1200V/21A N-Channel Enhancement Mode SiC Power MOSFET S2M0120120D with Very Low Total Conduction Losses and Very Stable Switching Characteristics
S2M0120120D is a single SiC Power MOSFET packaged in TO-247AD case. The device is a high voltage n-channel enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S2M0120120D N-Channel Enhancement Mode SiC Power MOSFET is ideal for energy sensitive, high frequency applications in challenging environments.
Features
Positive temperature characteristics, easy-to-parallel
Low on-resistance Typ. RDS(on)=133mΩ
Fast switching speed and low switching losses
Very fast and robust intrinsic body diode
Process of non-bright Tin electroplating
Applications
EV Fast Charging Modules
EV On Board Chargers
Solar Inverters
Online UPS/Industrial UPS
SMPS (Switch Mode Power Supplies)
DC-DC Converters
ESS (Energy Storage Systems)
Maximum Ratings(T=25℃ unless otherwise specified)
Electrical Characteristics(T=25℃ unless otherwise specified)
Reverse Diode Characteristics:
Thermal-Mechanical Specifications:
Ordering Information:
- |
- +1 赞 0
- 收藏
- 评论 0
本文由Vicky转载自SMC，原文标题为:S2M0120120D 1200V SIC POWER MOSFET Data Sheet，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
相关推荐
1200V/140A SiC Power MOSFET S2M0016120K-1 with Very Low Total Conduction Losses and Very Stable Switching Characteristics Over Temperature Extremes
S2M0016120K-1 is single SiC Power MOSFET packaged in TO-247-4 case. The device is a high voltage n-channel enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S2M0016120K-1 is ideal for energy sensitive, high frequency applications in challenging environments.
SMC’s 1200V SiC Power MOSFET S2M0025120K is Selected in Everything PE‘s Top MOSFETs in 2023
SMC Diode Solution’s 1200 V SiC Power MOSFET, S2M0025120K, has been selected as one of everything PE‘s top MOSFETs in 2023. S2M0025120K is designed for energy-sensitive, high-frequency applications in challenging environments.
SMC Releases S2M0025120K 1200V SiC MOSFET Optimized for Power Fast Switching Applications
SMC releases the S2M0025120K series which is the new generation 1200V voltage platform SiC MOSFETs family. The device is a high voltage n-channel enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes.
电子商城
服务
可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
实验室地址： 西安 提交需求>
世强深圳实验室提供Robei EDA软件免费使用服务，与VCS、NC-Verilog、Modelsim等EDA工具无缝衔接，将IC设计高度抽象化，并精简到三个基本元素:模块、引脚、连接线，自动生成代码。点击预约，支持到场/视频直播使用，资深专家全程指导。
实验室地址： 深圳 提交需求>
授权代理品牌：集成电路
授权代理品牌：分立元件
授权代理品牌：接插件及结构件
授权代理品牌：部件、组件及配件
授权代理品牌：电源及模块
授权代理品牌：电子材料
授权代理品牌：仪器仪表及测试配组件
授权代理品牌：电工工具及材料
授权代理品牌：机械电子元件
授权代理品牌：加工与定制
我要提问
登录 | 立即注册
提交评论