710V/96A N-Channel Super Junction Power MOSFET NCE65NF023T with Ultra-Low RDS(ON), Low Gate Charge and A Rapid Recovery Body Diode
The series of N-Channel MOSFET NCE65NF023T devices use advanced trench gate super junction technology and design to provide ultra-low RDS(ON) and low gate charge with a rapid recovery body diode. This N-Channel Super Junction Power MOSFET fits the industry's AC-DC SMPS requirements for PFC, AC/DC power conversion, industrial power applications, fast charger, new energy vehicle charging pile, on-board OBC, etc.
Features
New technology for high voltage device
Ultra low on-resistance and ultra low conduction losses
Ultra Low Gate Charge cause lower driving requirements
Diode reverse recovery speed is super fast
100% Avalanche Tested and 100% Trr Tested
High reliability
ROHS compliant
Application
Power factor correction (PFC)
Switched mode power supplies (SMPS)
Uninterruptible Power Supply (UPS)
On-board charger (OBC)
Absolute Maximum Ratings (TC=25℃)
Thermal Characteristic
Electrical Characteristics (TA=25℃ unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃, VDD=50V, VG=10V, RG=25Ω
Package Marking And Ordering Information
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本文由Vicky转载自NCE，原文标题为:NCE65NF023T N-Channel Super Junction Power MOSFET IV，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
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