High-performance P-channel medium-voltage MOSFET AOD409 with a Vdss of -60V and a Id of up to -30A

In recent years, with the rapid growth in demand for new energy and intelligent applications, there has been an explosive surge in the demand for Silicon Carbide (SiC) materials. According to Yole's forecast, the SiC device market is expected to grow from $1 billion in 2021 to over $6 billion by 2027. As a crucial driving force in the global SiC industry development, the Chinese market has attracted the attention of international SiC giants. Within the rapidly expanding domestic SiC market in China, SLKOR Micro has demonstrated significant development potential.

Slkor's technical team consists mainly of researchers from Yonsei University in Korea and Tsinghua University in China, possessing leading international expertise in Silicon Carbide MOSFET production processes and fifth-generation ultra-fast recovery power diode technology. Slkor Micro's product portfolio includes three major series: diodes, transistors, power devices, and power management chips. In recent years, they have introduced new products such as Hall elements and analog devices, expanding into sensor technology and RISC-V microcontrollers.

With the rapid growth of the Chinese market, Slkor's technological strength and product innovation in the SiC field continue to be recognized. Furthermore, Slkor Micro's diversified product line provides a richer selection for SiC applications in the Chinese market.

Fig.1

As a professional semiconductor component manufacturer, Slkor Micro's product line is diverse, covering various types of products. MOSFETs, which are important semiconductor components, also hold a significant position within Slkor Micro's portfolio. Slkor Micro produces a wide variety of MOSFETs, providing high-quality and high-performance options for various industries. Among Slkor Micro's semiconductor product series, the AOD409 P-channel medium-voltage MOSFET has garnered considerable attention due to its outstanding parameters and characteristics, providing strong support for various electronic applications.

The key parameters of the AOD409 are as follows: it employs a P-channel design with a drain-source voltage (Vdss) of -60V and a continuous drain current (Id) of up to -30A. Under working conditions of -10V and -20A, its on-resistance (RDS(on)@Vgs,Id) is only 30mΩ, and its threshold voltage (Vgs(th)@Id) is -1.8V@-250uA. Additionally, the AOD409 utilizes a TO-252 package, which is convenient for installation and layout.

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AOD409 possesses several outstanding features that set it apart in electronic applications. Firstly, it utilizes a high-density cell design, achieving ultra-low on-resistance, thereby providing efficient power conversion for the system. This means that AOD409 can offer stable power support at lower power consumption, contributing to improved system energy efficiency performance.

Secondly, AOD409 features fully characterized avalanche voltage and current. This implies that in cases of overload or transient conditions within the circuit, AOD409 can reliably withstand high voltage and large currents, ensuring the stable operation of the system. Therefore, AOD409 can be used in various high-voltage environments, providing reliable protection for electronic devices. Additionally, AOD409's packaging is well-designed, with excellent heat dissipation performance. Under high load working conditions, effective heat dissipation can reduce the device's temperature, extend its lifespan, and enhance the system's reliability and stability.

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AOD409 has broad application prospects in fields such as pulse width modulation, energy management, and load switching. In pulse width modulation applications, AOD409 can achieve rapid response, provide stable power output, and meet the system's demand for efficient energy regulation. In the field of energy management, AOD409's high-density design and low on-resistance effectively improve energy conversion efficiency, providing reliable support for energy management systems. Additionally, in load switching applications, AOD409's excellent avalanche characteristics and reliable heat dissipation performance ensure system stability and reliability under various working conditions.

As a high-performance P-channel medium-voltage MOSFET, AOD409 features ultra-low on-resistance, fully characterized avalanche characteristics, and excellent heat dissipation performance. Its wide range of applications covers pulse width modulation, energy management, load switching, and many other fields, providing stable and efficient power support for electronic devices. With the continuous advancement of electronic technology, AOD409 will continue to play an important role in the electronics industry, bringing more possibilities to various application scenarios.