Excellent High-voltage MOSFET SL8N65CF with Drain-source Voltage of 650V, Continuous Drain Current of 8A

2024-03-07 SLKOR News
High-voltage MOSFET,MOSFET,silicon carbide (SiC) diodes,SiC MOSFETs High-voltage MOSFET,MOSFET,silicon carbide (SiC) diodes,SiC MOSFETs High-voltage MOSFET,MOSFET,silicon carbide (SiC) diodes,SiC MOSFETs High-voltage MOSFET,MOSFET,silicon carbide (SiC) diodes,SiC MOSFETs

According to GGII data, the sales volume of industrial robots in China reached 316,000 units in 2023, a year-on-year increase of 4.29%. It is expected that the market sales volume in 2024 is likely to exceed 320,000 units, and the overall market will continue to show a slight increase. In addition, in 2023, the market share of domestically produced industrial robots exceeded 50% for the first time, reaching 52.45%, achieving a reversal in sales volume for the first time. This marks the gradual emergence of domestic industrial robot enterprises in the market competition, achieving remarkable results. The continuous growth of the Chinese industrial robot market brings opportunities and challenges to the entire industry. 


With the gradual increase in the market share of domestically produced industrial robots, Chinese companies will usher in new development opportunities in technology research and development, product innovation, and market competitiveness. SLKOR Micro offers high-end products such as silicon carbide (SiC) diodes, SiC MOSFETsIGBTs, fifth-generation ultra-fast recovery power diodes, etc., to meet the product needs in the robot market and intelligent industries. The Chinese industrial robot market is in a phase of continuous growth, with a gradual increase in the market share of domestic products. The participation and contribution of companies like SLKOR Micro will drive the entire industry toward a more intelligent and efficient direction, making a positive contribution to the improvement of China's industrial automation level.


In today's fast-paced field of electronic devices and systems, efficient energy conversion and management solutions are becoming increasingly important. SLKOR High-voltage MOSFET SL8N65CF shines in the face of this challenge. Manufactured using SLKOR's advanced super-junction MOSFET technology, this device is specially designed to deliver outstanding performance and reliability, meeting the requirements of various high-power applications.

Fig.1

The advanced technology of SL8N65CF minimizes on-state resistance to provide users with excellent switching performance. In addition, under avalanche and commutation modes, the SL8N65CF can withstand high-energy pulses, ensuring stable operation under demanding conditions. This makes the SL8N65CF an ideal choice for high-efficiency switch-mode power supplies, providing solid support for system stability and efficiency.

Fig.2

Main parameters of SL8N65CF: N-channel type, drain-source voltage of 650V, continuous drain current of 8A, power of 24W, on-state resistance of 550mΩ @ 10V, 2.5A, threshold voltage of 4.5V @ 250μA, TO-220F package. These parameters demonstrate the strong performance of SL8N65CF in high-voltage, high-power environments, providing users with a wide range of application possibilities.

Fig.3

SL8N65CF has many notable features, including low gate charge, ultra-fast switching, and improved dV/dt capability. These characteristics enable the device to have faster response times and higher reliability, providing users with a better experience and performance. Whether in automotive applications or high-power applications, SL8N65CF can demonstrate its excellent characteristics and meet various needs.

Fig.4

The outstanding characteristics and stable performance give SL8N65CF broad application prospects. As a field with high demands on electronic device performance, the automotive industry requires reliable and efficient power management solutions to ensure the normal operation of vehicle systems. SL8N65CF, with a drain-source voltage of up to 650V and a continuous drain current of 8A, plays an important role in automotive electronic systems. Its ultra-fast switching and improved dV/dt capability enable higher efficiency power conversion and more precise control in automotive circuits, enhancing the performance and efficiency of the entire vehicle system. SL8N65CF also has broad application prospects in high-power applications. Its excellent on-state resistance and threshold voltage parameters, as well as the TO-220F package design, enable SL8N65CF to withstand large power loads and achieve stable and reliable operation.

授权代理商:世强先进(深圳)科技股份有限公司
技术资料,数据手册,3D模型库,原理图,PCB封装文件,选型指南来源平台:世强硬创平台www.sekorm.com
现货商城,价格查询,交期查询,订货,现货采购,在线购买,样品申请渠道:世强硬创平台电子商城www.sekorm.com/supply/
概念,方案,设计,选型,BOM优化,FAE技术支持,样品,加工定制,测试,量产供应服务提供:世强硬创平台www.sekorm.com
集成电路,电子元件,电子材料,电气自动化,电机,仪器全品类供应:世强硬创平台www.sekorm.com
  • +1 赞 0
  • 收藏
  • 评论 0

本文由三年不鸣转载自SLKOR News,原文标题为:【Daily Highlight】Excellent High-voltage MOSFET SL8N65CF,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

相关研发服务和供应服务

评论

   |   

提交评论

全部评论(0

暂无评论

相关推荐

New TPSMB Asymmetrical TVS Diodes from Littelfuse Provide Superior Gate Driver Protection for Automotive SiC MOSFETs

Littelfuse announced the launch of its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical transient voltage suppression (TVS) diode specifically designed for the protection of Silicon Carbide (SiC) MOSFET gate drivers in automotive applications.

2024-12-18 -  产品 代理服务 技术支持 采购服务

ROHM’s New N-channel MOSFETs Offer High Mounting Reliability in Automotive Applications

ROHM has released N-channel MOSFETs - RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB - featuring low ON-resistance ideal for a variety of automotive applications, including motors for doors and seat positioning, as well as LED headlights.

2024-09-21 -  产品 代理服务 技术支持 采购服务

The 100V/10A N-channel MOSFET SL10N10A, An Ideal Choice for Automotive Charging Systems Due to Its Low On-state Resistance and Relatively Low Threshold Voltage

The SL10N10A is an N-channel MOSFET with a 100V drain-source voltage and a continuous drain current of 10A. It is renowned for its low on-state resistance (95mΩ at 10V, 10A) and relatively low threshold voltage (3V at 250μA). These features make it an ideal choice for automotive charging systems, and as automotive electronic technology continues to advance, the potential of the SL10N10A will be further explored and applied.

2024-04-08 -  产品 代理服务 技术支持 采购服务

JMSH0403AGQ 40V 2.7mΩN沟道功率MOSFET

描述- 本资料介绍了JMSH0403AGQ型号的N沟道功率MOSFET的特性。该器件具有超低导通电阻(RDS(ON))、低栅极电荷、经过100% UIS和Rg测试,符合RoHS标准,适用于汽车应用。

型号- JMSH0403AGQ,JMSH0403AGQ-13

2022/12/27  - 捷捷微电  - 数据手册  - Rev. 1.1 代理服务 技术支持 采购服务

JMSH040SAGQ 40V 0.56mΩN沟道功率MOSFET

描述- 本资料介绍了JMSH040SAGQ型号的40V 0.56mΩ N-Ch Power MOSFET。该器件具有超低导通电阻、低栅极电荷、100% UIS和Rg测试、无铅镀层、符合RoHS标准以及适用于汽车应用的AEC-Q101认证等特点。

型号- JMSH040SAGQ-13,JMSH040SAGQ

2023/4/23  - 捷捷微电  - 数据手册  - Rev. 2.1 代理服务 技术支持 采购服务 查看更多版本

JMSL0612AUQ 60V 10.0mΩN沟道功率MOSFET

描述- 本资料介绍了JMSL0612AUQ型号的60V 10.0mΩ N-Ch Power MOSFET。该器件具有低导通电阻、低栅极电荷、高绝缘强度等特点,适用于汽车和其他工业应用。

型号- JMSL0612AUQ-13,JMSL0612AUQ

2022/12/23  - 捷捷微电  - 数据手册  - Rev. 1.4 代理服务 技术支持 采购服务 查看更多版本

JMSH0401AGQ 40V 1.3mΩN沟道功率MOSFET

描述- 该资料介绍了JMSH0401AGQ型号的N沟道功率MOSFET的特性、参数和应用。产品具有超低导通电阻、低栅极电荷、高可靠性等特点,适用于汽车和其他工业应用。

型号- JMSH0401AGQ,JMSH0401AGQ-13

2022/12/27  - 捷捷微电  - 数据手册  - Rev. 2.5 代理服务 技术支持 采购服务 查看更多版本

JMSH0402BGQ 40V 2.0mΩN沟道功率MOSFET

描述- 本资料介绍了JMSH0402BGQ型号的40V N-Ch Power MOSFET。该器件具有超低导通电阻、低栅极电荷、高可靠性等特点,适用于汽车和其他工业应用。

型号- JMSH0402BGQ,JMSH0402BGQ-13

2023/3/16  - 捷捷微电  - 数据手册  - Rev. 1.1 代理服务 技术支持 采购服务

JMSH0406AGQ 40V 4.1mΩN沟道功率MOSFET

描述- 本资料介绍了JMSH0406AGQ型号的40V 4.1mΩ N-Ch Power MOSFET。该器件具有超低导通电阻、低栅极电荷、高可靠性等特点,适用于汽车和其他工业应用。

型号- JMSH0406AGQ,JMSH0406AGQ-13

2022/12/27  - 捷捷微电  - 数据手册  - Rev. 1.2 代理服务 技术支持 采购服务 查看更多版本

轻松了解功率MOSFET的雪崩效应

在关断状态下,功率MOSFET的体二极管结构的设计是为了阻断最小漏极-源极电压值。MOSFET体二极管的击穿或雪崩表明反向偏置体二极管两端的电场使得漏极和源[敏感词]子之间有大量电流流动。典型的阻断状态漏电流在几十皮安到几百纳安的数量级。

2024-05-31 -  设计经验 代理服务 技术支持 采购服务

JMSL0402AGQ 40V 1.6mΩN沟道功率MOSFET

描述- 本资料介绍了JMSL0402AGQ型号的N沟道功率MOSFET的特性。该器件具有超低导通电阻、低栅极电荷、高可靠性等特点,适用于汽车和其他工业应用。

型号- JMSL0402AGQ-13,JMSL0402AGQ

2022/12/27  - 捷捷微电  - 数据手册  - Rev. 2.3 代理服务 技术支持 采购服务 查看更多版本

JMSH0401ATSQ 40V 0.9MΩStoll N沟道功率MOSFET

描述- 该资料介绍了JMSH0401ATSQ型40V 0.9mΩ sTOLL N-Ch Power MOSFET的特性、参数和应用。主要包括产品概要、电学特性、热性能、典型电气与热特性、封装信息和订购信息等内容。

型号- JMSH0401ATSQ-13,JMSH0401ATSQ

2023/7/7  - 捷捷微电  - 数据手册  - Rev.1.4 代理服务 技术支持 采购服务

PANJIT‘s Latest 30V&40V Automotive-Grade MOSFETs with a High 175℃ Junction Temperature

PANJIT introduces new P-channel and N-channel MOSFETs designed to boost automotive electronic systems. By combining innovation with reliability, PANJIT‘s low voltage MOSFETs simplify power design circuitry, addressing the evolving needs of automotive design engineers.

2024-01-30 -  产品 代理服务 技术支持 采购服务

JMSL0606AGQ 60V 4.0mΩN沟道功率MOSFET

描述- 本资料介绍了JMSL0606AGQ型号的60V 4.0mΩ N-Ch Power MOSFET。该器件具有超低导通电阻、低栅极电荷、高可靠性等特点,适用于汽车和其他工业应用。

型号- JMSL0606AGQ-13,JMSL0606AGQ

2022/12/23  - 捷捷微电  - 数据手册  - Rev. 2.1 代理服务 技术支持 采购服务 查看更多版本

The 80V/100A N-channel MOSFET SL100N08 Incorporates Specialized Process Technology for High ESD Capability

The SL100N08 is an N-channel MOSFET boasting an 80V drain-source voltage and a continuous drain current of 100A. It is renowned for its low on-state resistance (12mΩ@10V, 13.5A) and relatively lower threshold voltage (2.5V@250μA). These features make it an ideal choice for automotive electronic systems. This device incorporates specialized process technology for high ESD capability.

2024-04-04 -  产品 代理服务 技术支持 采购服务
展开更多

电子商城

查看更多

品牌:SLKOR

品类:N-Channel Power MOSFET

价格:¥0.1500

现货: 100

品牌:SLKOR

品类:P-Channel Power MOSFET

价格:¥0.3125

现货: 100

品牌:SLKOR

品类:P-Channel Power MOSFET

价格:¥0.2000

现货: 50

品牌:SLKOR

品类:N-Channel Power MOSFET

价格:¥0.2125

现货: 50

品牌:SLKOR

品类:N-Channel Power MOSFET

价格:¥0.2125

现货: 50

品牌:SLKOR

品类:N-Channel Power MOSFET

价格:¥0.1000

现货: 50

品牌:SLKOR

品类:P-Channel Power MOSFET

价格:¥0.1500

现货: 50

品牌:SLKOR

品类:N-Channel Power MOSFET

价格:¥0.1025

现货: 50

品牌:SLKOR

品类:P-Channel Power MOSFET

价格:¥0.1750

现货: 50

品牌:SLKOR

品类:P-Channel Power MOSFET

价格:¥0.3125

现货: 50

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

现货市场

查看更多

品牌:扬杰科技

品类:Mosfet

价格:¥1.0500

现货:500,000

品牌:捷捷微电

品类:MOSFET

价格:¥0.7000

现货:500,000

品牌:MCC

品类:MOSFET

价格:¥0.1627

现货:305,993

品牌:RENESAS

品类:MOSFET

价格:¥1.2134

现货:263,268

品牌:TOSHIBA

品类:MOSFET

价格:¥0.2034

现货:251,269

品牌:RENESAS

品类:MOSFET

价格:¥1.9902

现货:222,500

品牌:RENESAS

品类:MOSFET

价格:¥6.0884

现货:196,984

品牌:MCC

品类:MOSFET管

价格:¥0.3248

现货:168,278

品牌:RENESAS

品类:MOSFET

价格:¥0.9533

现货:155,504

品牌:RENESAS

品类:MOSFET

价格:¥0.7526

现货:121,731

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

服务

查看更多

高热流密度液冷板定制

定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。

最小起订量: 1片 提交需求>

查看更多

授权代理品牌:接插件及结构件

查看更多

授权代理品牌:部件、组件及配件

查看更多

授权代理品牌:电源及模块

查看更多

授权代理品牌:电子材料

查看更多

授权代理品牌:仪器仪表及测试配组件

查看更多

授权代理品牌:电工工具及材料

查看更多

授权代理品牌:机械电子元件

查看更多

授权代理品牌:加工与定制

世强和原厂的技术专家将在一个工作日内解答,帮助您快速完成研发及采购。
我要提问

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

研发客服
商务客服
服务热线

联系我们

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

投诉与建议

E-mail:claim@sekorm.com

商务合作

E-mail:contact@sekorm.com

收藏
收藏当前页面