1200V/21A N-Channel Enhancement Mode SiC Power MOSFET S2M0120120D with Very Low Total Conduction Losses and Very Stable Switching Characteristics

时间： 2024-02-20 来源：SMC

技术问答

S2M0120120D is a single SiC Power MOSFET packaged in TO-247AD case. The device is a high voltage n-channel enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S2M0120120D N-Channel Enhancement Mode SiC Power MOSFET is ideal for energy sensitive, high frequency applications in challenging environments.

Features

Positive temperature characteristics, easy-to-parallel

Low on-resistance Typ. R_DS(on)=133mΩ

Fast switching speed and low switching losses

Very fast and robust intrinsic body diode

Process of non-bright Tin electroplating

Applications

EV Fast Charging Modules

EV On Board Chargers

Solar Inverters

Online UPS/Industrial UPS

SMPS (Switch Mode Power Supplies)

DC-DC Converters

ESS (Energy Storage Systems)

Maximum Ratings(T=25℃ unless otherwise specified)

Electrical Characteristics(T=25℃ unless otherwise specified)

Reverse Diode Characteristics:

Thermal-Mechanical Specifications:

Ordering Information:

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