Excellent High-voltage MOSFET SL8N65CF with Drain-source Voltage of 650V, Continuous Drain Current of 8A
According to GGII data, the sales volume of industrial robots in China reached 316,000 units in 2023, a year-on-year increase of 4.29%. It is expected that the market sales volume in 2024 is likely to exceed 320,000 units, and the overall market will continue to show a slight increase. In addition, in 2023, the market share of domestically produced industrial robots exceeded 50% for the first time, reaching 52.45%, achieving a reversal in sales volume for the first time. This marks the gradual emergence of domestic industrial robot enterprises in the market competition, achieving remarkable results. The continuous growth of the Chinese industrial robot market brings opportunities and challenges to the entire industry.
With the gradual increase in the market share of domestically produced industrial robots, Chinese companies will usher in new development opportunities in technology research and development, product innovation, and market competitiveness. SLKOR Micro offers high-end products such as silicon carbide (SiC) diodes, SiC MOSFETs, IGBTs, fifth-generation ultra-fast recovery power diodes, etc., to meet the product needs in the robot market and intelligent industries. The Chinese industrial robot market is in a phase of continuous growth, with a gradual increase in the market share of domestic products. The participation and contribution of companies like SLKOR Micro will drive the entire industry toward a more intelligent and efficient direction, making a positive contribution to the improvement of China's industrial automation level.
In today's fast-paced field of electronic devices and systems, efficient energy conversion and management solutions are becoming increasingly important. SLKOR High-voltage MOSFET SL8N65CF shines in the face of this challenge. Manufactured using SLKOR's advanced super-junction MOSFET technology, this device is specially designed to deliver outstanding performance and reliability, meeting the requirements of various high-power applications.
Fig.1
The advanced technology of SL8N65CF minimizes on-state resistance to provide users with excellent switching performance. In addition, under avalanche and commutation modes, the SL8N65CF can withstand high-energy pulses, ensuring stable operation under demanding conditions. This makes the SL8N65CF an ideal choice for high-efficiency switch-mode power supplies, providing solid support for system stability and efficiency.
Fig.2
Main parameters of SL8N65CF: N-channel type, drain-source voltage of 650V, continuous drain current of 8A, power of 24W, on-state resistance of 550mΩ @ 10V, 2.5A, threshold voltage of 4.5V @ 250μA, TO-220F package. These parameters demonstrate the strong performance of SL8N65CF in high-voltage, high-power environments, providing users with a wide range of application possibilities.
Fig.3
SL8N65CF has many notable features, including low gate charge, ultra-fast switching, and improved dV/dt capability. These characteristics enable the device to have faster response times and higher reliability, providing users with a better experience and performance. Whether in automotive applications or high-power applications, SL8N65CF can demonstrate its excellent characteristics and meet various needs.
Fig.4
The outstanding characteristics and stable performance give SL8N65CF broad application prospects. As a field with high demands on electronic device performance, the automotive industry requires reliable and efficient power management solutions to ensure the normal operation of vehicle systems. SL8N65CF, with a drain-source voltage of up to 650V and a continuous drain current of 8A, plays an important role in automotive electronic systems. Its ultra-fast switching and improved dV/dt capability enable higher efficiency power conversion and more precise control in automotive circuits, enhancing the performance and efficiency of the entire vehicle system. SL8N65CF also has broad application prospects in high-power applications. Its excellent on-state resistance and threshold voltage parameters, as well as the TO-220F package design, enable SL8N65CF to withstand large power loads and achieve stable and reliable operation.
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本文由三年不鸣转载自SLKOR News,原文标题为:【Daily Highlight】Excellent High-voltage MOSFET SL8N65CF,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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