30V N-Channel MOSFETs VM3008 Using Trench DMOS Technology to Minimize On-state Resistance and Provide Superior Switching Performance

时间： 2024-02-07 来源：Viva

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N-Channel MOSFETs,N-Channel enhancement mode power field effect transistors,VM3008,昱盛电子

These N-Channel enhancement mode power field effect transistors VM3008 using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

N-Channel MOSFETs VM3008 Features

Improved dv/dt capability

Fast switching

100% EAS Guaranteed

Green Device Available

Applications

MB/VGA/Vcore

POL Buck Applications

SMPS 2^nd SR

Absolute Maximum Ratings Tc=25℃ unless otherwise noted

Thermal Characteristics

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昱盛电子提供以下参数的MOSFET选型， MaxVth：1~4V，Ciss：72.9~6500pF，Coss：18.3~4100pF，Crss：2.2~370pF

产品型号	品类	V(BR)DSS (V) Min.	VGS (±V) Max.	Vth (V) Max.	RDS(ON) (mΩ) Max.@VGS=10V	RDS(ON) (mΩ) Max.@VGS=4.5V	Ciss (pF) Typ.	Coss (pF) Typ.	Crss (pF) Typ.	ID (A)@25℃ Max.	PD (W)@25℃ Max.
VM2001	N-Channel MOSFETs	-20	10	1		8.3	3300	420	370	55	51