150V/180A N-Channel Super Trench Power MOSFET NCEP15T18T with An Extremely Low Combination of RDS(ON) and Qg
The series of devices NCEP15T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This N-Channel Super Trench Power MOSFET device is ideal for high-frequency switching and synchronous rectification.
General Features
VDS=150V,ID=180A, RDS(ON)=4.45mΩ, typical@VGS=10V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
175℃ operating temperature
Pb-free lead plating
100% UIS TESTED
100% ΔVds TESTED
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous rectification
Absolute Maximum Ratings (TC=25℃, unless otherwise noted)
Thermal Characteristic
Electrical Characteristics (TC=25℃, unless otherwise noted)
Package Marking and Ordering Information
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本文由Vicky转载自NCE，原文标题为:NCEP15T18T NCE N-Channel Super Trench Power MOSFET，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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