1200V/21A N-Channel Enhancement Mode SiC Power MOSFET S2M0120120D with Very Low Total Conduction Losses and Very Stable Switching Characteristics
S2M0120120D is a single SiC Power MOSFET packaged in TO-247AD case. The device is a high voltage n-channel enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S2M0120120D N-Channel Enhancement Mode SiC Power MOSFET is ideal for energy sensitive, high frequency applications in challenging environments.
Features
Positive temperature characteristics, easy-to-parallel
Low on-resistance Typ. RDS(on)=133mΩ
Fast switching speed and low switching losses
Very fast and robust intrinsic body diode
Process of non-bright Tin electroplating
Applications
EV Fast Charging Modules
EV On Board Chargers
Solar Inverters
Online UPS/Industrial UPS
SMPS (Switch Mode Power Supplies)
DC-DC Converters
ESS (Energy Storage Systems)
Maximum Ratings(T=25℃ unless otherwise specified)
Electrical Characteristics(T=25℃ unless otherwise specified)
Reverse Diode Characteristics:
Thermal-Mechanical Specifications:
Ordering Information:
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本文由Vicky转载自SMC，原文标题为:S2M0120120D 1200V SIC POWER MOSFET Data Sheet，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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服务
可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
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