Reliable Power MOSFETs SL11N65CD Providing Excellent Performance for High-efficiency Switched-mode Power Supplies

With 5G commercialization now having been in place for five years, the global number of 5G users has exceeded 1.5 billion, accounting for 20% of the total global mobile users and contributing to 30% of mobile traffic and 40% of mobile business revenue. 2024 has been hailed as the first year of commercialization for 5G-A, marking a milestone where 5G technology will integrate cloud computing and artificial intelligence, heralding a new era. The widespread application of 5G technology will bring huge business opportunities to the semiconductor industry, driving significant demand in the semiconductor market. In this wave, Salk Micro (www.SLKORmicro.com) stands out as a rapidly growing semiconductor company. Salkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China, while most of the wafer manufacturing and packaging testing are carried out within China. The company's employees and partners are spread globally, with an advanced product performance and reliability testing laboratory and central warehouse located at its headquarters in Shenzhen. Slkor not only excels in technological innovation but also emphasizes intellectual property protection, with over a hundred invention patents filed and a product range exceeding 2000 models. The company serves over ten thousand customers worldwide, with products exported to regions such as Europe, America, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years.

With the continuous development of electronic technology, there is an increasing demand for high-voltage MOSFETs. In this field, Slkor' SL11N65CD power MOSFET is an excellent choice. This product is manufactured using Slkor's advanced super-junction MOSFET technology, which reduces on-state resistance through specialized design and provides outstanding switching performance, withstanding high-energy pulses in avalanche and commutation modes.

Fig.1

The SL11N65CD is an N-channel power MOSFET with a drain-source voltage of 650V, continuous drain current of 11A, and a power rating of 87W. Additionally, it has an on-state resistance of 318mΩ @ 10V, 4.0A, threshold voltage of 4.5V @ 0.8mA, and comes in a TO-252 package. These parameters make the SL11N65CD highly suitable for high-efficiency switched-mode power supplies or electronic applications requiring medium-high voltage, high current, and moderate power.

In addition to its excellent performance characteristics, the SL11N65CD also possesses other features. Firstly, its high ruggedness allows it to operate in various harsh environments, making it widely used in industrial control, power equipment, and other fields. Secondly, the low gate charge and fast switching characteristics of the SL11N65CD can effectively improve system conversion efficiency, reduce energy loss, lower temperatures, thus enhancing system reliability and lifespan. Lastly, the SL11N65CD undergoes 100% avalanche testing, ensuring its stability and reliability in various application scenarios.

Fig.2

The SL11N65CD is particularly suitable for scenarios requiring medium-high voltage and large current loads. In high-efficiency switched-mode power supplies, the SL11N65CD demonstrates outstanding performance. Its fast switching characteristics and low gate charge effectively reduce switch losses and improve overall power conversion efficiency. It finds wide application in electronic scenarios with medium-high voltage, large current, and moderate power. For example, in industrial control systems, power modules that need to withstand high voltage and large current loads can use this MOSFET as a key component to ensure system stability and reliability. In the field of power equipment, the SL11N65CD can also be utilized in inverters, power supplies, and other parts to enhance system efficiency and performance.

In conclusion, Slkor' SL11N65CD power MOSFET is a high-voltage MOSFET with outstanding performance and reliability. It adopts advanced super-junction MOSFET technology, achieving a significant reduction in on-state resistance through specialized design while providing excellent switching performance. Additionally, it features high ruggedness, low gate charge, fast switching, and passes 100% avalanche testing. It is widely used in high-efficiency switched-mode power supplies, industrial control, power equipment, and other fields, offering excellent performance and reliability for various electronic applications.