30V N-Channel MOSFETs VM3008 Using Trench DMOS Technology to Minimize On-state Resistance and Provide Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM3008 using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
N-Channel MOSFETs VM3008 Features
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
MB/VGA/Vcore
POL Buck Applications
SMPS 2nd SR
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Thermal Characteristics
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