Now available in TO-247 with 3 or 4 leads, the SiC MOSFET

时间： 2024-03-06 来源：Diotec News

技术问答

DIOTEC Semiconductor offers a new product which components are highly suitable for EV charging systems for electric vehicles, solar inverters, and telecom power supplies:

The SiC MOSFET in TO-247 with 3 or 4 Leads.

The specifications of this silicon carbide MOSFET are low switching losses, high voltage levels (1200 V), maximum 53 mΩ to 23 mΩ on-state resistance (RDSon), low gate charge (from -8 V to 22 V continuous gate-source-voltage (VGSS)) and more:

DIW120SIC023-AQ, DIW120SIC059-AQ, DIF120SIC053-AQ

Therefore, this package is suitable for all applications where high voltage levels are switched at very high frequency, like charging stations for motorbikes, cars, buses or trucks or solar inverters. Solar inverters convert the direct current (DC) generated by solar panels into alternating current (AC), which is required for our home and workplace electricity supplies. EV chargers and telecom power supplies need the opposite, here AC is converted into DC for charging a battery. In either case, the inverter switches high voltage levels at very high frequencies.

发送到邮箱 |
+1 赞 0
收藏
评论 0
| 转发至：

本文由玄子转载自Diotec News，原文标题为:Now available in TO-247 with 3 or 4 leads, the SiC MOSFET，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

全部评论（0）

暂无评论

【元件】德欧泰克新品SiC MOSFET，导通电阻低至23mΩ，适用于电动汽车充电系统、太阳能逆变器和电信电源

DIOTEC推出了一款新产品，非常适合电动汽车的充电系统、太阳能逆变器和电信电源的应用：这就是TO-247封装的SiC MOSFET，有3或4引脚可供选择；规格包括低开关损耗、高电压电平（1200V）、最大53mΩ至23mΩ导通电阻（RDSon）等。

产品发布时间 : 2023-10-11

【元件】业界最低6mΩ导通电阻！澜芯半导体新品1200V SiC MOSFET，采用TO247-PLUS封装

上海澜芯半导体发布了业界最低导通电阻的单管产品！LX2C006N120AP——6mΩ，1200V，SiC MOSFET。采用澜芯半导体最新的第二代SiC MOSFET技术平台，TO247-PLUS封装，该产品拥有业界领先的低导通电阻。在不同温度的应用场景下导通电阻的温度系数非常低，适应不同的应用场景。

产品发布时间 : 2023-11-15

IV1Q12750O3 – 1200V 750mΩ SiC MOSFET

型号- IV1Q12750O3

数据手册 - 瞻芯电子 - Rev1.0 - Oct. 2021 PDF 英文下载

IV1Q12080T4 – 1200V 80mΩ SiC MOSFET

型号- IV1Q12080T4

数据手册 - 瞻芯电子 - Rev0.5 - Jul. 2020 PDF 英文下载查看更多版本

ISOPLUS – SMPD: An Advanced Isolated Packaging to Fully Exploit the Advantages of SiC MOSFETs White Paper

白皮书 - LITTELFUSE - Rev 24.03c - 2024/3/20 PDF 英文下载

IV2Q171R0D7 – 1700V 1000mΩ SiC MOSFET

型号- IV2Q171R0D7

数据手册 - 瞻芯电子 - Rev 1.0 - Nov. 2022 PDF 英文下载

Silicon Carbide cooperation between SEMIKRON and ROHM Semiconductor: ROHM’s SiC technology empowers SEMIKRON’s eMPack® for the next generation of electric vehicles

ROHM’s latest 4th generation of SiC MOSFETs, which has been adopted by SEMIKRON, provides industry-leading low ON resistance with improved short-circuit withstand time. These characteristics contribute significantly to extending the driving length and miniaturizing the batteries of EVs when they are used in traction inverters.

原厂动态发布时间 : 2022-07-21

P3M12020K4 N-Channel Enhancement Mode SiC MOSFET

型号- P3M12020K4

数据手册 - 派恩杰 - Ver. 1.3 - Mar. 2024 PDF 英文下载

IV2Q12017BC – 1200V 17mΩ SiC MOSFET Chip

型号- IV2Q12017BC

数据手册 - 瞻芯电子 - Rev0.5 - Sep. 2021 PDF 英文下载

IV1Q12050T4 – 1200V 50mΩ SiC MOSFET

型号- IV1Q12050T4

数据手册 - 瞻芯电子 - Rev1.0 - Sep. 2020 PDF 英文下载查看更多版本

IV2Q12030D7Z – 1200V 30mΩ Gen2 Automotive SiC MOSFET

型号- IV2Q12030D7Z

数据手册 - 瞻芯电子 - Rev 0.5 - July. 2023 PDF 英文下载

IV1Q12080D7Z– 1200V 80mΩ Automotive SiC MOSFET

型号- IV1Q12080D7Z

数据手册 - 瞻芯电子 - ver. 0.5 - June. 2022 PDF 英文下载

CRXQF40M120G1 SiC MOSFET 1200V, 40mΩ, 55A

型号- CRXQF40M120G1

数据手册 - 华润微电子 - Revison 1.0 - 2022/8/24 PDF 英文下载

1200V反向额定电压的SiC MOSFET DIW120SIC023-AQ，助力电动汽车实现快速、有效充电

DIOTEC的SiC MOSFET DIW120SIC023-AQ在电动汽车停放机器人的充电电路中采用了先进的技术。它提供1200V的反向额定电压，极低的导通电阻仅为23mΩ，以及超高的开关速度。这将最大限度地减少电能转换和传输过程中的功率损耗，从而实现更快速、更有效的充电。所有这些都使得充电过程更高效，减少了充电时间并提高了整体系统性能。

应用方案发布时间 : 2024-06-21