50A/60V N-Channel MOSFET SLM50N06T is Used for PWM Application, Load Switch, and Power Management
This Power MOSFET SLM50N06T is produced using Msemitek's advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
50A, 60V
RDS(on)Typ=14.8mΩ@VGS=10V
RDS(on)Typ=18.2mΩ@VGS=4.5V
Low gate charge ( typical 27.2nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
Application
PWM Application
Load Switch
Power Management
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Electrical Characteristics TC=25℃ unless otherwise noted
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: TJ=25℃, VDD=20V, VG=10V, RG=25Ω, L=0.5mH,
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
N-Channel MOSFET SLM50N06T Package Marking
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本文由Vicky转载自Maplesemi，原文标题为:SLM50N06T 60V N-Channel MOSFET，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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