1200V/140A SiC Power MOSFET S2M0016120K-1 with Very Low Total Conduction Losses and Very Stable Switching Characteristics Over Temperature Extremes
S2M0016120K-1 is a single SiC Power MOSFET packaged in a TO-247-4 case. The device is a high voltage n-channel enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S2M0016120K-1 is ideal for energy sensitive, high frequency applications in challenging environments.
Features
Positive temperature characteristics, easy to parallel
Low on-resistance Typ. RDS(on)=17mΩ
Fast switching speed and low switching losses
Very fast and robust intrinsic body diode
Process of non-bright Tin electroplatin
Applications
EV Fast Charging Modules
EV On Board Chargers
Solar Inverters
Online UPS/Industrial UPS
SMPS (Switch Mode Power Supplies)
DC-DC Converters
ESS (Energy Storage Systems)
Maximum Ratings(T=25℃ unless otherwise specified)
Electrical Characteristics(T=25℃ unless otherwise specified)
Reverse Diode Characteristics
Thermal-Mechanical Specifications
Ordering Information
- |
- +1 赞 0
- 收藏
- 评论 0
本文由Vicky转载自SMC，原文标题为:S2M0016120K-1 1200V SIC POWER MOSFET Data Sheet，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
相关推荐
Now available in TO-247 with 3 or 4 leads, the SiC MOSFET
Diotec Semiconductor offers new SiC MOSFETs in TO-247 with 3 or 4 Leads, highly suitable for EV charging systems for electric vehicles, solar inverters, and telecom power supplies.
1200V/21A N-Channel Enhancement Mode SiC Power MOSFET S2M0120120D with Very Low Total Conduction Losses and Very Stable Switching Characteristics
S2M0120120D is single SiC Power MOSFET packaged in TO-247AD case. The device is a high voltage n-channel enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S2M0120120D is ideal for energy sensitive, high frequency applications in challenging environments.
SMC’s 1200V SiC Power MOSFET S2M0025120K is Selected in Everything PE‘s Top MOSFETs in 2023
SMC Diode Solution’s 1200 V SiC Power MOSFET, S2M0025120K, has been selected as one of everything PE‘s top MOSFETs in 2023. S2M0025120K is designed for energy-sensitive, high-frequency applications in challenging environments.
SMC Releases S2M0025120K 1200V SiC MOSFET Optimized for Power Fast Switching Applications
SMC releases the S2M0025120K series which is the new generation 1200V voltage platform SiC MOSFETs family. The device is a high voltage n-channel enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes.
S1M1000170J 1200V SiC功率MOSFET数据表
S1M1000170J是一款1200V SiC功率MOSFET，采用TO-263-7封装。该器件为高压n沟道增强型MOSFET，具有非常低的导通损耗和非常稳定的开关特性。适用于能源敏感、高频应用，在恶劣环境中表现优异。
SMC - SIC POWER MOSFET,SINGLE SIC POWER MOSFET,单SIC功率MOSFET,SIC功率场效应晶体管,S1M1000170J,INDUSTRIAL UPS,DC-DC CONVERTERS,ENERGY STORAGE SYSTEMS,工业不间断电源,EV FAST CHARGING MODULES,ESS,储能系统,开关模式电源,电动汽车快速充电模块,在线式UPS,SWITCH MODE POWER SUPPLIES,EV ON BOARD CHARGERS,SOLAR INVERTERS,ONLINE UPS,电动汽车车载充电器,太阳能逆变器,SMPS,DC-DC转换器,模式电源开关,字母S
S1M1000170D 1700V碳化硅功率MOSFET
S1M1000170D是一款1700V硅碳化物功率MOSFET，采用TO-247-3封装。该器件为高压n沟道增强型MOSFET，具有非常低的导通损耗和稳定的开关特性。适用于能源敏感、高频应用的挑战性环境中。
SMC - 碳化硅功率场效应晶体管,SINGLE SIC POWER MOSFET,高压N沟道增强型MOSFET,单SIC功率MOSFET,SILICON CARBIDE POWER MOSFET,HIGH VOLTAGE NCHANNEL ENHANCEMENT MODE MOSFET,S1M1000170D,INDUSTRIAL UPS,DC-DC CONVERTERS,ENERGY STORAGE SYSTEMS,工业不间断电源,EV FAST CHARGING MODULES,ESS,储能系统,开关模式电源,电动汽车快速充电模块,在线式UPS,SWITCH MODE POWER SUPPLIES,SOLAR INVERTERS,EV ON-BOARD CHARGERS,ONLINE UPS,电动汽车车载充电器,太阳能逆变器,SMPS,DC-DC转换器,模式电源开关,字母S
HC3M0015065K SiC功率MOSFET N沟道增强模式
该资料介绍了华为阳电子有限公司生产的HC3M0015065K型号碳化硅（SiC）功率MOSFET器件。该器件采用第三代SiC MOSFET技术，具有高阻断电压、低导通电阻、高速开关特性以及快速恢复二极管等特点。适用于电动汽车充电器、太阳能逆变器、不间断电源（UPS）、开关电源（SMPS）和直流/直流转换器等领域。
华轩阳电子 - SIC POWER MOSFET,SIC功率场效应晶体管,HC3M0015065K,EV CHARGERS,SOLAR INVERTERS,开关模式电源,不间断电源,电动汽车充电器,UPS,太阳能逆变器,SMPS,DC/DC CONVERTERS,DC/DC转换器
S3M0025120T 1200V SiC功率MOSFET数据表
S3M0025120T是一款1200V SiC功率MOSFET，采用TOLL封装。该器件具有非常低的导通损耗和非常稳定的开关特性，适用于能源敏感、高频应用，特别是在恶劣环境中。
SMC - SIC POWER MOSFET,SINGLE SIC POWER MOSFET,单SIC功率MOSFET,SIC功率场效应晶体管,S3M0025120T,INDUSTRIAL UPS,DC-DC CONVERTERS,ENERGY STORAGE SYSTEMS,工业不间断电源,EV FAST CHARGING MODULES,ESS,储能系统,开关模式电源,电动汽车快速充电模块,在线式UPS,SWITCH MODE POWER SUPPLIES,EV ON BOARD CHARGERS,SOLAR INVERTERS,ONLINE UPS,电动汽车车载充电器,太阳能逆变器,SMPS,DC-DC转换器,模式电源开关,字母S
S1M1000170K 1700V碳化硅功率MOSFET
本资料为S1M1000170K硅碳化物功率MOSFET的技术数据手册。该器件是一款高压n沟道增强型MOSFET，具有非常低的导通损耗和稳定的开关特性。适用于能源敏感、高频应用的挑战性环境中。
SMC - 碳化硅功率场效应晶体管,HIGH VOLTAGE N- CHANNEL ENHANCEMENT MODE MOSFET,SINGLE SIC POWER MOSFET,高压N沟道增强型MOSFET,单SIC功率MOSFET,SILICON CARBIDE POWER MOSFET,S1M1000170K,INDUSTRIAL UPS,DC-DC CONVERTERS,ENERGY STORAGE SYSTEMS,工业不间断电源,EV FAST CHARGING MODULES,ESS,储能系统,开关模式电源,电动汽车快速充电模块,在线式UPS,SWITCH MODE POWER SUPPLIES,SOLAR INVERTERS,EV ON-BOARD CHARGERS,ONLINE UPS,电动汽车车载充电器,太阳能逆变器,SMPS,DC-DC转换器,模式电源开关,字母S
S2M0025120K 1200V SiC功率MOSFET
本资料为S2M0025120K型1200V碳化硅(SiC)功率MOSFET的技术数据手册。该器件采用TO-247-4封装，是一款高电压N沟道增强型MOSFET，具有非常低的导通损耗和稳定的开关特性。适用于能源敏感、高频应用的挑战性环境。
SMC - SIC POWER MOSFET,HIGH VOLTAGE N-CHANNEL ENHANCEMENT MODE MOSFET,SINGLE SIC POWER MOSFET,高压N沟道增强型MOSFET,单SIC功率MOSFET,SIC功率场效应晶体管,S2M0025120K,INDUSTRIAL UPS,DC-DC CONVERTERS,ENERGY STORAGE SYSTEMS,工业不间断电源,EV FAST CHARGING MODULES,ESS,储能系统,开关模式电源,电动汽车快速充电模块,在线式UPS,SWITCH MODE POWER SUPPLIES,EV ON BOARD CHARGERS,SOLAR INVERTERS,ONLINE UPS,电动汽车车载充电器,太阳能逆变器,SMPS,DC-DC转换器,模式电源开关,字母S
S3M0040120T 1200V SiC功率MOSFET数据表
S3M0040120T是一款1200V SiC功率MOSFET，采用TOLL封装。该器件具有低导通损耗和稳定的开关特性，适用于能源敏感、高频应用。
SMC - SIC POWER MOSFET,SINGLE SIC POWER MOSFET,单SIC功率MOSFET,SIC功率场效应晶体管,S3M0040120T,INDUSTRIAL UPS,DC-DC CONVERTERS,ENERGY STORAGE SYSTEMS,工业不间断电源,EV FAST CHARGING MODULES,ESS,储能系统,开关模式电源,电动汽车快速充电模块,在线式UPS,SWITCH MODE POWER SUPPLIES,EV ON BOARD CHARGERS,SOLAR INVERTERS,ONLINE UPS,电动汽车车载充电器,太阳能逆变器,SMPS,DC-DC转换器,模式电源开关,字母S
S3M0016120K 1200V SiC功率MOSFET数据表
S3M0016120K是一款1200V SiC功率MOSFET，采用TO-247-4封装。该器件具有非常低的导通损耗和稳定的开关特性，适用于能源敏感、高频应用。
SMC - SIC POWER MOSFET,SINGLE SIC POWER MOSFET,单SIC功率MOSFET,SIC功率场效应晶体管,S3M0016120K,INDUSTRIAL UPS,DC-DC CONVERTERS,ENERGY STORAGE SYSTEMS,工业不间断电源,EV FAST CHARGING MODULES,ESS,储能系统,开关模式电源,电动汽车快速充电模块,在线式UPS,SWITCH MODE POWER SUPPLIES,EV ON BOARD CHARGERS,SOLAR INVERTERS,ONLINE UPS,电动汽车车载充电器,太阳能逆变器,SMPS,DC-DC转换器,模式电源开关,字母S
S2M0040120J-1 1200V SiC功率MOSFET
本资料为S2M0040120J-1型SiC功率MOSFET的技术数据手册。该器件是一款高压n沟道增强型MOSFET，具有非常低的导通损耗和稳定的开关特性。适用于能源敏感、高频应用的挑战性环境。
SMC - SIC POWER MOSFET,HIGH VOLTAGE N-CHANNEL ENHANCEMENT MODE MOSFET,SINGLE SIC POWER MOSFET,高压N沟道增强型MOSFET,单SIC功率MOSFET,SIC功率场效应晶体管,S2M0040120J-1,INDUSTRIAL UPS,DC-DC CONVERTERS,ENERGY STORAGE SYSTEMS,工业不间断电源,EV FAST CHARGING MODULES,ESS,储能系统,开关模式电源,电动汽车快速充电模块,在线式UPS,SWITCH MODE POWER SUPPLIES,EV ON BOARD CHARGERS,SOLAR INVERTERS,ONLINE UPS,电动汽车车载充电器,太阳能逆变器,SMPS,DC-DC转换器,模式电源开关,字母S
S2M0040120F 1200V SiC功率MOSFET
S2M0040120F是一款1200V SiC功率MOSFET，采用TO-247-4全壳封装。该器件为高电压n沟道增强型MOSFET，具有非常低的导通损耗和非常稳定的开关特性。适用于能源敏感、高频应用，在恶劣环境中表现优异。
SMC - SIC POWER MOSFET,HIGH VOLTAGE N- CHANNEL ENHANCEMENT MODE MOSFET,SINGLE SIC POWER MOSFET,高压N沟道增强型MOSFET,单SIC功率MOSFET,SIC功率场效应晶体管,S2M0040120F,INDUSTRIAL UPS,工业不间断电源,EV FAST CHARGING MODULES,开关模式电源,电动汽车快速充电模块,在线式UPS,SWITCH MODE POWER SUPPLIES,EV ON BOARD CHARGERS,SOLAR INVERTERS,ONLINE UPS,电动汽车车载充电器,太阳能逆变器,SMPS,模式电源开关
S2M0040120K 1200V SiC功率MOSFET
S2M0040120K是一款1200V SiC功率MOSFET，采用TO-247-4封装。该器件具有低总导通损耗和稳定的开关特性，适用于能源敏感、高频应用，特别适合于具有挑战性的环境。
SMC - SIC POWER MOSFET,SINGLE SIC POWER MOSFET,高压N沟道增强型MOSFET,单SIC功率MOSFET,HIGH VOLTAGE N-CHANNEL ENHANCEMENT MODE MOSFET,SIC功率场效应晶体管,S2M0040120K,INDUSTRIAL UPS,DC-DC CONVERTERS,ENERGY STORAGE SYSTEMS,工业不间断电源,EV FAST CHARGING MODULES,ESS,储能系统,开关模式电源,电动汽车快速充电模块,在线式UPS,SWITCH MODE POWER SUPPLIES,EV ON BOARD CHARGERS,SOLAR INVERTERS,ONLINE UPS,电动汽车车载充电器,太阳能逆变器,SMPS,DC-DC转换器,模式电源开关,字母S
电子商城
现货市场
服务
定制液冷板尺寸5mm*5mm~3m*1.8m，厚度2mm-100mm，单相液冷板散热能力最高300W/cm²。
最小起订量： 1片 提交需求>
授权代理品牌：集成电路
授权代理品牌：分立元件
授权代理品牌：接插件及结构件
授权代理品牌：部件、组件及配件
授权代理品牌：电源及模块
授权代理品牌：电子材料
授权代理品牌：仪器仪表及测试配组件
授权代理品牌：电工工具及材料
授权代理品牌：机械电子元件
授权代理品牌：加工与定制
我要提问
登录 | 立即注册
提交评论