65V/120A N-Channel Enhancement Mode Power MOSFETs VM6503 with Improved dv/dt Capability and Fast Switching Performance

时间： 2024-03-09 来源：Viva

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N-Channel MOSFETs,N-Channel enhancement mode power field effect transistors,VM6503,昱盛电子

These N-Channel enhancement mode power field effect transistors VM6503 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These N-Channel MOSFETs devices are well suited for high efficiency fast switching applications.

Features

65V,120A, R_DS(ON)=3.5mΩ@V_GS=10V

Improved dv/dt capability

Fast switching

Green Device Available

Applications

Networking

Load Switch

LED applications

Absolute Maximum Ratings Tc=25℃ unless otherwise noted

Thermal Characteristics

Electrical Characteristics (T_J=25℃, unless otherwise noted)

Note :

1. Repetitive Rating : Pulsed width limited by maximum junction temperature.

2. V_DD=25V,V_GS=10V,L=0.1mH,I_AS=66A,R_G=25Ω,Starting T_J=25℃.

3. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦2%.

4. Essentially independent of operating temperature.

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昱盛电子MOSFET选型表

昱盛电子提供以下参数的MOSFET选型， MaxVth：1~4V，Ciss：72.9~6500pF，Coss：18.3~4100pF，Crss：2.2~370pF

产品型号	品类	V(BR)DSS (V) Min.	VGS (±V) Max.	Vth (V) Max.	RDS(ON) (mΩ) Max.@VGS=10V	RDS(ON) (mΩ) Max.@VGS=4.5V	Ciss (pF) Typ.	Coss (pF) Typ.	Crss (pF) Typ.	ID (A)@25℃ Max.	PD (W)@25℃ Max.
VM2001	N-Channel MOSFETs	-20	10	1		8.3	3300	420	370	55	51

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