Shindengen Launches MF2007SW High-side Nch-MOSFET Gate Driver IC with Reverse Connection and Reverse Current Protection
SHINDENGEN Electric Manufacturing Co., Ltd. has begun sales of the MF2007SW High-side Nch-MOSFET gate driver IC for reverse connection protection and reverse current protection applications.This product can be used as an ideal diode by being combined with an Nch-MOSFET to contribute to downsizing and reduced dissipation in vehicle device applications.
Can also be used as a bidirectional conduction semiconductor relay by being combined with 2 Nch-MOSFETs to achieve faster responsiveness and reduced size compared to conventional mechanical relays.
Overview
Power consumption has increased in automobiles in recent years due to more advanced electronic devices, functional integration, and greater multi-functionality. Conventionally, diodes have been used for reverse connection protection and reverse current protection elements in ECU input parts, however increased dissipation and heat generation from diodes resulting from increased current were impediments to equipment heat dissipation measures and downsizing.There has thus been a growing demand for "ideal diodes" which combine IC and MOSFET to provide rectification while also reducing power dissipation, controlling heat generation, and contributing to downsizing.
Shindengen has launched the MF2007SW High-side Nch-MOSFET gate driver IC in response to these needs. This product can be used as an ideal diode by being combined with an Nch-MOSFET to reduce power dissipation by approximately 72%, and inhibit temperature increases by approximately 51% compared to conventional diodes※1.
This contributes to downsizing and lower power dissipation in equipment which requires reverse connection and reverse current protection, such as automotive products, and output ORing applications.
It can also be used as a bidirectional conduction semiconductor relay※2 by being combined with 2 Nch-MOSFETs to contribute to faster response and downsizing by reducing response time to approximately 1/1000 and mounting area by approximately 96% compared to conventional mechanical relays.
※1 When combined with Shindengen's P24LF4QNK Nch-MOSFET
※2 When used as a semiconductor relay, connect the product's REV terminal (no. 7 terminal) to the GND.
Features
Reduced power dissipation
When used as an ideal diode※1, this can reduce power dissipation by approximately 72% compared to conventional diodes※3.
※1 When combined with Shindengen's P24LF4QNK Nch-MOSFET
※3 When using Shindengen's D30FDC4S SBD
Temperature increase control
When used as an ideal diode※1, this product can inhibit temperature increases by approximately 51% compared to conventional diodes※3.
※1 When combined with Shindengen's P24LF4QNK Nch-MOSFET
※3 When using Shindengen's D30FDC4S SBD
High speed response
When used as a semiconductor relay※2, the product has a fast operation time in response to ON/OFF signals, making it possible to reduce response times to approximately 1/20 for ON signals, and approximately 1/1000 for OFF signals compared to mechanical relays.
※2 When used as a semiconductor relay, connect the product's REV terminal (no. 7 terminal) to the GND
Reliable ON/OFF switching
The minute vibrations that can occur when switching between ON and OFF with mechanical relays, does not occur with semiconductor relays※4.
※4 Vibration can occur under some conditions.
Reduction in mounting area
When used as a semiconductor relay※2, this product can reduce mounting area by approximately 96% compared to conventional relays.
※2 When used as a semiconductor relay, connect the product's REV terminal (no. 7 terminal) to the GND.
Other features
VDS voltage difference of external Nch-MOSFET output as current
（Sink / source current supplied from IDET terminal）
AEC-Q100 compliance
Typical Applications
ADAS
Various vehicle installation ECU
CNC
Sequencer
Device inputs and outputs which require O-rings
Block Diagram
Product Specifications
Factory Location
Higashine Shindengen Co., Ltd. etc.
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本文由玄子转载自Shindengen News，原文标题为:Announcing the launch of an High-side Nch-MOSFET gate driver IC with reverse connection and reverse current protection，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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