ROHM‘s EcoGaN™ Has Been Adopted in the 45W Output USB-C Charger C4 Duo from Innergie, a brand of Delta

2024-02-29 ROHM News
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ROHM has announced the adoption of its 650V GaN device (EcoGaN™) in the C4 Duo, a 45W output USB-C charger from Innergie, a brand of Delta. Delta is a global provider of IoT-based Smart Green Solutions headquartered in Taiwan. ROHM’s EcoGaN™ device contributes to greater application performance, reliability, and miniaturization by providing higher efficiency in power supply systems.

Efforts to save energy are accelerating toward achieving a sustainable society by reducing power loss, especially in equipment that handle high power. Furthermore, GaN devices that enable high-speed switching are being considered for power supplies, since high frequency operation not only saves energy but also allows the use of smaller circuits.


Offering GaN-based devices under the brand name EcoGaN™, ROHM is advancing product development and providing solutions by focusing on mastering the use of GaN, which has high potential but is difficult to handle. For discrete products, mass production of 150V withstand GaN HEMTs began in 2022 and 650V withstand GaN HEMTs in 2023 featuring industry-leading device performance (RDS(ON) × Ciss / RDS(ON) × Coss). What’s more, integrating an ESD protection element into the GNP1150TCA-Z improves ESD breakdown tolerance by approximately 75% over standard GaN HEMTs, and has been evaluated to improve application reliability that ultimately led its adoption.


Yuhei Yamaguchi, General Manager,

Power Stage Product Development Dept., LSI Business Div., ROHM Co., Ltd.
We are pleased to have ROHM's EcoGaN™ incorporated into USB-C chargers from Delta, a global leader in power and thermal management solutions. ROHM contributes to Delta’s prowess in high-energy power supplies by leveraging analog technology that maximizes power semiconductor performance and achieves superior topologies. Both companies share a similar management vision to realize a decarbonized and digital society, forming a strong partnership that resulted in the adoption of ROHM devices and ICs in Delta’s power circuit design. Furthermore, we look forward to our continued collaboration to promote greater miniaturization and efficiency in chargers and other products that can contribute to enriching people’s lives.


Jason Chen, General Manager,

Innergie, a brand of Delta

The development of GaN power devices is a major focus in the global electronics industry, and therefore, we have deepened our collaboration with ROHM over the past several years. Moreover, in 2022, we initiated a strategic partnership to jointly develop next-generation power semiconductors for power supply systems. This partnership has delivered ROHM’s advanced 650V GaN (GNP1150TCA-Z) devices, which are now supporting Innergie’s new products. The C4 Duo is the first model from Innergie’s One for All Series adapters to use ROHM’s GaN devices, and we expect more models to adopt this state-of-the-art technology. We believe that, by strengthening our collaboration with ROHM, we will be able to provide customers adapters featuring higher power efficiency and capability, but with much smaller product size.


ROHM EcoGaN™

Refers to ROHM’s new lineup of GaN devices that contribute to energy conservation and miniaturization by maximizing GaN characteristics to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.

EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.


授权代理商:世强先进(深圳)科技股份有限公司
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本文由玄子转载自ROHM News,原文标题为:ROHM's EcoGaN™ has been adopted in the 45W Output USB-C Charger C4 Duo from Innergie, a brand of Delta,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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原厂动态    发布时间 : 2024-08-05

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全球知名半导体制造商ROHM和电源管理解决方案领导厂商台达电子就第三代半导体GaN(氮化镓)功率器件的开发与量产缔结战略合作伙伴关系。双方将以GaN功率器件为核心,联合开发适合更多电源系统的600V耐压GaN功率器件。

原厂动态    发布时间 : 2022-04-28

罗姆在PCIM Asia上展出SiC封装模块TRCDRIVE pack™及GaN HEMT在内的丰富产品

2024年8月28-30日,全球知名半导体制造商ROHM参加在深圳国际会展中心举办的2024深圳国际电力元件、可再生能源管理展览会,简称PCIM Asia。罗姆在PCIM Asia上展出TRCDRIVE pack™及GaN HEMT在内的丰富产品。

原厂动态    发布时间 : 2024-09-14

ROHM‘s High 8V Gate Withstand Voltage Marking Technology Breakthrough for 150V GaN HEMT

ROHM‘s High 8V Gate Withstand Voltage Marking Technology Breakthrough for 150V GaN HEMT. Solving the gate breakdown voltage problem of GaN devices contributes to lower power consumption and greater miniaturization of power supplies for base stations and data centers.

新产品    发布时间 : 2021-06-30

ROHM at PCIM Europe 2024: Empowering Growth, Inspiring Innovation Showcasing Highly Efficient EcoGaN™ and SiC Power Solutions

During this year’s PCIM Europe, ROHM presents its new power semiconductor solutions – with a special focus on wide bandgap devices. ROHM’s SiC, Si and GaN portfolio is designed to fulfill the needs of various sectors – focusing on e-mobility and power supply applications.

原厂动态    发布时间 : 2024-05-21

罗姆携碳化硅和氮化镓等宽禁带半导体亮相2024 PCIM Asia,并分享最新功率电子技术成果

全球知名半导体制造商罗姆(总部位于日本京都市)于8月28日~30日参加在深圳国际会展中心(宝安新馆)举办的2024深圳国际电力元件、可再生能源管理展览会(展位号:11号馆D14)。展会上,罗姆聚焦碳化硅(SiC)和氮化镓(GaN)等宽禁带半导体,展示其面向工业设备和汽车领域的丰富产品阵容及解决方案。

原厂动态    发布时间 : 2024-09-07

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