650V/16A Silicon Carbide Schottky Diode P1D16065H with Extremely Low Switching Loss and Conduction Loss, Offers State of the Art Performance
This Silicon Carbide Schottky Diode P1D16065H family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
Features
Low conduction loss due to low VF
Extremely low switching loss by tiny QC
Highly rugged due to better surge current
Industrial standard quality and reliability
Applications
UPS
Power Inverter
High performance SMPS
Power factor correction
Maximum Ratings (at Tc=25℃, unless otherwise specified)
Thermal Resistance
Electrical Characteristic (at Tc=25℃, unless otherwise specified)
Package Marking and Ordering Information
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本文由Vicky转载自PowerSiC Semiconductor，原文标题为:P1D16065H Silicon Carbide Schottky Diode 650 V, 16A，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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