS6010T2,SCD65R540T,SGP105R5T,SFF4N65,SFF10N65,SC3D30120H,SFM0320T4,SC3D30120D,SC3D16065A,SC3D16065D,SC3D16065G,SFP27P20,SC3K050120,SFU6005T,SFW10P04,SFD3N50,SFF4N70,SFM10008T,SFF9N90,SCXXXXXXXXFX,SFD2003T,SFN0318T2,SFD3009T,SFM3011T,SFD6005PT,SC3K032120,SFP110N55,SFF16N65,SC3D12065A,SFF10N80,SFF5N50,SC3D12065G,SGD10HR20T,SC3D12065I,SC3D20120H,SFP59N10,SFN6004T5,SXXXXXXX,SFD9N20,SCF65R240C,SC3D06065I,SCD65R640C,SFS2012PT,SGA105R5T,SFN0250T2,SFM3012T,SC3D20120D,SGM041R3T
HI-SEMICON MOSFET在园林工具上的应用,具有优秀Rdson和EAS性能,较低FOM值
园林工具市场正经历锂电化趋势,其中无刷电机技术受到重视,MOSFET在其中扮演关键角色。深鸿盛电子提供适合园林工具的中低压MOS产品,具有优秀的性能和多种封装选择,满足不同电池供电和电机负载需求。
HI-SEMICON(深鸿盛)场效应管(MOSFET)选型表
目录- 中低压功率MOSFETs 高压功率MOSFETs 超结MOSFETs
型号- SFU6007T,SFP20N65,SCF60R190C,SFD3006T,SFD6003T,SGP104R5T,SFF10N65R,SFD7N70,SFF4N60E,SFQ0320T4,SFM4009T,SFE6001T2,SFP20N60,SFK2N50,SFF60N06,SFM041R8T,SFD60N06,SFD2N50,SFP4N65,SFP33N10,SFP4N65E,SCP60R190C,SFP20N70,SFS3401,SFD4N60E,SFS3400,SFD6005T,SFD7N65E-Y,SFD7N50,SFM6005ST,SFF18N50,SCA60R280C,SFM4N65,SFD1N65,SCP70R360C6,SFD3015T,SGA855R0T,SFP50N06,SCA65R540T,SCF65R640C,SFQ0322T4,SFU4N65E,SFF12N65,SFD6006T,SFD6N70,SGM10HR14T,SFQ0420T4,SGM062R3T,SFS4525T,SFD3N50-P,SFN3009T,SCD60R360C,SFF6N70,SFU3006T,SCF65R1K15C,SFP9N20,SFF50N06,SFD6007T,SFF3N50-P,SFP10N60,SCF65R380C,SFP7N65E-Y,SCP65R380C,SCP60R280C,SFS4008T2,SFS2300,SFF7N65-Y,SCF60R280C,SFF13N50,SFF7N50,SCF65R540T,SFD50N06,SFP10N70,SCD65R1K2C,SFM4010T,SFD3N50TS,SFF6007T,SCF80R500C,SCD80R500C,SFF2N50,SFD3012T,SFA3018T,SFF7N65,SCF65R310C,SFF7N65E-Y,SCD70R360C6,SFF6006T,SCK65R1K15C,SFD4N65E,SFF15N10,SFU4N65,SFF7N70,SFD4003T,SFU9N65,SFF6005T,SFD7N65-Y,SCP60R160C,SCA60R190C,SCF80R950C,SFK3N50,SCF55R2K7C,SFF12N65-Y,SFE3007T,SFP3006T,SFD5N50,SGM6005DT,SFF9N20,SGF15N10,SFP60N06,SFS2N10,SCF70R600C6,SFD4001PT5,SFP10N65-Y,SFF3N50,SFM4N65E,SCD65R125C,SCF65R125C,SFD4N70,SFP7N65-Y,SFF5N50TS,SFP6005T,SCP65R125C,SGM031R1T,SCF70R420C,SCD70R420C,SFP12N65-Y,SCP65R540T,SCF60R160C,SFD4N65,SFS2N7002,SFF3N50TS,SFF33N10,SCF70R360C6,SFS2302B,SFS2301B,SFD15N10,SFF20N60,SFD6003PT,SGA104R5T,SFF20N65,SFS4606T,SFU4003T,SGD15N10,SFF9N50,SFD10N65-J,SFF4N65E,SFD4004PT,SFD9N65,SFF20N70,SFU10N65R,SCD55R2K7C,SFU6003T,SFF10N70,SCF60R360C,SFD2006T,SFF9N65,SFP13N50,SCD70R600C6,SFU7N70,SCD65R380C,SFD5N50TS,SFAP4580,SFF10N60,SCD65R540T,SCP60R360C,SFF4N65,SFM0320T4,SCF65R1K2C,SCP80R500C,SGP855R0T,SFU6005T,SFD10N65R,SFD3N50,SFP12N65,SFU6N70,SFU4N60E,SFF4N70,SFF10N65-Y,SFF9N90,SGU15N10,SFM3011T,SFF16N65,SFP110N55,SFU6006T,SFP18N50,SFU15N10,SFF5N50,SFF10N65-J,SFN6004T5,SFP59N10,SFD9N20,SCF65R240C,SCD65R640C,SFM3012T,SFS5N10S,SFN0250T2,SCD65R1K15C
HI-SEMICON 产品电机行业分享
型号- SGX10HR10T,SGM066R5T,SGM105R0T,SFN3009T,SGM031R7T,SGP104R5T,SFN3003T,MUR1660T,SGM109R5T,SFN3002PT,SFN3003PT,SFD6003PT,SGM041R8T,SFP6008T,SCX65R380C,SFD6005PT,SGM042R1T,SFN4006T5,SGP105R5T,SCF65R640C,MUR1560T,SCF65R540T,SGM107R7T,SC3D08060A,SFS4010T,SGM031R1T,SFDP12N65,SCF65R240C,SFN4009T,SFM3012T,SGM041R3T
Repair, replacement and maintenance of Aluminum electrolytic capacitor that used in electrical equipment.
Please contact the manufacturer of the electrical equipment.
HI-SEMICON 产品储能行业分享
型号- SCF60R190C,SGM066R5T,SFF16N50,SFP9N20,SFF50N06,SFP3018T,SC3D06065A,SGP103R0T,SFP18N20,SCF65R170C,HGN042N10A,SGM042R1T,XNP40N60TH,SCF65R190TF,SFF13N50,IXFH22N65,SCW65R090CF,SGM6008T,SGM105R5T,SGS10HR11T,SGM107R7T,SFP6005T,SFM4010T,SCW65R090C,SC3D20065A,SFF20N50,MUR1660CT,SCW65R099TF,SCP65R090CF,SCF60R160C,SC3D10065A,SGM105R0T,SFF33N10,SGP105R0T,SFM10008T,SGM109R5T,SFM6008T,SFM6005ST,SFF18N50,MUR1560G,SFF20N65,SFP110N55,SFF16N65,SFP50N06,SC3D08065A,SC3D12065I,SCF60R125C,SFP59N10,SGM10HR14T,SC3D06065I,SCF65R240C,SGM042R4T,SFP6007T
电子商城
服务
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。
最小起订量: 1片 提交需求>
登录 | 立即注册
提交评论