500V/18A N-Channel Power MOSFET CM18N50BTP/F with High Cell Density and High Voltage Planar Technology
The CM18N50BTP/F is the N-Channel enhancement mode power field effect transistors with high cell density, high voltage planar technology. This high density process and design have been optimized switching performance and especially tailored to minimize on-state resistance.
Features
VDS: 500V
ID (@VGS=10V): 18A
RDSON (@VGS=10V) : < 0.33Ω
High density cell design for extremely low RDSON
Excellent on-resistance and DC current capability
Applications
AC/DC load switch
SMPS
LED power
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Electrical Characteristics (Tc=25℃ unless otherwise noted)
Noted:
(1) Pulse Test: Pulse Width≤300μs, Duty cycle ≤2%
(2) Pulse width limited by maximum junction temperature
(3) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. With 2oz Copper, t≤10s
(4) Drain current limited by maximum junction temperature
The N-Channel Power MOSFET Ordering Information
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本文由Vicky转载自APM，原文标题为:CM18N50BTP/F N-Channel 500V (D-S) Power MOSFET，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
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可定制均温板VC最薄0.4mm，有效导热系数超5,000 W / m·K（纯铜(401 W/m·K ，石墨烯1,200 W/m·K）。工作温度范围同时满足低于-250℃和高于2000℃的应用，定制最低要求，项目年采购额大于10万人民币，或采购台套数大于2000套。
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