100V/16A N-Channel MOSFETs VM9001 Are Well Suited for High Efficiency Fast Switching Applications

时间： 2024-03-08 来源：Viva

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N-Channel MOSFETs,N-Channel enhancement mode power field effect transistors,VM9001,昱盛电子

These N-Channel enhancement mode power field effect transistors VM9001 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These N-Channel MOSFETs devices are well suited for high efficiency fast switching applications.

Features

100V,16A, R_DS(ON)=38mΩ@V_GS=10V

Improved dv/dt capability

Fast switching

100% EAS Guaranteed

Green Device Available

Applications

Motor Drive

Power Tools

LED Lighting

Quick Charger

Absolute Maximum Ratings Tc=25℃ unless otherwise noted

Thermal Characteristics

Electrical Characteristics (T_J=25℃, unless otherwise noted)

Note :

1. Repetitive Rating: Pulsed width limited by maximum junction temperature.

2. V_DD=50V,V_GS=10V,L=0.1mH,I_AS=26A,R_G=25Ω,Starting T_J=25℃.

3. The data tested by pulsed, pulse width ≦300μs, duty cycle ≦2%.

4. Essentially independent of operating temperature.

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