60V/30A N-channel MOSFET SL30N06D with Low On-state Resistance and Low Threshold Voltage Makes It An Ideal Choice for Automotive Electronic Systems
With the rapid development of the automotive industry, the demand for automotive electronic systems continues to increase. Intelligent driving, electrification, and high energy efficiency have become the development trends in the automotive sector. In this context, the MOSFET SL30N06D, as a key component, undergoes continuous technological innovation and optimization to meet the requirements of automotive electronic systems. Moreover, its excellent characteristics and stability provide important support for high energy efficiency and intelligentization of automotive electronic systems.
Medium Voltage MOSFET SL30N06D product photo
The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250μA). These features make it an ideal choice for automotive electronic systems. With the continuous advancement of automotive electronic technology, the potential of the SL30N06D will be further explored and utilized.
SLKOR Medium Voltage MOSFET SL30N06D
Firstly, the SL30N06D features a drain-to-source voltage (Vdss) of up to 60V, allowing it to withstand high voltage environments in automotive circuits, ensuring system stability and reliability. Additionally, it possesses a continuous drain current (Id) capability of 30A, enabling stable operation under high-load conditions and meeting the demand for high-power output in automotive electronic systems. Furthermore, the SL30N06D exhibits low on-state resistance (RDS(on)), which helps reduce power consumption and temperature rise, thereby improving system efficiency. Moreover, this device has a low gate threshold voltage (Vgs(th)), facilitating fast switching response and precise control, enhancing system performance.
Parameters of Slkor Medium Voltage MOSFET SL30N06D
It is suitable for various automotive electronic systems, such as electric drive systems, lighting systems, and power supply systems. In electric drive systems, the SL30N06D can effectively control the operation of the motor, improving the energy conversion efficiency of electric vehicles. In lighting systems, its high drain-to-source voltage and low on-state resistance ensure stable brightness and long life of the lamps. In power supply systems, the characteristics of this device make it suitable for DC-DC converters and power management modules, ensuring the stability and efficiency of the power supply system.
In conclusion, the SL30N06D, as an excellent medium-voltage MOSFET, has demonstrated outstanding performance and broad application prospects in the automotive analog field, making it an essential component in the design of automotive electronic systems. As the automotive industry advances towards intelligence and electrification, the demand for power semiconductor devices is increasing. With its technological innovation, high performance, and reliability, Slkor products have a wide range of applications and a good brand reputation in the automotive analog market, establishing itself as one of the leaders in the power semiconductor field. The company will continue to drive technological innovation, making MOSFETs shine as a star in the design of automotive electronic systems, injecting new vitality and energy into the industry's development.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由Vicky转载自SLKOR News,原文标题为:【Daily Highlight】The Medium Voltage MOSFET SL30N06D,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关研发服务和供应服务
相关推荐
The 200V/19A N-channel MOSFET IRF640, An Ideal Switching Component In the Motor Drive Systems of New Energy Vehicles
The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250μA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new energy vehicles, especially in situations requiring high efficiency and precise control. It is suitable for various medium-voltage switching and power control applications.
SLKOR Semiconductor Medium Voltage MOSFET SL68N08G, an Ideal Choice for High-performance Motor Drivers
The SL68N08G medium-voltage MOSFET from SLKOR Semiconductor is an important innovation achievement of ours. The SL68N08G is an N-channel MOSFET with a drain-source voltage of 80V, a continuous drain current of 68A, and an on-resistance of 6.4mΩ. This product features an advanced trench structure design, which ensures reliability and durability. This design not only improves the device‘s heat dissipation capability but also enhances the overall circuit efficiency. Additionally, this product is compliant with ROHS standards and is halogen-free.
The Medium Voltage MOSFET MMBF170L with a Appropriate Drain-source Voltage (60V), Continuous Drain Current (300mA)
MMBF170L is an N-channel MOSFET known for its excellent product characteristics, including appropriate drain-source voltage (60V), continuous drain current (300mA), low on-state resistance (3Ω@10V, 500mA), and a lower threshold voltage (2.5V@ 250μA), making it an ideal choice for applications in power management, electric motor control, charging stations, and auxiliary electronic device control.
The 100V/65A N-channel MOSFET SL60N10Q with Extremely Low On-resistance, Which Significantly Enhances Power Management Systems
The Slkor SL60N10Q is an N-channel MOSFET boasting a 100V drain-source voltage and a continuous drain current of 65A. Renowned for its extremely low on-resistance (8mΩ@10V, 20A) and relatively lower threshold voltage (2.4V@250μA), this MOSFET excels in various applications. In AI power management systems, the Medium Voltage MOSFET SL65N10Q facilitates efficient management and control of power sources, ensuring stable power supply and maximizing energy utilization.
The 60V/340mA MOSFET 2N7002KW Achieves Efficient Power Control and Precise System Operation
The 2N7002KW is an N-channel MOSFET suitable for various low-power, high-efficiency circuit designs. It features a high drain-source voltage (60V) and continuous drain current (340mA), capable of withstanding certain voltage and current loads. Additionally, its low on-state resistance (1.1Ω@4.5V, 200mA) and low threshold voltage (1.3V@250μA) ensure reduced power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing reliable power control and high-performance efficiency for circuit design.
SLKOR Semiconductor Low Voltage MOSFET SL318N04M with a Vdss of 40V and a Id of 318A
The SL318N04M is an N-channel MOSFET with a drain-source voltage (Vdss) of 40V, a continuous drain current (Id) of 318A, an on-resistance (RDS(on)@Vgs, Id) of 0.7mΩ@10V, 20A, a threshold voltage (Vgs(th)@Id) of 1.7V@250μA. It is packaged in LFPAK (5x6) and complies with the RoHS standard, being halogen-free. The distinguishing feature of the SL318N04M lies in its fast switching speed, as well as its reliable and robust performance.
High-performance MOSFETs Drive Innovation in the Field of Electronic Applications - SLKOR Semiconductor SL1002B
SL1002B is a high-cell-density trench N-channel MOSFET that provides excellent RDSON and efficiency for most small power switching and load switching applications.
The 60V/60A N-channel MOSFET SL60N06 with Superior High-frequency Characteristics, Enabling Rapid Switching and Precise Control Within the Microwave Frequency Range
Slkor SL60N06is an N-channel MOSFET with a 60V drain-source voltage and a continuous drain current of 60A. It is renowned for its low on-resistance (11.5mΩ@10V,30A) and relatively low threshold voltage (4V@250μA). With the rapid advancement of microwave technology, the application of high-frequency circuits in fields such as radar, communication, and satellite navigation is becoming increasingly widespread. These attributes have garnered significant attention for the SL60N06 as a key component in high-frequency circuits, thanks to its excellent performance and reliability.
电子商城
现货市场
服务
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
登录 | 立即注册
提交评论