MOSFET芯片薄化工艺(BGBM)

2024-05-07 HI-SEMICON公众号
MOSFET芯片,HI-SEMICON MOSFET芯片,HI-SEMICON MOSFET芯片,HI-SEMICON MOSFET芯片,HI-SEMICON

晶圆减薄(一般研磨)

客户晶圆完成入站检验后,依照客户晶圆特性,与前段晶圆代工厂所生产的护层确认所需使用之胶带后,进行胶带贴附 (Taping);接着,进行一般研磨 (Non-Taiko Grinding / Conventional Grinding),并在完成一般研磨后,进行晶背湿蚀刻 (Backside Wet Etching);最后,进行厚度量测 (Measurement) 后,出站检验。




案例分享(进行研磨及蚀刻后的晶圆)


研磨后的晶圆:可清楚看见研磨痕



蚀刻后的晶圆:表面己粗化


应用范围

· 适用八寸、六寸、P型 / N型晶圆

授权代理商:世强先进(深圳)科技股份有限公司
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本文由出山转载自HI-SEMICON公众号,原文标题为:MOSFET 芯片薄化工艺 (BGBM),本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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