100V/16A N-Channel MOSFETs VM9001 Are Well Suited for High Efficiency Fast Switching Applications
These N-Channel enhancement mode power field effect transistors VM9001 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These N-Channel MOSFETs devices are well suited for high efficiency fast switching applications.
Features
100V,16A, RDS(ON)=38mΩ@VGS=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
Motor Drive
Power Tools
LED Lighting
Quick Charger
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Thermal Characteristics
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Note :
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. VDD=50V,VGS=10V,L=0.1mH,IAS=26A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed, pulse width ≦300μs, duty cycle ≦2%.
4. Essentially independent of operating temperature.
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本文由Vicky转载自Viva，原文标题为:VM9001 100V N-Channel MOSFETs，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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