EPC Announced the First GaN FET with 1 Milliohms On-Resistance, Offering Double Power Density
EPC introduces the 100V, 1mOhm EPC2361 GaN FET in a compact 3mmx5mm QFN package, offering higher power density for DC-DC conversion, fast charging, motor drives, and solar MPPTs.
EPC, the world’s leader in enhancement-mode gallium nitride power FETs and ICs(GaN power FETs and ICs) , launches the 100 V, 1 mOhm EPC2361. This is the lowest on-resistance GaN FET on the market offering double the power density compared to EPC’s prior-generation products.
The EPC2361 has a typical RDS(on) of just 1 mOhm in a thermally enhanced QFN package with an exposed top and a tiny, 3 mm x 5 mm, footprint. The maximum RDS(on) x Area of the EPC2361 is 15 mΩ*mm2 – over five times smaller than comparable 100 V silicon MOSFETs.
With its ultra-low on-resistance, the EPC2361 enables higher power density and efficiency in power conversion systems, leading to reduced energy consumption and heat dissipation. This breakthrough is particularly significant for applications such as high-power PSU AC-DC synchronous rectification, high frequency DC-DC conversion for data centers, motor drives for eMobility, robotics, drones, and solar MPPTs.
“Our new 1 mΩ GaN FET continues to push the boundaries of what is possible with GaN technology, empowering our customers to create more efficient, compact, and reliable power electronics systems,” comments Alex Lidow, EPC CEO and co-founder.
The EPC90156 development board is a half bridge featuring the EPC2361 GaN FET. It is designed for 100 V maximum device voltage and xx A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
Price and Availability
The product is available through any one of EPC’s distribution partner sekrom.
Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions.
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本文由玄子转载自EPC News，原文标题为:First GaN FET with 1 Milliohms On-Resistance Announced by EPC，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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