Excellent High-voltage MOSFET SL8N65CF with Drain-source Voltage of 650V, Continuous Drain Current of 8A

时间： 2024-03-07 来源：SLKOR News

技术问答

According to GGII data, the sales volume of industrial robots in China reached 316,000 units in 2023, a year-on-year increase of 4.29%. It is expected that the market sales volume in 2024 is likely to exceed 320,000 units, and the overall market will continue to show a slight increase. In addition, in 2023, the market share of domestically produced industrial robots exceeded 50% for the first time, reaching 52.45%, achieving a reversal in sales volume for the first time. This marks the gradual emergence of domestic industrial robot enterprises in the market competition, achieving remarkable results. The continuous growth of the Chinese industrial robot market brings opportunities and challenges to the entire industry.

With the gradual increase in the market share of domestically produced industrial robots, Chinese companies will usher in new development opportunities in technology research and development, product innovation, and market competitiveness. SLKOR Micro offers high-end products such as silicon carbide (SiC) diodes, SiC MOSFETs, IGBTs, fifth-generation ultra-fast recovery power diodes, etc., to meet the product needs in the robot market and intelligent industries. The Chinese industrial robot market is in a phase of continuous growth, with a gradual increase in the market share of domestic products. The participation and contribution of companies like SLKOR Micro will drive the entire industry toward a more intelligent and efficient direction, making a positive contribution to the improvement of China's industrial automation level.

In today's fast-paced field of electronic devices and systems, efficient energy conversion and management solutions are becoming increasingly important. SLKOR High-voltage MOSFET SL8N65CF shines in the face of this challenge. Manufactured using SLKOR's advanced super-junction MOSFET technology, this device is specially designed to deliver outstanding performance and reliability, meeting the requirements of various high-power applications.

Fig.1

The advanced technology of SL8N65CF minimizes on-state resistance to provide users with excellent switching performance. In addition, under avalanche and commutation modes, the SL8N65CF can withstand high-energy pulses, ensuring stable operation under demanding conditions. This makes the SL8N65CF an ideal choice for high-efficiency switch-mode power supplies, providing solid support for system stability and efficiency.

Fig.2

Main parameters of SL8N65CF: N-channel type, drain-source voltage of 650V, continuous drain current of 8A, power of 24W, on-state resistance of 550mΩ @ 10V, 2.5A, threshold voltage of 4.5V @ 250μA, TO-220F package. These parameters demonstrate the strong performance of SL8N65CF in high-voltage, high-power environments, providing users with a wide range of application possibilities.

Fig.3

SL8N65CF has many notable features, including low gate charge, ultra-fast switching, and improved dV/dt capability. These characteristics enable the device to have faster response times and higher reliability, providing users with a better experience and performance. Whether in automotive applications or high-power applications, SL8N65CF can demonstrate its excellent characteristics and meet various needs.

Fig.4

The outstanding characteristics and stable performance give SL8N65CF broad application prospects. As a field with high demands on electronic device performance, the automotive industry requires reliable and efficient power management solutions to ensure the normal operation of vehicle systems. SL8N65CF, with a drain-source voltage of up to 650V and a continuous drain current of 8A, plays an important role in automotive electronic systems. Its ultra-fast switching and improved dV/dt capability enable higher efficiency power conversion and more precise control in automotive circuits, enhancing the performance and efficiency of the entire vehicle system. SL8N65CF also has broad application prospects in high-power applications. Its excellent on-state resistance and threshold voltage parameters, as well as the TO-220F package design, enable SL8N65CF to withstand large power loads and achieve stable and reliable operation.

发送到邮箱 |
+1 赞 0
收藏
评论 0
| 转发至：

本文由三年不鸣转载自SLKOR News，原文标题为:【Daily Highlight】Excellent High-voltage MOSFET SL8N65CF，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

全部评论（0）

暂无评论

PANJIT‘s Latest 30V＆40V Automotive-Grade MOSFETs with a High 175℃ Junction Temperature

PANJIT introduces new P-channel and N-channel MOSFETs designed to boost automotive electronic systems. By combining innovation with reliability, PANJIT‘s low voltage MOSFETs simplify power design circuitry, addressing the evolving needs of automotive design engineers.

产品发布时间 : 2024-01-30

ROHM’s New N-channel MOSFETs Offer High Mounting Reliability in Automotive Applications

ROHM has released N-channel MOSFETs - RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB - featuring low ON-resistance ideal for a variety of automotive applications, including motors for doors and seat positioning, as well as LED headlights.

产品发布时间 : 2024-09-21

The 200V/19A N-channel MOSFET IRF640, An Ideal Switching Component In the Motor Drive Systems of New Energy Vehicles

The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250μA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new energy vehicles, especially in situations requiring high efficiency and precise control. It is suitable for various medium-voltage switching and power control applications.

产品发布时间 : 2024-03-30

捷捷微电（JieJie Microelectronics）金属氧化场效应晶体管（MOSFET）选型指南（英文）

目录- Company Profile Nomenclature of MOSFETs Automotive-grade MOSFETs Industrial-grade MOSFETs High-voltage MOSFETs APPLICATIONS OF AUTO-GRADE POWER SEMICONDUCTORS LEADING MOSFET PRODUCT INTRODUCTION MOSFET SYSTEM CERTIFICATION MOSFET PACKING INFORMATION

型号- JMTK130P04A,JMTL3404A,JMSH0805PK,JMSH1507PC,SMAJ6.0CA,JMGK540P10A,JMSH1507PE,JMTG055N04A,JEU12N3,JMTE060N06A,JMSH0406AKQ,JMSL0609AUQ,JMTC3003A,JMGC540P10A,JMSH1010AKQ,JMTK3006B,JMTQ440P04A,JMSH0805PG,JMSH0805PE,JMTC60N04B,JMSH0805PC,JMPF10N80G1,JMTR3002A,JMTLB2N7002KDS,JEB12C,JMTK3005A,JMGI088V10A,JMSL0602AGQ,JMSH0601AG,JMSL0612AKQ,JMTE035N04A,JMSL0406AGDQ,JMTC4004A,JMTQ075N03D,JMTL3407A,JMTK58N06B,JMTG080P03A,JMTK3005L,JMSL1013AGD,JMGC044V10D,JMTK3004A,JMSL0603BGQ,JMSH0601BG,JMTQ11DN10A,JMH65R290ACFP,SMBJ22CA-AU,JMTL3406A,JMTK320N10A,JMTC320N10A,JMTL3400A,5.0SMDJ12CA,JMTK3003A,10BJ26CA-AU,JMSL0604AGQ,JMTM3415KL,JMTQ200P03A,JMTL2310A,JMTY11DN10A,JMTI50N06B,JMTL3400L,JMTV075N03A,JEB03CX,JMSL0302DG,JMTK3002B,JMTE018N03A,JMSL1008AKQ,JMSH1510AG,JMTG062N04D,JMSH1002AEQ,JMTK4006A,JMTG080N04D,JMSH1004BGWQ,JMSH0603AK,15BJ33A-AU,JMTL3402A,JMSL0302BU,JMTG170N06A,JMTL2312A,JMTK500N10A,JMTG100P03A,JMTK4005A,SM8S24CA-AL,JMSL0302BG,JMTL3401B,JMTL3401A,15BJ22A-AU,JMTC3005A,JMSL0315APD,JMSL0302AU,JMSH0601AGQ,SM8S33CA-AL,JMSL0302AK,JMPL0648AGQ,JMTC6888A,JMTK4004A,JMPF9N65G1,JMSL0302AG,JMGM14DV10A,SMBJ22A-AU,JMTJ250P02A,JMTV3010A,15BJ30A-AU,JMSL0601BGQ,JMTL3415KL,JMSL0315ARD,JMSH0401CGQ,JMPL0622AK,JMH65R430AK,JMSL1070APD,JMSH1516AC,JMTLB3134K,JMTI10N10A,JMSH1516AE,JMH65R430AF,JMSH1516AG,JMPK9N65G1,JMH65R430AE,JECR3006SL,JMTP130P04A,JMSH1004ACR,JMSL1008AGQ,JMSH1507AEQ,JMSL0620AGDEQ,JMPL0648AUQ,JMH65R190ACFP,JMH65R980APLN,JMSH1565AUS,JMSL0609AKQ,JMSL0315AUD,JMSL0610AGDQ,JMPK840G1,JMSH0801AG,JMPF20N65G1,JMTV210P02A,JMTL850P04A,JMPK2N65G1,SMBJ5.0A,JMTK2007A,JMTP4435A,JMTC035N06D,JMTC085P04A,JMTP230C04D,JMTK018N03A,SMAJ5.0CA,JMSL0620AUE,JMTG60N04B,JMTK2006A,JMTP380N03D,JEU12T2BL,JMPFP7N65G1,JMTN11DN10A,JMTK90N02A,JMSH0401AGQ,RS1MAF,SMDJ5.0A,JMGK088V10A,15BJ24A-AU,JMTK110N06A,JMTC035N04A,JMTL2N7002KS,JMH65R040ASFDQ,JMSL0612AGQ,JMSH1207AG,JMSH1207AE,JMSH1207AC,JMSL0609APD,SMBJ30CA-AU,JMSL1040AGD,JMSH0803AG,US5M,JMSL0609AG,15BJ26CA-AU,JMSH1305AC,JMH65R490AFFD,JMSL0609AK,JMSH1305AE,JMSL0403AGQ,JMTP130N04A,JMTI320N10A,JMSL1006AGQ,JMSL0609AP,JMSH1004AEQ,JMSL0609AU,JMSL1040AGQ,SMBJ5.0CA,JMSH0803AGS,JMTG060N06A,JMSL0615AUD,JMTE6888A,JMSH2010BC,JMSH2010BE,JMTP045N03A,JMH65R110ACFD,JMTC80N06A,JMTE3003A,JMSL0307AV,JMSH1565APS,SM6P36A,10BJ24A-AU,JMSL1008AE,SM6P36C,JMTK060N06A,JMSL1008AC,JMSH1004BG,JMSL1008AG,JMSH1001ATL,JMSL1008AK,JMSL1008AP,JMSL0307AG,JMPL1050APD,JMTV080N02A,JMTE3002B,JMSL1018AGD,JMPF9N90G1,JMSH0606AKQ,JMTK060P03A,JMSL1018AGQ,JMSL0403AG,JMSL0403AU,JMSH0402BGQ,JMSH1004BE,JMSH1507AC,JMSL0402BGQ,JMSL1010PG,JMSH1004BC,JMSH1507AE,JMSL0620AGE,SM8S30A-AL,JMSH2010BS,SMBJ24A-AU,JMTJ2302C,JMSL040SAG,JMSH0401CG,JMTQ130P04A,JMTT8810KS,JMTL3134K,JMSH1004AE,JMSH1004AC,JMH65R190APLNFD,5.0SMDJ11A,JMSH1504ATL,JMSH1003ATL,JMSH041AGQ,JMH65R110AEFD,JMTQ240N03D,JEB24T2BH,JMSH1504ASQ,JMTQ040N03A,JMTG018N03A,JMSL0401AGQ,JMTG060P03A,JMSL0401AG,JMSH0606AGQ,JMTC170N10A,JMSL1018AKQ,JMTQ130N04D,JMSH1006AG,JMSH1006AE,JMSH1006AK,15BJ26A-AU,JMH65R980ACFP,JMSH1508AEQ,JMTE025N04D,JMSH0801ATL,JMTK170N10A,JMTQ240N03A,JMTY2310A,JMPK7N65G1,15BJ33CA-AU,JMTI290N06A,JMSL0401BG,JMTI3005A,JMTG90N02A,JMSL0606AGWQ,SMBJ24CA-AU,5.0SMDJ12A,JMSL0610AGD,JMSL0609AGQ,JMSH1535AGQ,JMTQ055N04A,JMTQ240C03D,JMSH1006AC,JMSH0403AGQ,JMSH1001ATLQ,JMPL1050AK,JMTE070N07A,JMPL1050AP,JMSH0403BG,JMTP250P03A,JMSH040SAG,10BJ26A-AU,JMPL1050AU,JMTL3134KT5,JMSL030SAG,JMPL1050AY,SMAJ6.0A,JMPL0622AKQ,JMSL0406AUQ,JMTQ100P03A,JMPF7N65BJ,JMTL3134KT7,JMSH1565AGS,JMPK1N60G1,JMTK80N06A,JMSH0401ATL,JMTG070N06A,JMSH0403AG,JMSL0303AU,JMSL0303AG,JMTV100N02A,JMGL3V10A,JMSL0303AK,JMPL1050AGQ,JMSH0406AGDQ,JMPL1050AG,JMPL1050AE,JMSL1004BG,JMSL0603BG,JMTV070N02A,SMBJ26A-AU,JMTC025N04D,JMTK050P03A,JMSL0605AGD,JMTK290N06A,JMTP120C03D,JMGP10V10A,JMSL0603AK,JMTM8810KS,JMSL1009BUQ,JMSH0403AKQ,JMTG100N06A,JMTG100N06D,SM6P30A,SM6P30C,JMTG170C04D,JMTP850P04A,JMTL400N04A,JMSL0315AGD,JMSL1008AUN,JMSH0830AG,JMSH1565AKS,SM6P33A,SM6P33C,JMTQ100N04A,JMSH0401BG,JMTG030P02A,15BJ30CA-AU,JMGK10V10A,JMTG100N03A,JMH65R430AKQ,JMGK020V04A,JMPL1050AKQ,JMSL1006AG,JMSL1006AK,JMTQ100N03A,JEU05T2B,JMSH0401AG,JMTV200P03A,JMSH1010AGQ,JMTP11DN10A,JMSH1504NTL,JMSH1002CE,JMSL1020AGDQ,JMTD2N7002KS,JMSH1002CC,JMTG100N04A,JMSL1070AK,JMTV2333A,JMSH1002AS,JMSH0602AKQ,JMTQ55P02A,JMTG200C03D,JMPF8N60G1,JMSL0612AG,JMSL1070AY,JMSL0601BG,JMSL0630AGD,JMTK120N03A,JMTG016N04A,JMSL0612AK,JMGC088V10A,JMSH1002BC,JMSL0612AU,JMSH1002BE,JMSH1509AC,JMSH1509AE,JMSH1509AG,JMTLA3134K,JMSL10130AK,JMSL10130AL,JMSL10130AM,JMTG100C03D,JMSL10130AP,SM8S30CA-AL,JMSH1506ASQ,JMSL0601AG,SMCJ5.0A,JMSL10130AY,JMTV3400A,JMSH1002AC,JMTK035N04L,JMTQ170C04D,JMSL0615APD,JMSH1002AE,JMSL1018AUQ,JMTG130P04A,JMTQ320N10A,JMSH0605AGDQ,JMSH0602AK,JMPK2N60G1,JMSH0804NK,JMSH0602AC,JMSL0310AU,JMSH0602AG,JMSL0615AGDQ,JMSH0602AE,JMSH1511AC,JEU24P3,JMTL2302B,JMTL2302C,JMGG031V06A,JMTK080P03A,JMSL0406AKQ,JMH65R110AEFDQ,JMGG540P10A,JMSL1023AY,JMSL1010AKQ,JMTG3005A,JMTG120C03D,JMSH1535AG,JMSH1001AE7,JMH70R430AK,JECR6006SL,SMBJ26CA-AU,JMSH0804NG,JMTP170C04D,JMSH0804NE,JMH70R430AF,JMSH0804NC,5.0SM

选型指南 - 捷捷微电 - V1.0a - 2023/7/7 PDF 英文下载

碳化硅MOS管（SiC-MOSFET）的特征

本文通过与Si功率元器件的比较，来说明SiC-MOSFET的耐压范围。

技术探讨发布时间 : 2024-07-17

IGBTs: Market Insights, Growth, and Global Trends

The demand for IGBTs (Insulated Gate Bipolar Transistors) has surged recently, fueled by the swift advancements in technology, especially in the electric vehicle, solar energy, energy storage markets, and industrial sectors. These specialized power semiconductor devices act as switches in various applications, particularly in the automotive and grid-related industries.

行业资讯发布时间 : 2024-11-21

UNISONIC TECHNOLOGIES CO., LTD POWER MOSFET UF3808 140A, 75V N-CHANNEL POWER MOSFET

型号- UF3808,UF3808L-TA3-T,UF3808G-TA3-T

数据手册 - UTC - 2018/01/15 PDF 英文下载

SiC-MOSFET与Si-MOSFET相比，区别在哪？

SiC-MOSFET与Si-MOSFET相比，具有以下区别：由于SiC-MOSFET的漂移层电阻低、通道电阻高的特性，其驱动电压即栅极－源极间电压Vgs越高时，导通电阻越低。SiC-MOSFET的导通电阻从Vgs约为20V开始变化（下降）并逐渐减小，接近最小值。

技术探讨发布时间 : 2024-04-26

ROHM at PCIM Europe 2024: Empowering Growth, Inspiring Innovation Showcasing Highly Efficient EcoGaN™ and SiC Power Solutions

During this year’s PCIM Europe, ROHM presents its new power semiconductor solutions – with a special focus on wide bandgap devices. ROHM’s SiC, Si and GaN portfolio is designed to fulfill the needs of various sectors – focusing on e-mobility and power supply applications.

原厂动态发布时间 : 2024-05-21

轻松了解功率MOSFET的雪崩效应

在关断状态下，功率MOSFET的体二极管结构的设计是为了阻断最小漏极-源极电压值。MOSFET体二极管的击穿或雪崩表明反向偏置体二极管两端的电场使得漏极和源[敏感词]子之间有大量电流流动。典型的阻断状态漏电流在几十皮安到几百纳安的数量级。

设计经验发布时间 : 2024-05-31

AD-CJAB3R2SN04AL Plastic-Encapsulated MOSFET

型号- AD-CJAB3R2SN04AL

数据手册 - 长晶科技 - Version 1.0 - 2023-11-27 PDF 英文下载查看更多版本

SMC’s 1200V SiC Power MOSFET S2M0025120K is Selected in Everything PE‘s Top MOSFETs in 2023

SMC Diode Solution’s 1200 V SiC Power MOSFET, S2M0025120K, has been selected as one of everything PE‘s top MOSFETs in 2023. S2M0025120K is designed for energy-sensitive, high-frequency applications in challenging environments.

产品发布时间 : 2024-04-11

The -60V/-30A P-channel MOSFET IRFR5305 Has Extensive Applications and Significant Advantages in the Small Home Appliance Sector

The IRFR5305 is a P-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (-60V) and a large current carrying capacity (-30A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (26mΩ@-10V, -15A) and low threshold voltage (-1.8V@-250μA) ensure reduced power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing strong support for enhancing the performance and improving the energy efficiency of electronic equipment and systems.

产品发布时间 : 2024-03-28

Announcing the launch of an AEC-Q101 compliant high withstand voltage 900V MOSFET, Contributing to Improved Reliability in Vehicle Device Applications

Shindengen will launch new 900V withstand voltage 1A and 2A models in the VX3 Series high withstand voltage MOSFET for vehicle applications in April. These products feature revised internal structures to achieve HBM 2kV guarantee and MM 200V guarantee, and are compatible with the high ESD tolerances required for vehicle device applications.

产品发布时间 : 2024-03-18

The 50V/220mA N-channel MOSFET BSS138 with High Efficiency, Low Power Consumption and High Reliability Is Suitable for LED Driving Applications

The Slkor Medium Voltage MOSFET BSS138 is an N-channel MOSFET with a drain-source voltage of 50V and a continuous drain current of 220mA. It is renowned for its low on-state resistance (3.5Ω@10V, 220mA) and low threshold voltage (1.6V@1mA). This MOSFET offers numerous advantages in LED driving applications, including high efficiency, low power consumption and high reliability. With careful design and selection, its role in LED driving circuits can be fully utilized, providing stable and efficient lighting solutions for modern electronic devices.

产品发布时间 : 2024-04-11